Kinetics of CuPt-type ordered phase formation in III-V semiconductor alloys during (001) epitaxial growth due to step flow

AbstractThe epitaxial growth kinetics of Co on Cu(100) are investigated with a kinetic solid-on-solid model. Two effects are found to dominate the growth of this system reflecting the difference in surface free energies betweenthe two materials: the difference of diffusion parameters, and the inability of Co to wet Cu(100) at lower temperatures.

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Understanding the phase formation kinetics of nano-crystalline kesterite deposited on mesoscopic scaffolds via in situ multi-wavelength Raman-monitored annealing

Physical Chemistry Chemical Physics ◽

10.1039/c6cp05759d ◽

2016 ◽

Vol 18 (42) ◽

pp. 29435-29446 ◽

Cited By ~ 9

Author(s):

Zhuoran Wang ◽

Samir Elouatik ◽

George P. Demopoulos

Keyword(s):

Real Time ◽

Phase Formation ◽

Formation Kinetics ◽

Nano Crystalline ◽

Multi Wavelength ◽

Real Time Information ◽

Kinetics Of ◽

Time Information ◽

Annealing Method

The in situ Raman monitored annealing method is developed in this work to provide real-time information on phase formation and crystallinity evolution of kesterite deposited on a TiO2 mesoscopic scaffold.

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Decomposition kinetics of III–V materials used for MOCVD epitaxial growth

Journal of Crystal Growth ◽

10.1016/0022-0248(90)90536-t ◽

1990 ◽

Vol 99 (1-4) ◽

pp. 319-323 ◽

Cited By ~ 2

Author(s):

I. Matsui ◽

A. Ishihata ◽

T. Ohmine

Keyword(s):

Epitaxial Growth ◽

Decomposition Kinetics ◽

Materials Used ◽

Kinetics Of

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A Powder Diffractometry Study of γ'-Phase Formation

Powder Diffraction ◽

10.1017/s0885715600017012 ◽

1991 ◽

Vol 6 (2) ◽

pp. 66-69

Author(s):

S. Ariely ◽

G. Kimmel ◽

S. F. Dirnfeld ◽

M. Bamberger ◽

B. Prinz

Keyword(s):

Phase Formation ◽

Early Stage ◽

Pure Nickel ◽

X Ray Diffraction ◽

Type Alloy ◽

Optimal Program ◽

X Ray ◽

Nickel Base ◽

Kinetics Of ◽

Base Superalloy

AbstractThe kinetics of γ'-phase formation in a Ni-base superalloy were studied. The data (pairs of cps and 2θ) were processed by the deconvolution program (Wiedemann, Unnam and Clark, 1987), which was rewritten in FORTRAN and installed on an IBM/VM and a VAX/VMS host computer. Optimal program parameters were found. Pure nickel was used as a standard. The only evidence obtained from the raw data is that the early stage of the aging process is accompanied by broadening. Deconvolution resolved the peaks into three kinds of diffraction lines: Ni(γ), precipitate (γ'), and undefined lines which have been interpreted as satellites. The results show that our X-ray diffraction lines are composed of the main diffraction lines of nickel-base A1 type alloy and additive satellites. In an advanced stage of aging the satellites assume the typical diffraction pattern of γ' phase.

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Kinetics of Ge Segregation in the Presence of Sb During Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-220-217 ◽

1991 ◽

Vol 220 ◽

Cited By ~ 12

Author(s):

S. Fukatsu ◽

K. Fujita ◽

H. Yaguchi ◽

Y. Shiraki ◽

R. Ito

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Lower Limit ◽

Molecular Beam ◽

Growth Direction ◽

High Concentration ◽

Mbe Growth ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth ◽

Kinetics Of

Kinetics of Ge segregation during molecular beam epitaxial growth is described. It is shown that the Ge segregation is self-limited in Si epitaxial overlayers due to a high concentration effect when the Ge concentration exceeds 0.01 monolayer (ML). As a result, segregation profiles of Ge are found to decay non-exponentially in the growth direction. This unusual Ge segregation was found to be suppressed with an adlayer of strong segregant, Sb, during the kinetic MBE growth. We develop a novel scheme to realize sharp Si/Ge interfaces with strong segregante. Lower limit of the effective amount of Sb for this was found to be 0.75 ML.

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A Model for Formation and Consumption of Transient Phase

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.172-174.646 ◽

2011 ◽

Vol 172-174 ◽

pp. 646-651 ◽

Cited By ~ 2

Author(s):

Gamra Tellouche ◽

Khalid Hoummada ◽

Dominique Mangelinck ◽

Ivan Blum

Keyword(s):

Differential Scanning Calorimetry ◽

Phase Formation ◽

Transient Phase ◽

X Ray Diffraction ◽

Scanning Calorimetry ◽

X Ray ◽

Proposed Model ◽

Transient Phases ◽

Kinetics Of

The phase formation sequence of Ni silicide for different thicknesses is studied by in situ X ray diffraction and differential scanning calorimetry measurements. The formation of a transient phase is observed during the formation of δ-Ni2Si; transient phases grow and disappear during the growth of another phase. A possible mechanism is proposed for the transient phase formation and consumption. It is applied to the growth and consumption of θ-Ni2Si. A good accordance is found between the proposed model and in situ measurement of the kinetics of phase formation obtained by x-ray diffraction and differential scanning calorimetry for higher thickness.

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