scholarly journals Wettability and Interface Reaction of Sn-Cr powder alloy on Poly-crystalline Diamond (PCD)

Author(s):  
Jinchang Chen ◽  
Dekui Mu ◽  
Xinjiang Liao ◽  
Hui Huang ◽  
Xipeng Xu
Author(s):  
R.M. Bogomolov ◽  
◽  
D.Yu. Serikov ◽  
A.M. Grinev ◽  
N.I. Dedov ◽  
...  

Alloy Digest ◽  
2009 ◽  
Vol 58 (12) ◽  

Abstract Ancorsteel 30 HP is a prealloyed low-alloy steel powder alloy with moderate hardenability. This datasheet provides information on composition, physical properties, hardness, and tensile properties. It also includes information on heat treating and powder metal forms. Filing Code: CS-151. Producer or source: Hoeganaes Corporation.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Wei Guo ◽  
Wanying Zhang ◽  
Yubing Si ◽  
Donghai Wang ◽  
Yongzhu Fu ◽  
...  

AbstractThe interfacial instability of the lithium-metal anode and shuttling of lithium polysulfides in lithium-sulfur (Li-S) batteries hinder the commercial application. Herein, we report a bifunctional electrolyte additive, i.e., 1,3,5-benzenetrithiol (BTT), which is used to construct solid-electrolyte interfaces (SEIs) on both electrodes from in situ organothiol transformation. BTT reacts with lithium metal to form lithium 1,3,5-benzenetrithiolate depositing on the anode surface, enabling reversible lithium deposition/stripping. BTT also reacts with sulfur to form an oligomer/polymer SEI covering the cathode surface, reducing the dissolution and shuttling of lithium polysulfides. The Li–S cell with BTT delivers a specific discharge capacity of 1,239 mAh g−1 (based on sulfur), and high cycling stability of over 300 cycles at 1C rate. A Li–S pouch cell with BTT is also evaluated to prove the concept. This study constructs an ingenious interface reaction based on bond chemistry, aiming to solve the inherent problems of Li–S batteries.


ACS Omega ◽  
2021 ◽  
Author(s):  
Md Akhtarul Islam ◽  
Myisha Ahmed Chowdhury ◽  
Md. Salatul Islam Mozumder ◽  
Md. Tamez Uddin

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 727
Author(s):  
Bofang Zhou ◽  
Taohua Li ◽  
Hongxia Zhang ◽  
Junliang Hou

The interface behavior of brazing between Zr-Cu filler metal and SiC ceramic was investigated. Based on the brazing experiment, the formation of brazing interface products was analyzed using OM, SEM, XRD and other methods. The stable chemical potential phase diagram was established to analyze the possible diffusion path of interface elements, and then the growth behavior of the interface reaction layer was studied by establishing relevant models. The results show that the interface reaction between the active element Zr and SiC ceramic is the main reason in the brazing process the interface products are mainly ZrC and Zr2Si and the possible diffusion path of elements in the product formation process is explained. The kinetic equation of interfacial reaction layer growth is established, and the diffusion constant (2.1479 μm·s1/2) and activation energy (42.65 kJ·mol−1) are obtained. The growth kinetics equation of interfacial reaction layer thickness with holding time at different brazing temperatures is obtained.


1989 ◽  
Vol 66 (9) ◽  
pp. 4441-4443 ◽  
Author(s):  
Robert H. Doremus
Keyword(s):  

2001 ◽  
Vol 696 ◽  
Author(s):  
R. Würz ◽  
W. Bohne ◽  
W. Fuhs ◽  
J. Röhrich ◽  
M. Schmidt ◽  
...  

AbstractCaF2 films with thicknesses in the monolayer range (<20 Å) were grown on Si(111) by evaporation from a CaF2 source at UHV conditions. They were characterized ex-situ by Heavy-Ion Elastic Recoil Detection Analysis (HI-ERDA), RBS/Channeling, X-ray Photoelectron Spectroscopy (XPS) and Atomic Force Microscopy (AFM). The F/Ca ratio of the films was found to depend on the growth temperature Ts and to deviate appreciably from the stoichiometric composition (F/Ca=2). Due to an interface reaction which leads to a CaF-interface layer a change from polycrystalline to epitaxial growth occurs at Ts=450°C. At higher temperature film growth started with a closed layer of CaF on top of which CaF2 layers with an increasing fraction of pinholes were formed. By means of a two-step process at different temperatures, the amount of pinholes could be strongly reduced. It was found, that buffer layers of CaF2 with a CaF interface layer introduced in Au/p-Si contacts enhance the barrier height by as much as 0.36eV to values of 0.64eV.


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