High-conductivity silicon based spectrally selective plasmonic surfaces for sensing in the infrared region

Aluminum-Silicon based die-casting alloys have been extensively utilized in various industrial applications, but their relatively low electrical and thermal conductivities make them unsuitable as high conductivity parts. In this research, silicon content was restricted to a comparatively low level for higher conductivity and magnesium was added to enhance the castabilities. Al-1Fe-0.5Si-xMg alloys showed significantly higher electrical conductivity than conventional Al-Si based alloys. As the Mg content was increased, the mold filling ability measured using a fluidity serpentine test mold was a little decreased, however the hot cracking susceptibility was observed to be first increased and then decreased. The relationship between solidification characteristics and castabilities of Al-1Fe-0.5Si-xMg alloys was discussed based on the cooling curve analysis and microstructural characterization results.

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Optical Transport Properties of Graphene Surface Plasmon Polaritons in Mid-Infrared Band

Crystals ◽

10.3390/cryst9070354 ◽

2019 ◽

Vol 9 (7) ◽

pp. 354 ◽

Cited By ~ 9

Author(s):

Yindi Wang ◽

Hongxia Liu ◽

Shulong Wang ◽

Ming Cai ◽

Lan Ma

Keyword(s):

Surface Plasmon ◽

Surface Plasmon Polaritons ◽

Infrared Region ◽

Transmission Characteristics ◽

Infrared Band ◽

Theoretical Derivation ◽

Mid Infrared ◽

Graphene Surface ◽

Silicon Based ◽

Plasmon Polaritons

The excellent transmission characteristics of graphene surface plasmon polaritons in mid-infrared band were analyzed and verified effectively through theoretical derivation and soft simulation in this paper. Meanwhile, a sandwich waveguide structure of dielectric–graphene–substrate–dielectric based on graphene surface plasmon polaritons (SPPs) was presented. Simulation results indicate that graphene SPPs show unique properties in the mid-infrared region including ultra-compact mode confinement and dynamic tunability, which allow these SPPs to overcome the defects of metal SPPs and traditional silicon-based optoelectronic devices. Thus, they can be used to manufacture subwavelength devices. The work in this paper lays a theoretical foundation for the application of graphene SPPs in the mid-infrared region.

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Synthesis of Silicon Based Opal by Chemical Reduction of Silica Opal

MRS Proceedings ◽

10.1557/proc-0964-r03-12 ◽

2006 ◽

Vol 964 ◽

Author(s):

Ali E. Aliev ◽

M. A. O. Royer ◽

A. A. Zakhidov ◽

R. H. Baughman

Keyword(s):

Photonic Crystal ◽

Elemental Analysis ◽

Chemical Reduction ◽

Contrast Ratio ◽

Infrared Region ◽

Gas Mixture ◽

Sem Images ◽

Long Wavelength ◽

Dielectric Contrast ◽

Silicon Based

ABSTRACTBy reduction of SiO2 opal in atmosphere of nitrogen (80%)-helium (15%)-hydrogen (5%) gas mixture at various temperatures we tuned the dielectric contrast ratio and band gap of photonic crystal (PC) up to 10 %. The SEM images dose not show any detectible change in lattice parameters, whereas the elemental analysis shows remarkable decrease of oxygen content. The shift of reflectance spectra toward the long wavelength and increase of transmission in infrared region confirm the redaction of silica and partial transformation to the silicon.

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Narrowband spectrally selective near-infrared photodetector based on up-conversion nanoparticles used in a 2D hybrid device

Journal of Materials Chemistry C ◽

10.1039/c6tc05113h ◽

2017 ◽

Vol 5 (7) ◽

pp. 1591-1595 ◽

Cited By ~ 33

Author(s):

Nan Zhou ◽

Bing Xu ◽

Lin Gan ◽

Junpei Zhang ◽

Junbo Han ◽

...

Keyword(s):

Near Infrared ◽

Infrared Region ◽

Infrared Photodetector ◽

Device Structure ◽

Spectral Window ◽

Hybrid Device ◽

Spectrally Selective ◽

Near Infrared Region

A hybrid (NaYF4:Yb/Er@NaYF4:Nd/Yb)/MoS2 device structure is proposed to realize narrow spectral window photodetection in the near-infrared region.

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Silicon Microchannel Array as a Basis of Biosensor Device

MRS Proceedings ◽

10.1557/proc-0915-r03-06 ◽

2006 ◽

Vol 915 ◽

Author(s):

Alexander Lomzov ◽

Natalia Vandysheva ◽

Alexander Bublikov ◽

Dmitry Pyshnyi ◽

Sergei Romanov

Keyword(s):

Dna Hybridization ◽

Direct Analysis ◽

Infrared Region ◽

Uv Spectra ◽

Optical Methods ◽

Standard Glass ◽

Microchannel Array ◽

Glass Slides ◽

3D Solid ◽

Silicon Based

AbstractThis work shows the possibilities of using the silicon-based microchannel array (Si-MCA) as a 3D-solid support of DNA probes and studying of application of optical methods for DNA hybridization direct analysis. It was obtained that amount of immobilized oligodeoxyribonucleotides on the Si-MCA surface is enhanced with lighting of Si-MCA microchannel. The sample of 160 μm thickness succeeded in immobilizing oligonucleotides 40 times as much as the standard glass slides having the same external surface. The application of Si-MCA as a carrier of DNA allows doing direct analysis of nucleic acids in infrared region by the FTIR method that essentially simplifies creation of a biosensor based on the Si-MCA. It is indicated that using of the Si-MCA as a diffraction grating in visible and UV spectra allows simplifying the spectral analysis of biochemical reaction. It was success confidently to distinguish the mediums differing on the refractive index by dn=0.006.

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High Conductivity Gate Metallurgy for Tft/Lcd's

MRS Proceedings ◽

10.1557/proc-507-37 ◽

1998 ◽

Vol 507 ◽

Author(s):

Peter M. Fryer ◽

E. Colgan ◽

E. Galligan ◽

W. Graham ◽

R. Horton ◽

...

Keyword(s):

High Resolution ◽

Thin Film Transistor ◽

Liquid Crystal Displays ◽

High Conductivity ◽

Flat Panel Displays ◽

Aperture Ratio ◽

Notebook Computers ◽

Silicon Based ◽

Processing Steps ◽

Poor Adhesion

ABSTRACTAmorphous silicon based thin film transistor liquid crystal displays (TFT/LCD) have become the dominant technology used for flat panel displays for notebook computers. The need for higher resolution, larger diagonal displays for both notebook and desktop applications is discussed. Calculations have shown that the use of high conductivity gate metal such as aluminum or copper, together with the implementation of improved groundrules, can significantly extend today's technology. Aluminum suffers from problems with hillock formation during PECVD processing, and copper typically has poor adhesion to glass, reaction problems with silicon and other PECVD films, and difficulties in contacting it to other metals. Approaches to solving problems with both materials are presented, and a novel reduced mask process to fabricate high resolution, high aperture ratio 10.5” SXGA (1280×1024) displays is described. The process uses copper gate metallurgy with redundancy, without the need for extra processing steps. The resulting displays have 150 dpi color resolution, an aperture ratio of over 35%, and excellent image quality, making them the first high resolution displays that are suitable for notebook applications.

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Design and fabrication of silicon-based linear polarizer with multilayer nanogratings operating in infrared region

Optical Engineering ◽

10.1117/1.oe.56.1.017111 ◽

2017 ◽

Vol 56 (1) ◽

pp. 017111 ◽

Cited By ~ 4

Author(s):

Yu Lin ◽

Jingpei Hu ◽

Bing Cao ◽

Miao Wang ◽

Chinhua Wang

Keyword(s):

Infrared Region ◽

Silicon Based ◽

Linear Polarizer

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High Conductivity Gate Metallurgy for TFT/LCD's

MRS Proceedings ◽

10.1557/proc-508-37 ◽

1998 ◽

Vol 508 ◽

Cited By ~ 2

Author(s):

Peter M. Fryer ◽

E. Colgan ◽

E. Galligan ◽

W. Graham ◽

R. Horton ◽

...

Keyword(s):

High Resolution ◽

Thin Film Transistor ◽

Liquid Crystal Displays ◽

High Conductivity ◽

Flat Panel Displays ◽

Aperture Ratio ◽

Notebook Computers ◽

Silicon Based ◽

Processing Steps ◽

Poor Adhesion

AbstractAmorphous silicon based thin film transistor liquid crystal displays (TFT/LCD) have become the dominant technology used for flat panel displays for notebook computers. The need for higher resolution, larger diagonal displays for both notebook and desktop applications is discussed. Calculations have shown that the use of high conductivity gate metal such as aluminum or copper, together with the implementation of improved groundrules, can significantly extend today's technology. Aluminum suffers from problems with hillock formation during PECVD processing, and copper typically has poor adhesion to glass, reaction problems with silicon and other PECVD films, and difficulties in contacting it to other metals. Approaches to solving problems with both materials are presented, and a novel reduced mask process to fabricate high resolution, high aperture ratio 10.5” SXGA (1280 × 1024) displays is described. The process uses copper gate metallurgy with redundancy, without the need for extra processing steps. The resulting displays have 150 dpi color resolution, an aperture ratio of over 35%, and excellent image quality, making them the first high resolution displays that are suitable for notebook applications.

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Note on the spectral classification of carbon stars in the photographic infrared region

Symposium - International Astronomical Union ◽

10.1017/s0074180900053080 ◽

1966 ◽

Vol 24 ◽

pp. 21-23

Author(s):

Y. Fujita

Keyword(s):

Infrared Region ◽

Spectral Classification ◽

Carbon Stars

We have investigated the spectrograms (dispersion: 8Å/mm) in the photographic infrared region fromλ7500 toλ9000 of some carbon stars obtained by the coudé spectrograph of the 74-inch reflector attached to the Okayama Astrophysical Observatory. The names of the stars investigated are listed in Table 1.

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Deposition of ternary silicon based compounds by CVD techniques

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:1999813 ◽

1999 ◽

Vol 09 (PR8) ◽

pp. Pr8-101-Pr8-107

Author(s):

F. J. Martí ◽

A. Castro ◽

J. Olivares ◽

C. Gómez-Aleixandre ◽

J. M. Albella

Keyword(s):

Silicon Based

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