Low-Frequency Optical-Phonon Spectrum of Benzil

1969 ◽  
Vol 187 (3) ◽  
pp. 1128-1131 ◽  
Author(s):  
R. Claus ◽  
H. H. Hacker ◽  
H. W. Schrötter ◽  
J. Brandmüller ◽  
S. Haussühl
1978 ◽  
Vol 39 (C6) ◽  
pp. C6-1037-C6-1038
Author(s):  
V.M. Pan ◽  
B.G. Nikitin ◽  
A.M. Korostil ◽  
V.V. Nemoshkalenko ◽  
V.P. Dovgopol ◽  
...  

2017 ◽  
Vol 111 (20) ◽  
pp. 201903 ◽  
Author(s):  
Daming Zhao ◽  
Jonathan M. Skelton ◽  
Hongwei Hu ◽  
Chan La-o-vorakiat ◽  
Jian-Xin Zhu ◽  
...  

1993 ◽  
Vol 07 (06n07) ◽  
pp. 1505-1525 ◽  
Author(s):  
J. LOS ◽  
T. JANSSEN ◽  
F. GÄHLER

A study of the phonon spectrum of the octagonal tiling is presented, by calculating and analysing the properties of the spectrum of perfect and randomized commensurate approximants with unit cells containing up to 8119 vertices. The total density of states, obtained by numerical integration over the Brillouin zone, exhibits much structure, and in the low frequency range of the spectrum there is deviation from the normal linear behaviour in the form of pseudogaps. For randomized approximants these pseudogaps disappear and the density of states is globally smoothened. It turns out that the widths of the gaps in the dispersion vanish in the low frequency limit. Therefore the scaling behaviour of the lowest branches tends to the behaviour of an absolutely continuous spectrum, which is not the case at higher frequencies. As an application, the vibrational specific heat of the different tiling models is calculated and compared to the specific heat of a square lattice and of a Debye model.


2020 ◽  
Vol 11 (33) ◽  
pp. 8989-8998
Author(s):  
Takaya Yoshida ◽  
Koji Nakabayashi ◽  
Hiroko Tokoro ◽  
Marie Yoshikiyo ◽  
Asuka Namai ◽  
...  

Extremely low-frequency optical phonon mode in Rb-intercalated two-dimensional cyanide-bridged Co–W bimetal assembly and its temperature- and photo-induced switching effect.


1997 ◽  
Vol 482 ◽  
Author(s):  
T. F. Forbang ◽  
C. R. McIntyre

AbstractWe have studied the effects on the phonon spectrum and on the electron-longitudinal optical phonon scattering in GaN/AlN and GaAs/AlAs quantum wells. Phonon modes and potentials have been calculated for both systems. Results for emission due to electroninterface phonons interactions are presented. We will discuss the implications for relaxation times and electron mobility due to modified LO-phonon scattering in both systems.


2001 ◽  
Vol 65 (2) ◽  
Author(s):  
P. Postorino ◽  
A. Congeduti ◽  
P. Dore ◽  
A. Nucara ◽  
A. Bianconi ◽  
...  

2000 ◽  
Vol 14 (07) ◽  
pp. 751-760 ◽  
Author(s):  
F. V. GASPARYAN ◽  
S. V. MELKONYAN ◽  
V. M. AROUTIOUNYAN ◽  
H. V. ASRIYAN

The low-frequency noise spectral density with the 1/f spectrum for homopolar and heteropolar semi-conductors is theoretically obtained taking into account conduction electron–optical phonon interactions. The analytical expressions of the spectral density and Hooge's α H parameter are presented. The analytical temperature dependence of Hooge's parameter is compared with experimental data for n-Si and n-GaAs.


1972 ◽  
Vol 53 (2) ◽  
pp. 577-585 ◽  
Author(s):  
A. d'Andrea ◽  
B. Fornari ◽  
G. Mattei ◽  
M. Pagannone ◽  
M. Scrocco

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