Negative substrate bias induced modifications of the physical properties of DC sputter deposited nano-crystalline Mo thin films

In this report, detailed studies of the nano-crystalline graphitic (NCG) carbon thin films deposited by filtered cathodic vacuum arc (FCVA) following its first discovery and first electrical characterization have been performed. The microstructure of carbon thin film can be modified by applying in situ treatment techniques (such as altering the thermal and carbon ion deposition energy). It was found that highly electrical conductive carbon thin films with graphitic planes can also be deposited at a low deposition temperature instead of the previously reported high deposition temperature with a 20% improvement in electrical characteristic. The detailed electrical characterization comparison between amorphous carbon and NCG has been conducted. To conclude, NCG carbon can be fabricated at deposition temperature above 400 °C and exhibits increasing through film Ohmic electrical conductivity with increasing deposition temperature. At low temperatures, NCG carbon can be produced by increasing the negative substrate bias above 300 V (impinging carbon ion energy). Higher negative substrate bias leads to thinner amorphous interface layer hence better electrical conductivity.

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Electro-Optic and Non-Linear Optical Coefficients of (Pb, La)(Zr, Ti)O3, BaTiO3, (Sr, Ba)Nb2O6 and Ba2NaNb5O15 Thin Films

MRS Proceedings ◽

10.1557/proc-200-261 ◽

1990 ◽

Vol 200 ◽

Cited By ~ 16

Author(s):

A. Y. Wu ◽

Feiling Wang ◽

Ching-Bo Juang ◽

Carlos Bustamante

Keyword(s):

Thin Films ◽

Physical Properties ◽

Higher Order ◽

Fused Silica ◽

Optical Polarization ◽

Electro Optic ◽

Non Linear ◽

Confocal Scanning ◽

Linear Optical ◽

Sputter Deposited

ABSTRACTThe electro-optic properties of sputter-deposited PLZT, BaTiO3, SBN, and BNN films on fused silica substrates have been studied using a confocal scanning optical polarization microscope. The Pockels, Kerr, and higher order electro-optic coefficients and their relations to the non-linear optical coefficients in the films are presented. The materials and physical properties of the films are discussed.

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Nano-Structured TiN Thin Films Deposited by Single Ion Beam Reactive Sputtering

Materials Science Forum ◽

10.4028/www.scientific.net/msf.555.303 ◽

2007 ◽

Vol 555 ◽

pp. 303-308

Author(s):

Ž. Bogdanov ◽

N. Popović ◽

M. Zlatanović ◽

B. Goncić ◽

Z. Rakočević ◽

...

Keyword(s):

Thin Films ◽

Partial Pressure ◽

Ion Beam ◽

Ion Source ◽

Preferred Orientation ◽

Substrate Bias ◽

Substrate Bias Voltage ◽

Substrate Current ◽

Tin Thin Films ◽

Negative Substrate Bias

The reactive sputter deposition of TiN thin films onto glass substrate at the ambient temperature using a homemade broad beam argon ion source was investigated in order to deposit the films with nanostructural characteristics. While constant Ar beam energy of 2 keV was used, the N2 partial pressure and the substrate current, adjusted by different accelerator grid potentials (Vacc) were varied. A negative substrate bias voltage (100 V) was additionally applied. The TiN film structure was investigated by XRD and STM methods. All deposited films exhibited (220) preferred orientation, and the change in normalized peak intensity (I220/d), lattice spacing (d220) and full-with at half-maximum (FWHM) were investigated. As a result of higher energy bombardment with 100 V negative substrate bias, compared to the substrate current change with Vacc, nearly constant (220) peak broadening with the increase of N2 partial pressure was obtained. The measured grain diameter (STM and XRD) confirms that the grain size is less than 12 nm, and the (220) preferred orientation was disturbed but not destructed.

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Microstructure and physical properties of sputter-deposited Cu-Mo thin films

Thin Solid Films ◽

10.1016/j.tsf.2018.03.039 ◽

2018 ◽

Vol 653 ◽

pp. 301-308 ◽

Cited By ~ 4

Author(s):

Imane Souli ◽

Velislava L. Terziyska ◽

Johannes Zechner ◽

Christian Mitterer

Keyword(s):

Thin Films ◽

Physical Properties ◽

Sputter Deposited

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Effect of substrate bias on sputter-deposited TiCx, TiNy and TiCxNy thin films

Surface and Coatings Technology ◽

10.1016/0257-8972(95)02594-4 ◽

1995 ◽

Vol 76-77 ◽

pp. 142-148 ◽

Cited By ~ 38

Author(s):

A.A. Adjaottor ◽

E.I. Meletis ◽

S. Logothetidis ◽

I. Alexandrou ◽

S. Kokkou

Keyword(s):

Thin Films ◽

Substrate Bias ◽

Sputter Deposited

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Argon incorporation on silicon carbide thin films deposited by bias co-sputtering technique

MRS Proceedings ◽

10.1557/opl.2012.1147 ◽

2012 ◽

Vol 1433 ◽

Cited By ~ 2

Author(s):

H. S. Medeiros ◽

R. S. Pessoa ◽

M. A. Fraga ◽

L. V. Santos ◽

H. S. Maciel ◽

...

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Substrate Bias ◽

Substrate Bias Voltage ◽

Substrate Heating ◽

Opposite Behavior ◽

Sic Film ◽

Sic Films ◽

Argon Content ◽

Negative Substrate Bias

ABSTRACTThe influence of negative substrate bias on the chemical, electrical and mechanical properties of silicon carbide (SiC) thin films deposited onto (100) silicon substrate by dc magnetron cosputtering without external substrate heating is reported. These studies were performed by using the following techniques: Rutherford backscattering spectroscopy (RBS), profilometry, Raman spectroscopy, four-point probe method and nanoindentation. The results indicate that there is a good correlation between the substrate bias voltage and the argon incorporation into SiC film, namely, the SiC films deposited under substrate bias of –200 V and –300 V have higher argon content and higher elastic modulus and hardness than those deposited at 0 V. An opposite behavior was found for electrical resistivity: the SiC deposited at –300 V has resistivity of 0.45 Ω.cm whereas the deposited at 0 V has 7.0 Ω.cm.

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The Texture and Electrical Properties of Zr and ZrNx Thin Films Deposited by Dc Sputtering

MRS Proceedings ◽

10.1557/proc-721-j4.9 ◽

2002 ◽

Vol 721 ◽

Cited By ~ 2

Author(s):

Chuan-Pu Liu ◽

Heng-Ghieh Yang

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Substrate Temperature ◽

Barrier Properties ◽

Processing Parameters ◽

Substrate Bias ◽

Dc Magnetron Sputtering ◽

Two Samples ◽

In The Beginning ◽

Negative Substrate Bias

AbstractZr and ZrNx thin films are grown on Si(001) by DC magnetron sputtering. The detailed microstructure evolution and its corresponding electrical properties are systematically studied with various processing parameters including applied power, N2/Ar ratio, substrate bias and substrate temperature by 4-point probe, EPMA and XRD. It is found that while the negative substrate bias can decrease the resistivity of both Zr and ZrNx thin films, the texture microstructure of each thin film in the series is changed differently. As increasing N2/Ar ratio, the resistivity decreases in the beginning and then increases rapidly, which results from the variations of compositions and phases, while this minimum resistivity point shifts to a higher N2/Ar ratio for the films sputtered under higher applied power. The substrate temperature not only decreases the ZrNx film resistivity, but also increases the (002) preferred orientations most efficiently. The cause of each phenomenon is briefly discussed. Finally, two samples showing different degrees of (002) to (111) textures are annealed to investigate the diffusion barrier properties from a sandwich structure of Cu/ZrNx/Si(001). Results from 4-point probe reveal that the film with higher degree of (111) textures has a superior thermal stability.

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Effect of deposition interruption and substrate bias on the structure of sputter-deposited yttria-stabilized zirconia thin films

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1501573 ◽

2002 ◽

Vol 20 (5) ◽

pp. 1744-1748 ◽

Cited By ~ 14

Author(s):

David E. Ruddell ◽

Brian R. Stoner ◽

Jeffrey Y. Thompson

Keyword(s):

Thin Films ◽

Yttria Stabilized Zirconia ◽

Substrate Bias ◽

Stabilized Zirconia ◽

Sputter Deposited

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The effect of oxygen partial pressure on physical properties of nano-crystalline silver oxide thin films deposited by RF magnetron sputtering

Crystal Research and Technology ◽

10.1002/crat.201100206 ◽

2011 ◽

pp. n/a-n/a ◽

Cited By ~ 3

Author(s):

P. Narayana Reddy ◽

A. Sreedhar ◽

M. Hari Prasad Reddy ◽

S. Uthanna ◽

J. F. Pierson

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Physical Properties ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Silver Oxide ◽

Rf Magnetron Sputtering ◽

Oxide Thin Films ◽

Nano Crystalline ◽

Effect Of Oxygen

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Titanium Hafnium Oxide Alloy Films by a Novel Sub-Atomic Layer Sputtering Process for High Index and Graded Index Applications

MRS Proceedings ◽

10.1557/opl.2013.1089 ◽

2013 ◽

Vol 1565 ◽

Author(s):

Nobuhiko P. Kobayashi ◽

R. Ernest Demaray ◽

Junce Zhang ◽

Kate J. Norris ◽

David M. Fryauf ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Physical Properties ◽

Hafnium Oxide ◽

Atomic Layer ◽

Substrate Bias ◽

Titanium Oxides ◽

Optical Extinction ◽

Graded Index ◽

Pulsed Dc

ABSTRACTWe studied physical properties of titanium hafnium oxide (TixHf1-xO2) alloy thin films deposited by pulsed DC reactive magnetron sputtering with AC substrate bias. Thin films of two end oxides, hafnium oxides (HfO2) and titanium oxides (TiO2), and their alloys TixHf1-xO2 with a range of compositions deposited with and without the substrate bias were compared to study the dependence of physical properties of the thin films on the substrate bias. Structural, chemical and optical properties of the thin films were analyzed to assess inter-relationship among these properties. Thin films deposited with the AC substrate bias consistently show much higher refractive index and significantly lower optical extinction coefficient than those of thin films deposited without the substrate bias suggesting that characteristic microstructures developed in these thin films are responsible for the differences in the optical properties.

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