Characterization of magnetic Czochralski silicon devices with aluminium oxide field insulator: effect of oxygen precursor on electrical properties and radiation hardness

2021 ◽  
Vol 16 (05) ◽  
pp. P05011
Author(s):  
J. Ott ◽  
S. Bharthuar ◽  
A. Gädda ◽  
T. Arsenovich ◽  
M. Bezak ◽  
...  
1990 ◽  
Vol 55 (12) ◽  
pp. 2933-2939 ◽  
Author(s):  
Hans-Hartmut Schwarz ◽  
Vlastimil Kůdela ◽  
Klaus Richau

Ultrafiltration cellulose acetate membrane can be transformed by annealing into reverse osmosis membranes (RO type). Annealing brings about changes in structural properties of the membranes, accompanied by changes in their permeability behaviour and electrical properties. Correlations between structure parameters and electrochemical properties are shown for the temperature range 20-90 °C. Relations have been derived which explain the role played by the dc electrical conductivity in the characterization of rejection ability of the membranes in the reverse osmosis, i.e. rRO = (1 + exp (A-B))-1, where exp A and exp B are statistically significant correlation functions of electrical conductivity and salt permeation, or of electrical conductivity and water flux through the membrane, respectively.


2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.


PLoS ONE ◽  
2013 ◽  
Vol 8 (4) ◽  
pp. e61639 ◽  
Author(s):  
Congo Tak-Shing Ching ◽  
Yueh-Chi Chen ◽  
Li-Hua Lu ◽  
Peiyuan F. Hsieh ◽  
Chin-Sung Hsiao ◽  
...  

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