X-ray Bragg reflexion from perfect crystals – dependence on geometrical factors with particular regard to the zero-level-of-interaction limit

The variation of X-ray Bragg reflexion properties of centro-symmetric perfect crystals (both absorbing and non-absorbing) with thickness and degree of asymmetry of the reflexion is explored systematically by direct numerical evaluation of the dynamical theory. In particular, it is shown that well-defined universal limits exist where the integrated reflectivity of a perfect crystal (i. e. dynamical theory) approaches asymptotically that for an ideally imperfect crystal (i. e. kinematical approximation) of the same material under the same diffraction conditions. That is, in these limits the level of extinction goes to zero with zero gradient when plotted against an appropriate parameter. The first case occurs when the crystal thickness tends to zero, while the second case occurs when the degree of asymmetry tends toward the asymmetric limits. In each case it is shown that the level of interaction , as indicated for example by the maximum reflectivity, also goes to zero. If absorption is small it is found that the integrated reflectivity for a finite crystal can exceed that for the corresponding semi-infinite crystal, a particular example being the difference between the Ewald and Darwin results which occur for zero and negligible absorption respectively. If absorption and anomalous dispersion are both large, then for some range of parameter values the integrated reflectivity for a perfect crystal can exceed that for an ideally mosaic crystal leading to the phenomenon of negative extinction . A cautionary message arising from the present investigations relates to the dubious practical value of theoretical results for variation of diffraction properties with asymmetry, when these are based on the assumption of zero absorption.

2020 ◽  
Vol 235 (11) ◽  
pp. 523-531
Author(s):  
Diego Felix Dias ◽  
José Marcos Sasaki

AbstractIn this work, the limit of application of the kinematical theory of X-ray diffraction was calculate integrated intensities was evaluated as a function of perfect crystal thickness, when compared with the Ewald–Laue dynamical theory. The percentual difference between the dynamical and kinematical integrated intensities was calculated as a function of unit cell volume, Bragg angle, wavelength, module, and phase of structure factor and linear absorption coefficient. A critical thickness was defined to be the value for which the intensities differ 5%. We show that this critical thickness is 13.7% of the extinction length, which a specific combination of the parameters mentioned before. Also, we find a general expression, for any percentage of the difference between both theories, to determine the validity of the application of the kinematical theory. Finally, we also showed that the linear absorption decreases this critical thickness.


1998 ◽  
Vol 5 (3) ◽  
pp. 967-968 ◽  
Author(s):  
Keiichi Hirano ◽  
Atsushi Momose

The phase shift of forward-diffracted X-rays by a perfect crystal is discussed on the basis of the dynamical theory of X-ray diffraction. By means of a triple Laue-case X-ray interferometer, the phase shift of forward-diffracted X-rays by a silicon crystal in the Bragg geometry was investigated.


1993 ◽  
Vol 324 ◽  
Author(s):  
Victor S. Wang ◽  
Richard J. Matyi ◽  
Karen J. Nordheden

AbstractTriple crystal x-ray diffraction (TCXD) is a non-destructive structural characterization tool capable of the separation and direct observation of the dynamic (perfect crystal) and the kinematic (imperfect crystal) components of the total intensity diffracted by a crystal. Specifically, TCXD can be used to measure the magnitude of the diffuse scattering arising from defects in the crystal structure in the immediate vicinity of a reciprocal lattice point. In this study, the effects of BC13 reactive ion etching (RIE) on the near-surface region of GaAs were investigated by analyzing the changes in the diffuse scattering using both the symmetric 004 reflection as well as the highly asymmetric and more surface sensitive 113 reflection. While the results from the 004 reflections revealed little difference between the unetched and the BC13-etched samples, maps of the diffracted intensity around the 113 reflections showed an unexpected and reproducible decrease in the extent of the diffuse scattering in the transverse direction (perpendicular to the < 113 > direction) as the RIE bias voltage was increased. This decrease suggests that the degree of etch damage induced in the GaAs near-surface region is reduced with increasing bias voltage and ion energy. Additionally, the symmetry and orientation of the kinematic scattering was altered. Possible mechanisms for these results willbe discussed.


The concept of “Standing Waves” (SW) that arise in the crystal dynamically “attacked” by the frequency fields X is analytically analyzed towards expressing, in almost all the cases, the total intensity of the fields on dispersion branches in the perfect crystal and for the embedded layer on the imperfect crystal using various extensions of the semi-classical dynamic theory, adapted or reparameterized, depending on the specific conditions of analysis performed.


1999 ◽  
Vol 55 (3) ◽  
pp. 413-422 ◽  
Author(s):  
Michael Ohler ◽  
Jürgen Härtwig

The theory of moiré fringes on X-ray diffraction topographs of bicrystals is derived from the dynamical theory of X-ray diffraction for the reflection (Bragg) and the transmission (Laue) case. The influence on the moiré fringes of the diffraction geometry, of the geometry of the sample, of its optical properties and of the topographic method is investigated. The perfect-crystal theory is also expanded to weakly deformed bicrystals.


A detailed electron distribution study of the covalent bond in silicon is discussed. The study is based on the strategy employed earlier to define the covalent bond in diamond, and estimates of the bonded-atom scattering power, including results for 222, that have been obtained in three different X -ray experiments at room temperature are considered. Two of these involve the conventional approach via intensity measurement, that of Gottlicher & Wolfel (G. W. ) on powders and that of DeMarco & Weiss (D. M. W. ) on perfect single crystals, while the third by Hattori, Kuriyama, Katagaw a & Kato (H. K. K. K. ) involves the measurement of spacing in X -ray Pendellösung fringes observed in wedge-shaped perfect crystal specimens and their interpretation by the dynamical theory of Kato. It is shown that only the results obtained by H. K. K. K. are capable of detailed analysis in term s of the criteria now available from the earlier study of diamond, from which we conclude that the fringe-spacing method has yielded data for the low-angle reflexions which are superior to the data obtained m re conventionally by G. W. and D. M. W. The covalent bond in silicon is described comprehensively by two non-spherical components as in diamond. The major (antisymmetric) component involves the radial function F 3 ( r ) = 1⋅11 r 2 exp (─ 0⋅88 r 2 ), and the minor (cubo-centrosymmetric) the function G 4 ( r ) = ─ 0⋅32 1 r 2 exp (─0⋅88 r 2 ). The origin of these components lies in an electron redistribution of the spherical unbonded atom involving 0⋅127 electron per bond, and this leads to a peak of + 0⋅25 e/Å 3 at the mid-point of the covalent bond. The consequences of this study are considered in relation to future attempts to examine aspects of electron distribution in atoms of different weight. The suitability of diamond and silicon as standards for scaling intensity data to the strict absolute basis so essential to such studies is also noted.


1989 ◽  
Vol 03 (04) ◽  
pp. 319-323
Author(s):  
S.S. JIANG ◽  
Y. QIU

The modulation in Pendellösung fringe visibility in perfect crystal is due to the interference between σ and π polarization states of X-ray wave. It is simulated by superposition of two polarization states by computer based on spherical X-ray wave dynamical theory and compared with fringe pattern on X-ray diffraction section topograph. It is found that the agreement between experimental result and theoretical calculation is satisfactory.


Author(s):  
Marcus H. Mendenhall ◽  
David Black ◽  
Donald Windover ◽  
James P. Cline

The difference in the diffracted intensity of the σ- and π-polarized components of an X-ray beam in powder diffraction has generally been treated according to equations based on dipole scattering, also known as kinematic X-ray scattering. Although this treatment is correct for powders and post-sample analyzers known to be of high mosaicity, it does not apply to systems configured with nearly perfect crystal incident-beam monochromators. Equations are presented for the polarization effect, based on dynamical diffraction theory applied to the monochromator crystal. The intensity of the π component relative to the σ component then becomes approximately proportional to |cos  2θm| rather than to cos22θm, where θm is the Bragg diffraction angle of the monochromator crystal. This changes the predicted intensities of X-ray powder diffraction patterns produced on instruments with incident-beam monochromators, especially in the regions far from 2θ = 90° in the powder pattern. Experimental data, based on well known standard reference materials, are presented, confirming that the dynamical polarization correction is required when a Ge 111 incident-beam monochromator is used. The dynamical correction is absent as an option in the Rietveld analysis codes with which the authors are familiar.


1973 ◽  
Vol 28 (5) ◽  
pp. 622-626
Author(s):  
Masao Kuriyama

The ray theory of Kato and Kambe for imperfect crystals is derived in a formal way from a general dynamical theory of diffraction. This development together with the results from a previous paper concerning Takagi's equation (the wave theory) helps to clarify the meaning and limits of various phenomenological theories that have been extended to an imperfect crystal from the dynamical diffraction theory for a perfect crystal.


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