All-room-temperature processed high flexibility resistive switching memory by ultraviolet-radioactive induction

2019 ◽  
Vol 6 (11) ◽  
pp. 115923 ◽  
Author(s):  
Weijie Duan
Keyword(s):  
Resistive Switching ◽  
Room Temperature ◽  
Resistive Switching Memory ◽  
High Flexibility ◽  
Switching Memory

Room temperature deposited oxygen-deficient CeO2− layer for multilevel resistive switching memory

2019 ◽  
Vol 483 ◽  
pp. 803-810 ◽  
Author(s):  
Muhammad Ismail ◽  
Asma Ahmad ◽  
Khalid Mahmood ◽  
Tahira Akbar ◽  
Anwar Manzoor Rana ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Room Temperature ◽  
Resistive Switching Memory ◽  
Switching Memory

A resistive switching memory device with a negative differential resistance at room temperature

2018 ◽  
Vol 113 (5) ◽  
pp. 053502 ◽  
Author(s):  
Mayameen S. Kadhim ◽  
Feng Yang ◽  
Bai Sun ◽  
Yushu Wang ◽  
Tao Guo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance ◽  
Memory Device ◽  
Resistive Switching Memory ◽  
Switching Memory

Room-Temperature, Solution-Processed SiOx via Photochemistry Approach for Highly Flexible Resistive Switching Memory

2020 ◽  
Vol 12 (50) ◽  
pp. 56186-56194
Author(s):  
Pengfei Li ◽  
Dan Wang ◽  
Zongbo Zhang ◽  
Yunlong Guo ◽  
Lang Jiang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Room Temperature ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Temperature Solution ◽  
Switching Memory

Light-modulated resistive switching memory behavior in ZnO/BaTiO3/ZnO multilayer

2016 ◽  
Vol 30 (14) ◽  
pp. 1650141 ◽  
Author(s):  
Lujun Wei ◽  
Bai Sun ◽  
Wenxi Zhao ◽  
Hongwei Li ◽  
Xiangjiang Jia ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Si Substrate ◽  
Resistive Switching Memory ◽  
Good Repeatability ◽  
Nanoscale Structure ◽  
Switching Characteristics ◽  
Switching Memory ◽  
Sputtering System

Nanoscale structure ZnO/BaTiO3/ZnO multilayer was fabricated on silicon (Si) substrate by RF magnetron sputtering system. The light-modulated resistive switching characteristics in ZnO/BaTiO3/ZnO devices were observed. The light-modulated resistive switching shows good repeatability at room temperature.

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