Improved Bipolar Resistive Switching Memory Using W/TaOx/W Structure
2010 ◽
Vol 159
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pp. 333-337
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Keyword(s):
Resistive switching memory characteristics of high- TaOx film in a W/TaOx/W structure have been investigated and compared with Al/TaOx/W structure. Amorphous TaOx film with a thickness of 6.8 nm was confirmed by HRTEM image and EDX analysis. The switching in Al/TaOx/W structure is found to be unstable with large variations in set and reset voltages. The memory device in W/TaOx/W structure shows good memory characteristics with a low power of ~500µAx1.6V. The current conduction mechanism is fitted to Ohmic and SCLC in LRS and HRS, respectively. The memory device has shown good endurance characteristics of >5x103 cycles and good data retention with a stable HRS/LRS.
2018 ◽
Vol 215
(24)
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pp. 1800550
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2014 ◽
Vol 14
(12)
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pp. 9498-9503
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Keyword(s):
2017 ◽
Vol 5
(37)
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pp. 9799-9805
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Keyword(s):
Keyword(s):