Solvent-Free Toner Printing of Organic Semiconductor Layer in Flexible Thin-Film Transistors

AbstractOrganic Thin-Film Transistors (OTFTs) in top-contact configuration and Metal-Insulator-Semiconductor (MIS) structures with different organic dielectrics as the gate insulator have been fabricated using the same organic semiconductor layer, pentacene, in order to investigate the changes in the electrical behavior by varying the interface properties. A gold bottom gate electrode was sputtered on a glass substrate whereas gold source and drain were thermally evaporated onto the pentacene layer. Several organic dielectrics have been tested as insulating layers, namely were poly(vinyl alcohol) (PVA), polyvinyl alcohol with ammonium dichromate (PVAad) as a cross-linking agent, poly (4-vinyl phenol) (PVP), poly(dimethylsiloxane) (PDMS) and poly(methylsilsesquioxane) (pMSSQ). The interesting differences found out by varying the interface confirm that the chemical-physical interaction between semiconductor and dielectric is crucial for the conduction mechanisms of the charge carriers. In particular we observed that the electron traps can influence not only the electron transport, therefore allowing a more or less marked ambipolar behavior, but also affect the hole transport.

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Study on Reducing the Energy Barrier Between an Electrode and an Organic Semiconductor by Using Inorganic Semiconductor Layer in Organic Thin Film Transistors

Journal of the Korean Physical Society ◽

10.3938/jkps.50.915 ◽

2007 ◽

Vol 50 (3) ◽

pp. 915 ◽

Cited By ~ 3

Author(s):

Seung Hyun Jee ◽

Soo Ho Kim ◽

Kwang Hoon Lee ◽

Jae Hwan Ko ◽

Young Soo Yoon

Keyword(s):

Thin Film ◽

Organic Semiconductor ◽

Thin Film Transistors ◽

Energy Barrier ◽

Organic Thin Film Transistors ◽

Semiconductor Layer ◽

Organic Thin Film ◽

Inorganic Semiconductor

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1,4-bis(5-decyl-2,2′-bithien-5-yl)benzene as new stable organic semiconductor for high performance thin film transistors

Synthetic Metals ◽

10.1016/j.synthmet.2005.01.007 ◽

2005 ◽

Vol 149 (2-3) ◽

pp. 231-235 ◽

Cited By ~ 19

Author(s):

Sergei A. Ponomarenko ◽

Stephan Kirchmeyer ◽

Marcus Halik ◽

Hagen Klauk ◽

Ute Zschieschang ◽

...

Keyword(s):

Thin Film ◽

Organic Semiconductor ◽

Thin Film Transistors ◽

High Performance

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Field-dependent charge transport in organic thin-film transistors: Impact of device structure and organic semiconductor microstructure

Applied Physics Letters ◽

10.1063/1.5099388 ◽

2019 ◽

Vol 115 (7) ◽

pp. 073301 ◽

Cited By ~ 3

Author(s):

Sajant Anand ◽

Katelyn P. Goetz ◽

Zachary A. Lamport ◽

Andrew M. Zeidell ◽

Oana D. Jurchescu

Keyword(s):

Thin Film ◽

Charge Transport ◽

Organic Semiconductor ◽

Thin Film Transistors ◽

Organic Thin Film Transistors ◽

Organic Thin Film ◽

Device Structure ◽

Field Dependent

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Instability of OTFT with Organic Gate Dielectrics

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.407 ◽

2007 ◽

Vol 124-126 ◽

pp. 407-410

Author(s):

Sang Chul Lim ◽

Seong Hyun Kim ◽

Gi Heon Kim ◽

Jae Bon Koo ◽

Jung Hun Lee ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Field Effect ◽

Gate Dielectrics ◽

Gate Insulator ◽

Semiconductor Layer ◽

Field Effect Mobility ◽

Current Ratio ◽

Dielectric Thickness ◽

Inverter Circuit

We report the effects of instability with gate dielectrics of pentacene thin film transistors (OTFTs) inverter circuits. We used to the UV sensitive curable resin and poly-4-vinylphenol(PVP) by gate dielectrics. The inverter supply bias is VDD= -40 V. For a given dielectric thickness and applied voltage, pentacene OTFTs with inverter circuits measurements field effect mobility, on-off current ratio, Vth. The field effect mobility 0.03~0.07 cm2/Vs, and the threshold voltage is -3.3 V ~ -8.8 V. The on- and off-state currents ratio is about 103~106. From the OTFT device and inverter circuit measurement, we observed hysteresis behavior was caused by interface states of between the gate insulator and the pentacene semiconductor layer.

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Investigating post-deposition semiconductor dewetting and fabrication of ultra-thin organic semiconductor thin-film transistors (Conference Presentation)

Organic and Hybrid Field-Effect Transistors XVIII ◽

10.1117/12.2530908 ◽

2019 ◽

Author(s):

Rachana Acharya ◽

Tobias Breuer ◽

Darius Guender ◽

Gregor Witte ◽

Guido Schmitz ◽

...

Keyword(s):

Thin Film ◽

Organic Semiconductor ◽

Thin Film Transistors ◽

Semiconductor Thin Film ◽

Post Deposition ◽

Organic Semiconductor Thin Film

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Inkjet-Printed Top-Gate Thin-Film Transistors Based on InGaSnO Semiconductor Layer with Improved Etching Resistance

Coatings ◽

10.3390/coatings10040425 ◽

2020 ◽

Vol 10 (4) ◽

pp. 425 ◽

Cited By ~ 1

Author(s):

Siting Chen ◽

Yuzhi Li ◽

Yilong Lin ◽

Penghui He ◽

Teng Long ◽

...

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Dielectric Layer ◽

Thin Film Transistors ◽

Gate Dielectric ◽

Acid Resistance ◽

Semiconductor Layer ◽

Sn Doping ◽

First Time

Inkjet-printed top-gate metal oxide (MO) thin-film transistors (TFTs) with InGaSnO semiconductor layer and carbon-free aqueous gate dielectric ink are demonstrated. It is found that the InGaO semiconductor layer without Sn doping is seriously damaged after printing aqueous gate dielectric ink onto it. By doping Sn into InGaO, the acid resistance is enhanced. As a result, the printed InGaSnO semiconductor layer is almost not affected during printing the following gate dielectric layer. The TFTs based on the InGaSnO semiconductor layer exhibit higher mobility, less hysteresis, and better stability compared to those based on InGaO semiconductor layer. To the best of our knowledge, it is for the first time to investigate the interface chemical corrosivity of inkjet-printed MO-TFTs. It paves a way to overcome the solvent etching problems for the printed TFTs.

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