Particle generation and recombination
This chapter introduces a semi-classical interpretation of particle generation and recombination using the bimolecular recombination coefficient and radiative lifetime. Particles—electrons and holes in the semiconductor—can be generated and recombine because of the multitude of energetic interactions. Radiative recombination and generation arise in the interaction with photons and can be spontaneous or stimulated. Important non-radiative processes such as the Hall-Shockley-Read process and the Auger process, which arise in multiparticle interactions, are discussed. Auger recombination is common at small bandgaps and high concentrations but also appears in large bandgap materials under high injection conditions. Impact ionization is an example of Auger generation arising from high fields. The Auger process is analyzed quantum-mechanically to show how energy and momentum conservation equations and quantum restrictions lead to the observed behavior. The chapter also discusses recombination at surfaces, which is inevitably present because of the defects and confined states arising from symmetry breaking.