Garment-Integrated Thermoelectric Generator Arrays for Wearable Body Heat Harvesting

Author(s):  
Linden K. Allison ◽  
Trisha Andrew

Abstract Wearable thermoelectric generator arrays have the potential to use waste body heat to power on-body sensors and create, for example, self-powered health monitoring systems. In this work, we demonstrate that a surface coating of a conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT-Cl), created on one face of a wool felt using a chemical vapor deposition method was able to manifest a Seebeck voltage when subjected to a temperature gradient. The wool felt devices can produce voltage outputs of up to 120 mV when measured on a human body. Herein, we present a strategy to create arrays of polymer-coated fabric thermopiles and to integrate such arrays into familiar garments that could become a part of a consumer’s daily wardrobe. Using wool felt as the substrate fabric onto which the conducting polymer coating is created allowed for a higher mass loading of the polymer on the fabric surface and shorter thermoelectric legs, as compared to our previous iteration. Six or eight of these PEDOT-Cl coated wool felt swatches were sewed onto a backing/support fabric and interconnected with silver threads to create a coupled array, which was then patched onto the collar of a commercial three-quarter zip jacket. The observed power output from a six-leg array while worn by a healthy person at room temperature (ΔT = 15 °C) was 2 µW, which is the highest value currently reported for a polymer thermoelectric device measured at room temperature.

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
Yongqin Chang ◽  
Pengwei Wang ◽  
Qingling Sun ◽  
Yongwei Wang ◽  
Yi Long

(Mn,Fe) codoped ZnO nanowires were synthesized on silicon substrates in situ using a chemical vapor deposition method. The structure and property of the products were investigated by X-ray, electron microscopy, Raman, photoluminescence, and superconducting quantum interference device magnetometer. The doped nanowires are of pure wurtzite phase with single crystalline, and the elements distribute homogeneously in the doped nanowires. Photoluminescence spectrum of the doped nanowires is dominated by a deep-level emission with a negligible near-band-edge emission. The magnetic hysteresis curve with a coercive field of 35 Oe is clearly observed at 300 K, resulting from room-temperature ferromagnetic ordering in the (Mn,Fe) codoped ZnO nanowires, which has great potential applications for spintronics devices.


2014 ◽  
Vol 1633 ◽  
pp. 61-67 ◽  
Author(s):  
Naoya Yamaguchi ◽  
Eichi Nagatomi ◽  
Takahiro Kato ◽  
Koichiro Ohishi ◽  
Yasuhiro Tamayama ◽  
...  

ABSTRACTThe effects of N2O gas addition on the properties of zinc oxide films grown on a-plane (11-20) sapphire (a-Al2O3) substrates were investigated, using a chemical vapor deposition method based on the reaction between dimethylzinc and high-energy H2O produced by a Pt-catalyzed H2-O2 reaction. By employing an optimal N2O gas pressure, both the film crystallinity and crystal orientation were improved. Subsequent to treatment with N2O, the electron mobility of films at room temperature increased from 207 to 234 cm2/Vs while the electron concentration decreased at low temperatures. In addition, the photoluminescence peak intensity of the nearband-edge emission was increased.


2021 ◽  
Vol 118 (32) ◽  
pp. e2106124118
Author(s):  
Yunfan Guo ◽  
Yuxuan Lin ◽  
Kaichen Xie ◽  
Biao Yuan ◽  
Jiadi Zhu ◽  
...  

Technology advancements in history have often been propelled by material innovations. In recent years, two-dimensional (2D) materials have attracted substantial interest as an ideal platform to construct atomic-level material architectures. In this work, we design a reaction pathway steered in a very different energy landscape, in contrast to typical thermal chemical vapor deposition method in high temperature, to enable room-temperature atomic-layer substitution (RT-ALS). First-principle calculations elucidate how the RT-ALS process is overall exothermic in energy and only has a small reaction barrier, facilitating the reaction to occur at room temperature. As a result, a variety of Janus monolayer transition metal dichalcogenides with vertical dipole could be universally realized. In particular, the RT-ALS strategy can be combined with lithography and flip-transfer to enable programmable in-plane multiheterostructures with different out-of-plane crystal symmetry and electric polarization. Various characterizations have confirmed the fidelity of the precise single atomic layer conversion. Our approach for designing an artificial 2D landscape at selective locations of a single layer of atoms can lead to unique electronic, photonic, and mechanical properties previously not found in nature. This opens a new paradigm for future material design, enabling structures and properties for unexplored territories.


2012 ◽  
Vol 217-219 ◽  
pp. 226-229 ◽  
Author(s):  
Jiang Lei Lu ◽  
Guang Long Wang ◽  
Lian Feng Sun ◽  
Feng Qi Gao ◽  
Jian Hui Chen ◽  
...  

The in-plane thermoelectric generator (TEG) was ingeniously designed when the thermal gas flowed over the carbon nanotube (CNT) membrane at the modest speed of a few meters per second. It was composed of the glass substrate, aurum electrodes and CNT membrane synthesized by a floating catalyst chemical vapor deposition method. In the air under atmospheric pressure, the experimental results showed that the maximal output voltage could reach 1.7 mV. It related not only with the temperature difference between the hot-side and cold-side, but also the temperature gradient of the CNT membrane which was closely dependent on the velocity and temperature of the gas flow. The multi-physical power mechanism was applied to interpret the energy conversion, which included the coupling relation of the fluid dynamics, heat transmission and Seebeck effect. This novel method could effectively enhance the output voltage, extend the applied range of TEG and had a fine prospect.


2019 ◽  
Vol 7 (35) ◽  
pp. 10996-11004
Author(s):  
Roshan Jesus Mathew ◽  
Christy Roshini Paul Inbaraj ◽  
Raman Sankar ◽  
Shemsia Mohammed Hudie ◽  
Revannath Dnyandeo Nikam ◽  
...  

Ultrathin Td-Mo0.27W0.71Te2.02 films synthesized using a chemical vapor deposition method exhibit a non-saturating magnetoresistance of 11% at room temperature.


2009 ◽  
Vol 24 (5) ◽  
pp. 1716-1721 ◽  
Author(s):  
Chul Hwan Choi ◽  
Seon Hyo Kim ◽  
Hyo Jin Lee ◽  
Yoon Hee Jeong ◽  
Myung Hwa Jung

Ferromagnetic Cu-doped GaN film was grown on a GaN-buffered sapphire (0001) substrate by a hybrid physical-chemical-vapor-deposition method (HPCVD). The GaCuN film (Cu: 3.6 at.%) has a highly c-axis-oriented hexagonal wurtzite crystal structure, which is similar to GaN buffer but without any secondary phases such as metallic Cu, CuxNy, and CuxGay compounds. Two weak near-band edge (NBE) emissions at 3.38 eV and donor-acceptor-pair (DAP) transition at 3.2 eV with a typical strong broad yellow emission were observed in photoluminescence spectra for GaN buffer. In contrast, the yellow emission was completely quenched in GaCuN film because Ga vacancies causing the observed yellow emission in undoped GaN were substituted by Cu atoms. In addition, GaCuN film exhibits a blue shift of NBE emission, which could be explained with the +2 oxidation state of Cu ions, replacing +3 Ga ions resulting in band gap increment. The valance sate of Cu in GaCuN film was also confirmed by x-ray photoelectron spectroscopy (XPS) analysis. The GaCuN film shows ferromagnetic ordering and possesses a residual magnetization of 0.12 emu/cm3 and a coercive field of 264 Oe at room temperature. The unpaired spins in Cu2+ ions (d9) are most likely to be responsible for the observed ferromagnetism in GaCuN.


2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.


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