Studies of the Electronic Properties of Two-Dimensionally Confined Carriers in MIS (Metal-Insulator-Semiconductor) Inversion/Accumulation Layers, Heterojunctions and Quantum Wells.

1983 ◽  
Author(s):  
A. Madhukar
Keyword(s):  
Quantum Wells ◽  
Electronic Properties ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Electronic properties of InAs-based metal-insulator-semiconductor (MIS) structures

2001 ◽  
Vol 35 (9) ◽  
pp. 1063-1071 ◽  
Author(s):  
G. L. Kuryshev ◽  
A. P. Kovchavtsev ◽  
N. A. Valisheva
Keyword(s):  
Electronic Properties ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Mis Structures

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

Structural and electronic properties of ZnMgO/ZnO quantum wells

2005 ◽  
Vol 38 (4-6) ◽  
pp. 455-463 ◽  
Author(s):  
C. Morhain ◽  
X. Tang ◽  
M. Teisseire-Doninelli ◽  
B. Lo ◽  
M. Laügt ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electronic Properties ◽  
Structural And Electronic Properties

Influence of ultrashort pulses of electromagnetic radiation on parameters of metal-insulator-semiconductor structures

2004 ◽  
Vol 38 (12) ◽  
pp. 1390-1393
Author(s):  
V. A. Terekhov ◽  
A. N. Man’ko ◽  
E. N. Bormontov ◽  
V. N. Levchenko ◽  
S. Yu. Trebunskikh ◽  
...  
Keyword(s):  
Electromagnetic Radiation ◽  
Ultrashort Pulses ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures
Sign in / Sign up

Export Citation Format

Share Document