Light-modulated resistive switching memory behavior in ZnO/BaTiO3/ZnO multilayer

2016 ◽  
Vol 30 (14) ◽  
pp. 1650141 ◽  
Author(s):  
Lujun Wei ◽  
Bai Sun ◽  
Wenxi Zhao ◽  
Hongwei Li ◽  
Xiangjiang Jia ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Si Substrate ◽  
Resistive Switching Memory ◽  
Good Repeatability ◽  
Nanoscale Structure ◽  
Switching Characteristics ◽  
Switching Memory ◽  
Sputtering System

Nanoscale structure ZnO/BaTiO3/ZnO multilayer was fabricated on silicon (Si) substrate by RF magnetron sputtering system. The light-modulated resistive switching characteristics in ZnO/BaTiO3/ZnO devices were observed. The light-modulated resistive switching shows good repeatability at room temperature.

Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure

2017 ◽  
Vol 5 (9) ◽  
pp. 2259-2267 ◽  
Author(s):  
Xiaobing Yan ◽  
Zhenyu Zhou ◽  
Bangfu Ding ◽  
Jianhui Zhao ◽  
Yuanyuan Zhang
Keyword(s):  
Thermal Oxidation ◽  
Resistive Switching ◽  
Tunneling Junction ◽  
Si Substrate ◽  
Resistive Switching Memory ◽  
Junction Structure ◽  
Switching Memory ◽  
Oxidation Growth

In this study, a simple TiN/SiO2/p-Si tunneling junction structure was fabricated via thermal oxidation growth on a Si substrate annealed at 600 °C.

Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory

2013 ◽  
Vol 529 ◽  
pp. 389-393
Author(s):  
Hsueh-Chih Tseng ◽  
Ting-Chang Chang ◽  
Kai-Hung Cheng ◽  
Jheng-Jie Huang ◽  
Yu-Ting Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Characteristics ◽  
Interface Type ◽  
Switching Memory ◽  
Filament Type

scholarly journals Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO2-based resistive switching memory for neuromorphic applications

RSC Advances ◽  
2020 ◽  
Vol 10 (52) ◽  
pp. 31342-31347
Author(s):  
Sobia Ali Khan ◽  
Sungjun Kim
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Voltage Amplitude ◽  
Resistive Switching Memory ◽  
Sweep Voltage ◽  
Switching Characteristics ◽  
Switching Memory

Diverse resistive switching behaviors are observed in the Pt/HfAlOx/TiN memory device depending on the compliance current, the sweep voltage amplitude, and the bias polarity.

Room temperature deposited oxygen-deficient CeO2− layer for multilevel resistive switching memory

2019 ◽  
Vol 483 ◽  
pp. 803-810 ◽  
Author(s):  
Muhammad Ismail ◽  
Asma Ahmad ◽  
Khalid Mahmood ◽  
Tahira Akbar ◽  
Anwar Manzoor Rana ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Room Temperature ◽  
Resistive Switching Memory ◽  
Switching Memory

A resistive switching memory device with a negative differential resistance at room temperature

2018 ◽  
Vol 113 (5) ◽  
pp. 053502 ◽  
Author(s):  
Mayameen S. Kadhim ◽  
Feng Yang ◽  
Bai Sun ◽  
Yushu Wang ◽  
Tao Guo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance ◽  
Memory Device ◽  
Resistive Switching Memory ◽  
Switching Memory
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