Gate metal induced reduction of surface donor states of AlGaN/GaN heterostructure on Si-substrate investigated by electroreflectance spectroscopy

2012 ◽  
Vol 100 (11) ◽  
pp. 111908 ◽  
Author(s):  
Jong Hoon Shin ◽  
Young Je Jo ◽  
Kwang-Choong Kim ◽  
T. Jang ◽  
Kyu Sang Kim
Keyword(s):  
Si Substrate ◽  
Donor States ◽  
Gan Heterostructure ◽  
Electroreflectance Spectroscopy ◽  
Surface Donor

STM studies of Fermi-level pinning on the GaAs(001) surface

1993 ◽  
Vol 344 (1673) ◽  
pp. 533-543 ◽  
Keyword(s):  
Fermi Level ◽  
Valence Band ◽  
Surface Defects ◽  
Defect Density ◽  
Valence Band Maximum ◽  
Intrinsic Defect ◽  
Fermi Level Pinning ◽  
Donor States ◽  
P Type ◽  
Surface Donor

This paper reviews recent scanning tunnelling microsopy (STM) studies of Fermi-level pinning on the surface of both n- and p-type GaAs(001). The samples are all grown by molecular beam epitaxy and have a (2 x 4)/c(2 x 8) surface reconstruction. The STM has shown that on the surface of highly doped n-type GaAs(001) there is a high density of kinks in the dimer-vacancy rows of the (2 x 4) reconstruction. These kinks are found to be surface acceptors with approximately one electron per kink. The kinks form in exactly the required number to pin the Fermi-level of n-type GaAs(001) at an acceptor level close to mid gap, irrespective of doping level. The Fermi-level position is confirmed with tunnelling spectroscopy. No similar surface donor states are found on p-type GaAs(001). In this case Fermi-level pinning results from ‘intrinsic’ surface defects such as step edges. Since this intrinsic defect density is independent of doping, at high doping levels the Fermi-level on p-type GaAs(001) moves down in the band gap towards the valence band. Tunnelling spectroscopy on p-type GaAs(001) doped 10 19 cm -3 with Be shows the Fermi-level to be 150 mV above the valence band maximum

scholarly journals Growth and Device Performance of AlGaN/GaN Heterostructure with AlSiC Precoverage on Silicon Substrate

2014 ◽  
Vol 2014 ◽  
pp. 1-6
Author(s):  
Jae-Hoon Lee ◽  
Jung-Hee Lee
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Film Growth ◽  
Drain Current ◽  
Device Performance ◽  
Wetting Layer ◽  
Si Substrate ◽  
Effect Transistor ◽  
Gan Heterostructure

A crack-free AlGaN/GaN heterostructure was grown on 4-inch Si (111) substrate with initial dot-like AlSiC precoverage layer. It is believed that introducing the AlSiC layer between AlN wetting layer and Si substrate is more effective in obtaining a compressively stressed film growth than conventional Al precoverage on Si surface. The metal semiconductor field effect transistor (MESFET), fabricated on the AlGaN/GaN heterostructure grown with the AlSiC layer, exhibited normally on characteristics, such as threshold voltage of −2.3 V, maximum drain current of 370 mA/mm, and transconductance of 124 mS/mm.

High-performance normally off FET using an AlGaN/GaN heterostructure on Si substrate

2005 ◽  
Vol 275 (1-2) ◽  
pp. e1091-e1095 ◽  
Author(s):  
Nariaki Ikeda ◽  
Jiang Li ◽  
Hironari Takehara ◽  
Takahiro Wada ◽  
Seikoh Yoshida
Keyword(s):  
High Performance ◽  
Si Substrate ◽  
Gan Heterostructure

Impact of Epi-Layer Quality on Reliability of GaN/AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

2013 ◽  
Vol 60 (12) ◽  
pp. 4125-4132 ◽  
Author(s):  
Yuji Ando ◽  
Kohji Ishikura ◽  
Yasuhiro Murase ◽  
Kazunori Asano ◽  
Isao Takenaka ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Si Substrate ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

scholarly journals Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

Electronics ◽  
2021 ◽  
Vol 10 (24) ◽  
pp. 3096
Author(s):  
P. Vigneshwara Raja ◽  
Nandha Kumar Subramani ◽  
Florent Gaillard ◽  
Mohamed Bouslama ◽  
Raphaël Sommet ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Dispersion ◽  
Drain Current ◽  
Surface Region ◽  
Electron Trap ◽  
High Electron ◽  
Trap States ◽  
Dispersion Properties ◽  
Donor States ◽  
Surface Donor

The buffer and surface trapping effects on low-frequency (LF) Y-parameters of Fe-doped AlGaN/GaN high-electron mobility transistors (HEMTs) are analyzed through experimental and simulation studies. The drain current transient (DCT) characterization is also carried out to complement the trapping investigation. The Y22 and DCT measurements reveal the presence of an electron trap at 0.45–0.5 eV in the HEMT structure. On the other hand, two electron trap states at 0.2 eV and 0.45 eV are identified from the LF Y21 dispersion properties of the same device. The Y-parameter simulations are performed in Sentaurus TCAD in order to detect the spatial location of the traps. As an effective approach, physics-based TCAD models are calibrated by matching the simulated I-V with the measured DC data. The effect of surface donor energy level and trap density on the two-dimensional electron gas (2DEG) density is examined. The validated Y21 simulation results indicate the existence of both acceptor-like traps at EC –0.45 eV in the GaN buffer and surface donor states at EC –0.2 eV in the GaN/nitride interface. Thus, it is shown that LF Y21 characteristics could help in differentiating the defects present in the buffer and surface region, while the DCT and Y22 are mostly sensitive to the buffer traps.

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