Ultralow-Power Current Reference Circuit with Low Temperature Dependence

In order to provide steady voltage for PWM controller, a design of bipolar voltage reference circuit with high performance is presented. The circuit based on the compensation principle between Zener diode and B-E junction of triode is used in PWM controller and can bring out multi-way steady voltages, moreover, there is a high power supply rejection ratio (PSRR) and low temperature dependence. The results of simulation and test in Candence with bipolar process of HuaYue SB45 show that the temperature coefficient is about 1.2ppm/°C in the temperature range -55~125°C. The line regulation is about 0.4mV/V in 8~30V and the PSRR is 77.54dB. The design of circuit can satisfy the requirements of PWM controller.

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Ultralow-Power Temperature-Insensitive Current Reference Circuit

IEEE Sensors, 2005. ◽

10.1109/icsens.2005.1597922 ◽

2006 ◽

Cited By ~ 7

Author(s):

T. Hirose ◽

T. Asai ◽

Y. Amemiya ◽

T. Matsuoka ◽

K. Taniguchi

Keyword(s):

Current Reference ◽

Reference Circuit ◽

Ultralow Power

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A nano-ampere current reference circuit and its temperature dependence control by using temperature characteristics of carrier mobilities

2010 Proceedings of ESSCIRC ◽

10.1109/esscirc.2010.5619819 ◽

2010 ◽

Cited By ~ 54

Author(s):

Tetsuya Hirose ◽

Yuji Osaki ◽

Nobutaka Kuroki ◽

Masahiro Numa

Keyword(s):

Temperature Dependence ◽

Temperature Characteristics ◽

Current Reference ◽

Reference Circuit

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An All CMOS Current Reference

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.135-136.192 ◽

2011 ◽

Vol 135-136 ◽

pp. 192-197

Author(s):

Lin An Li ◽

Ming Tang ◽

Wen Ou ◽

Yang Hong

Keyword(s):

Low Temperature ◽

Temperature Coefficient ◽

Supply Voltage ◽

Current Source ◽

Positive Temperature Coefficient ◽

Positive Temperature ◽

Signal Process ◽

Temperature Variations ◽

Current Reference ◽

Reference Circuit

In this paper, an all CMOS current reference circuit which generates a reference current independent of PVT (Process, supply Voltage, and Temperature) variations is presented. The circuit consists of a self-biased current source (SBCS) and two nested connected transistors which supply a voltage with positive temperature coefficient and the resulting reference circuit has low temperature coefficient. It is based on CSMC 0.5um mixed-signal process with the supply voltage of 5V. The precision of reference current is about ±3.05% when considering the process, supply voltage and temperature variation at the same time.

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Temperature-compensated CMOS current reference circuit for ultralow-power subthreshold LSIs

IEICE Electronics Express ◽

10.1587/elex.5.204 ◽

2008 ◽

Vol 5 (6) ◽

pp. 204-210 ◽

Cited By ~ 12

Author(s):

Tetsuya Hirose ◽

Tetsuya Asai ◽

Yoshihito Amemiya

Keyword(s):

Current Reference ◽

Reference Circuit ◽

Ultralow Power

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Low voltage current reference circuit with low temperature coefficient

2018 IEEE Distributed Computing, VLSI, Electrical Circuits and Robotics (DISCOVER) ◽

10.1109/discover.2018.8674109 ◽

2018 ◽

Cited By ~ 1

Author(s):

M. K. Amaljith ◽

G. Hanumantha Rao ◽

S. Rekha

Keyword(s):

Low Temperature ◽

Temperature Coefficient ◽

Low Voltage ◽

Current Reference ◽

Reference Circuit

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The Microscopic Structure Of Shallow Donors In Silicon Carbide

MRS Proceedings ◽

10.1557/proc-442-619 ◽

1996 ◽

Vol 442 ◽

Author(s):

J.-M. Spaeth ◽

S. Greulich-Weber ◽

M. März ◽

E. N. Kalabukhova ◽

S. N. Lukin

Keyword(s):

High Temperature ◽

Low Temperature ◽

Temperature Dependence ◽

Double Resonance ◽

Epr Spectra ◽

Electron Nuclear Double Resonance ◽

Paramagnetic Resonance ◽

Vacancy Pair ◽

Temperature Spectra ◽

Electron Paramagnetic

AbstractThe electronic structure of nitrogen donors in 6H-, 4H- and 3C-SiC is investigated by measuring the nitrogen hyperfine (hf) interactions with electron nuclear double resonance (ENDOR) and the temperature dependence of the hf split electron paramagnetic resonance (EPR) spectra. Superhyperfine (shf) interactions with many shells of 13C and 29Si were measured in 6H-SiC. The hf and shf interactions are discussed in the framework of effective mass theory. The temperature dependence is explained with the thermal occupation of the lowest valley-orbit split A1 and E states. It is proposed that the EPR spectra of P donors observed previously in neutron transmuted 6H-SiC at low temperature (<10K) and high temperature (>60K) are all due to substitutional P donors on the two quasi-cubic and hexagonal Si sites, whereby at low temperature the E state is occupied and at high temperature the A1 state. The low temperature spectra are thus thought not to be due to P-vacancy pair defects as proposed previously.

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