1/f NOISES OF HOMOPOLAR AND HETEROPOLAR SEMICONDUCTORS
2000 ◽
Vol 14
(07)
◽
pp. 751-760
◽
Keyword(s):
The low-frequency noise spectral density with the 1/f spectrum for homopolar and heteropolar semi-conductors is theoretically obtained taking into account conduction electron–optical phonon interactions. The analytical expressions of the spectral density and Hooge's α H parameter are presented. The analytical temperature dependence of Hooge's parameter is compared with experimental data for n-Si and n-GaAs.
Keyword(s):
2017 ◽
Vol 12
(2)
◽
pp. 62-70
Keyword(s):
2011 ◽
Vol 20
(01)
◽
pp. 161-170
◽
2002 ◽
Vol 25
(2)
◽
pp. 161-167
◽
1995 ◽
Vol 42
(8)
◽
pp. 1467-1472
◽
Keyword(s):
2011 ◽
Vol 324
◽
pp. 441-444
◽
Keyword(s):
2000 ◽
Vol 47
(5)
◽
pp. 1107-1112
◽
Keyword(s):