Quantum confinement and monolayer semiconductors

2020 ◽  
pp. 649-698
Author(s):  
Sandip Tiwari
Keyword(s):  
Quantum Wells ◽  
Electronic Properties ◽  
Quantum Confinement ◽  
Envelope Function ◽  
Optical Transitions ◽  
Selection Rules ◽  
Quantum Confined

This chapter brings together several themes and perspectives by exploring them in quantum-confined conditions or in monolayer crystals. In it, confinement of electrons and holes at heterostructure interfaces, in inversion layers, in quantum wells and in superlattices is analyzed using the envelope function to illustrate the variety of interactions that must be properly accounted for. The formation of subbands in confinement, minibands in superlattices, and transmission, reflection and resonance at confined barriers and wells is discussed. Propagation, screening, scattering and the behavior of shallow dopants are discussed to illustrate changes with reduction of dimensions. Particular emphasis is placed on optical transitions to illustrate the changes in selection rules for interband and intraband transitions. Confined semiconductors are contrasted with monolayer semiconductors, using graphene and nanotubes as examples whose analysis and electronic properties are discussed, to compare them with the semiconductor discussions in earlier chapters.

Basics of Envelope-Function Theory

2020 ◽  
pp. 239-270
Author(s):  
Vurgaftman Igor
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Quantum Confinement ◽  
Function Theory ◽  
Layered Materials ◽  
Envelope Function ◽  
Spin Splitting ◽  
Quantum Structures

The chapter shows how the bulk theory described in Part I can be generalized within the envelope-function framework to model the band structure of layered materials with quantum confinement of carriers such as quantum wells or superlattices. In practice, the approach amounts to substituting derivatives for wavevector components in suitably chosen Hamiltonians as well as augmenting them with interface terms. It also discusses the spin splitting of the states of the quantum structures that arises from structural and intrinsic asymmetries.

On thon the Photoemission from Quantum Confined Strained III–V Systems

1995 ◽  
Vol 379 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
B. Nag ◽  
G. Mazumder
Keyword(s):  
Quantum Dots ◽  
Film Thickness ◽  
Quantum Wells ◽  
Electron Concentration ◽  
Quantum Confinement ◽  
Dispersion Law ◽  
Quantum Confined ◽  
Electron Dispersion ◽  
Lattice Matched ◽  
Theoretical Results

ABSTRACTIn this paper we have studied the photoemission from quantum wells (QW), quantum wells wires (QWWs) and quantum dots (QDs) of quantum confined strained III–V compounds on the basis of a newly formulated electron dispersion law. It is found taking such quantum confined Hg1–xCdxTe and In1–xGaxAsyP1–y lattice matched InP as examples that the photoemission increases with increasing energy of the incident photons in a ladder like manner and also exhibits oscillatory dependences with changing electron concentration and film thickness respectively for all types quantum confinement. The photoemitted current is greatest in strained QDs and least in unstrained QWs. In addition the theoretical results are in agreement with the experimental datas as given elsewhere.

Influence of Growth Orientation and Uniaxial Stress on the Electronic Properties of GaAs / GaAlAs Quantum Wells

1992 ◽  
Vol 281 ◽  
Author(s):  
N. Saidi ◽  
K. Zitouni ◽  
A. Kadri
Keyword(s):  
Quantum Wells ◽  
Electronic Properties ◽  
Effective Mass ◽  
Conduction Band ◽  
Uniaxial Stress ◽  
Envelope Function ◽  
Energy Dispersion ◽  
Growth Orientation ◽  
Gaas Substrates ◽  
Valence Bands

ABSTRACTUsing the envelope function formalism and the effective mass thecry, we have studied the E(k) energy dispersion and the confinement energies of the lower lying conduction band and the higher lying valence bands states in GaAs /GaAlAs Single Qantum Well (SQW) structures grown on GaAs substrates with different orientations of the growth axis :(001),(111),and (113). Then, the valence subbands dispersions are calculated away from the zone center for a given well width and under uniaxial stress for the three different growth directions

scholarly journals Quasi-band structure of quantum-confined nanocrystals

2021 ◽  
Author(s):  
Marius Buerkle ◽  
Mickäel Lozac’h ◽  
Davide Mariotti ◽  
Vladimir Svrcek
Keyword(s):  
Particle Size ◽  
Band Structure ◽  
Electronic Properties ◽  
Finite Temperature ◽  
Quantum Confinement ◽  
Finite Size ◽  
Surface Effects ◽  
Structure Theory ◽  
Discrete States ◽  
Quantum Confined

Abstract We discuss the electronic properties of quantum-confined nanocrystals. In particular, we show how, starting from the discrete molecular states of small nanocrystals, an approximate band structure (quasi-band structure) emerges with increasing particle size. Finite temperature is found to broaden the discrete states in energy space forming even for nanocrystals in the quantum-confinement regime quasi-continuous bands in k-space. This bands can be, to a certain extend, interpreted along the lines of standard band structure theory, while taking also finite size and surface effects into account. We discuss this on various prototypical nanocrystal systems.

Impact of quantum confinement and quantum confined Stark effect on biexciton binding energy in GaN∕AlGaN quantum wells

2008 ◽  
Vol 93 (15) ◽  
pp. 152105 ◽  
Author(s):  
F. Stokker-Cheregi ◽  
A. Vinattieri ◽  
E. Feltin ◽  
D. Simeonov ◽  
J. Levrat ◽  
...  
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Quantum Confinement ◽  
Stark Effect ◽  
Quantum Confined Stark Effect ◽  
Biexciton Binding Energy ◽  
Quantum Confined

The quantum confined Pockels effect in GaAs-based multi-quantum wells

1999 ◽  
Vol 09 (PR2) ◽  
pp. Pr2-37 ◽  
Author(s):  
O. Krebs ◽  
P. Voisin ◽  
D. Rondi ◽  
J. L. Gentner ◽  
L. Goldstein ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Pockels Effect ◽  
Quantum Confined

Structural and electronic properties of ZnMgO/ZnO quantum wells

2005 ◽  
Vol 38 (4-6) ◽  
pp. 455-463 ◽  
Author(s):  
C. Morhain ◽  
X. Tang ◽  
M. Teisseire-Doninelli ◽  
B. Lo ◽  
M. Laügt ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electronic Properties ◽  
Structural And Electronic Properties

scholarly journals Morphological characterization and electronic properties of pristine and oxygen-exposed graphene nanoribbons on Ag(110)

2021 ◽  
Author(s):  
Jose Eduardo Barcelon ◽  
Marco Smerieri ◽  
Giovanni Carraro ◽  
Pawel Wojciechowski ◽  
Luca Vattuone ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Quantum Confinement ◽  
Energy Gap ◽  
Graphene Nanoribbons ◽  
Morphological Characterization

Graphene nanoribbons (GNRs) are at the frontier of research on graphene materials since the 1D quantum confinement of electrons allows for the opening of an energy gap.

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