Investigation of the effect of anodization time and annealing temperature on the physical properties of ZrO2thin film on a Si substrate

2017 ◽  
Vol 4 (8) ◽  
pp. 086414 ◽  
Author(s):  
Kian Heng Goh ◽  
Hui Jing Lee ◽  
Sze Kuan Lau ◽  
Pei Chiew Teh ◽  
S Ramesh ◽  
...  
Keyword(s):  
Physical Properties ◽  
Annealing Temperature ◽  
Si Substrate ◽  
Anodization Time

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Thermal Annealing of Amorphous CoMnNiO Film on Oxidized Si Substrate

1989 ◽  
Vol 164 ◽  
Author(s):  
Tan Hui ◽  
Qin Dong ◽  
Tao Mingde ◽  
Lin Chenglu ◽  
Zou Shichang
Keyword(s):  
Solid Solution ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Amorphous Film ◽  
Spinel Solid Solution ◽  
Si Substrate ◽  
Structure Relaxation ◽  
Spinel Solid Solutions

AbstractAmorphous CoMnNiO film is doposited on oxidized Si substrate by RF sputtering equipment. Structure relaxation occurs in the amorphous CoMnNiO film when it is annealed below 550°C. Annealed in the range from 600°C to 1000°C, the amorphous film is converted into the polycrystal. After annealing in rich oxygen atmosphere, the amorphous film is transformed into spinel solid solution with stable structure and good electrical properties. The electrical conductivity will be reduced due to formation of low valence oxides when annealed without oxygen. As annealing temperature is higher than 1000°C, some spinel solid solutions will be resolved into low valence oxides CoO and NiO, reducing the conductivity of the CoMnNiO film.

Physical Properties of Annealed a-CSiGe:H Alloys

1989 ◽  
Vol 149 ◽  
Author(s):  
F. Demichelis ◽  
G. Kaniadakis ◽  
C. F. Pirri ◽  
A. Tagliaferro ◽  
E. Tresso
Keyword(s):  
Hydrogen Bonding ◽  
Physical Properties ◽  
Annealing Temperature ◽  
Optoelectronic Properties

ABSTRACTThe optoelectronic properties of the new semiconducting alloy a-CSiGe:H have been studied with particular regard to the dependence upon deposition and annealing temperature. Infrared and electrical results are interpreted in terms of hydrogen bonding.

scholarly journals The effect of heat treatment on the morphology and mobility of Au nanoparticles

2020 ◽  
Vol 11 ◽  
pp. 61-67
Author(s):  
Sven Oras ◽  
Sergei Vlassov ◽  
Simon Vigonski ◽  
Boris Polyakov ◽  
Mikk Antsov ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Au Nanoparticles ◽  
Annealing Temperature ◽  
Kinetic Monte Carlo ◽  
Si Substrate ◽  
Au Nps ◽  
Silica Substrate ◽  
Atomic Force ◽  
Kinetic Monte Carlo Simulations ◽  
Higher Temperature

In the present paper, we investigate the effect of heat treatment on the geometry and mobility of Au nanoparticles (NPs) on a Si substrate. Chemically synthesized Au NPs of diameter ranging from 5 to 27 nm were annealed at 200, 400, 600 and 800 °C for 1 h. A change in the geometry from faceted to more rounded shapes were observed with increasing annealing temperature. Kinetic Monte Carlo simulations indicate that the NPs become rounded due to the minimization of the surface area and the transition to lower energy surface types {111} and {100}. The NPs were manipulated on a silica substrate with an atomic force microscope (AFM) in tapping mode. Initially, the NPs were immovable by AFM energy dissipation. However, annealed NPs became movable, and less energy was required to displace the NPs annealed at higher temperature. However, after annealing at 800 °C, the particles became immovable again. This effect was attributed to the diffusion of Au into the Si substrate and to the growth of the SiO2 layer.

Effect of Ag2O Doping on Some Physical Properties Y145 Superconductor

2016 ◽  
Vol 851 ◽  
pp. 57-60 ◽  
Author(s):  
Theerathawan Panklang ◽  
Rattanasuda Supadanaison ◽  
Chalit Wanichayanan ◽  
Adullawich Kaewkao ◽  
Tunyanop Nilkamjon ◽  
...  
Keyword(s):  
Critical Temperature ◽  
Solid State ◽  
Physical Properties ◽  
Porous Structure ◽  
Solid State Reaction ◽  
Annealing Temperature ◽  
Sintering Temperature

In this paper, the Y145 superconductor doped Ag2O were synthesized by solid state reaction. The calcinations and sintering temperature were at 920 °C and annealing temperature was at 550 °C. The highest critical temperature was in Y145+0.1Ag sample with Tc onset at 96 K and the lowest was found in pure Y145 at 95 K. We found that the surface of Y145 superconductor was improved by Ag adding on the porous structure.

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