(La,Ba)SnO3 -based Thin-Film Transistors: Large-Signal Model and Scaling Projections

2022 ◽  
Vol 17 (1) ◽  
Author(s):  
Fabrizio Mazziotti ◽  
Demetrio Logoteta ◽  
Giuseppe Iannaccone
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Large Signal ◽  
Signal Model

CHARGE BEHAVIOR IN ORGANIC THIN FILM TRANSISTORS

2011 ◽  
Vol 20 (04) ◽  
pp. 727-748
Author(s):  
ALEJANDRA CASTRO-CARRANZA ◽  
BENJAMIN IÑIGUEZ ◽  
JOSEP PALLARÈS
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Current Model ◽  
Organic Thin Film Transistors ◽  
Localized States ◽  
Small Signal ◽  
Organic Thin Film ◽  
Signal Model ◽  
Small Signal Model ◽  
Charge Model

In this work, we review the physical properties of organic materials and transistors, discussing especially the charge transport mechanisms. Finally, we present an analytical and continuous charge model for Organic Thin Film Transistors (OTFTs) from which analytical expressions of all the total capacitances are obtained. They are developed and finally written as continuous explicit functions of the applied voltage, resulting in a complete charge-based small-signal model composed by a unified charge control model derived from Poisson equation assuming an exponential density of localized states. This charge model was developed from a previously proposed analytical DC current model assuming a hopping based transport. Therefore our complete small signal model has the potential to be successfully used in circuit simulators for the design of OTFTs.

A Large-Signal Model of Ferroelectric Thin-Film Transmission Lines

2011 ◽  
Vol 59 (12) ◽  
pp. 3059-3067 ◽  
Author(s):  
Eduard Rocas ◽  
Carlos Collado ◽  
Jordi Mateu ◽  
Nathan Orloff ◽  
Juan M. O'Callaghan ◽  
...  
Keyword(s):  
Thin Film ◽  
Transmission Lines ◽  
Ferroelectric Thin Film ◽  
Large Signal ◽  
Signal Model

A charge-based large-signal model for thin-film SOI MOSFET's

1985 ◽  
Vol 32 (2) ◽  
pp. 446-457 ◽  
Author(s):  
Hyung Kyu Lim ◽  
J.G. Fossum
Keyword(s):  
Thin Film ◽  
Large Signal ◽  
Signal Model ◽  
A Charge

A Charge-Based Large-Signal Model for Thin-Film SOI MOSFET's

1985 ◽  
Vol 20 (1) ◽  
pp. 366-377 ◽  
Author(s):  
Hyung Kyu Lim ◽  
J.G. Fossum
Keyword(s):  
Thin Film ◽  
Large Signal ◽  
Signal Model ◽  
A Charge

(Invited) Non Quasi Static Modeling of Printed Organic Thin Film Transistors in Large Signal and Small Signal Operation

2021 ◽  
Vol MA2021-01 (32) ◽  
pp. 1063-1063
Author(s):  
Antonio Valletta ◽  
Sabrina Calvi ◽  
Matteo Rapisarda ◽  
Guglielmo Fortunato ◽  
Andrea Fabbri ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Small Signal ◽  
Organic Thin Film ◽  
Large Signal ◽  
Static Modeling

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

A Proposal of High Performance Organic Thin Film Transistors

2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Ph Sensors ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Effect of Illumination on Organic Polymer Thin-Film Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Charge Carriers ◽  
Electrical Performance ◽  
Organic Polymer ◽  
Light Illumination ◽  
Polymer Thin Film ◽  
Channel Region ◽  
White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

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