Ab initio molecular-orbital study on the surface reactions of methane and silane plasma chemical vapor deposition

Kota Sato; Hitoshi Haruta; Yukinobu Kumashiro

doi:10.1103/physrevb.55.15467

Ab initio molecular-orbital study on the surface reactions of methane and silane plasma chemical vapor deposition

Physical Review B ◽

10.1103/physrevb.55.15467 ◽

1997 ◽

Vol 55 (23) ◽

pp. 15467-15470 ◽

Cited By ~ 6

Author(s):

Kota Sato ◽

Hitoshi Haruta ◽

Yukinobu Kumashiro

Keyword(s):

Chemical Vapor Deposition ◽

Ab Initio ◽

Molecular Orbital ◽

Vapor Deposition ◽

Surface Reactions ◽

Chemical Vapor ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Molecular Orbital Study ◽

Silane Plasma

Plasma-chemical vapor deposition of wide band gap a-SiC:H films: An ab initio molecular-orbital study

Journal of Applied Physics ◽

10.1063/1.372450 ◽

2000 ◽

Vol 87 (8) ◽

pp. 4031-4035 ◽

Cited By ~ 4

Author(s):

Shih-Hung Cheng ◽

Kota Sato ◽

Yukinobu Kumashiro

Keyword(s):

Chemical Vapor Deposition ◽

Ab Initio ◽

Band Gap ◽

Vapor Deposition ◽

Chemical Vapor ◽

Wide Band ◽

Plasma Chemical ◽

Wide Band Gap ◽

Plasma Chemical Vapor Deposition ◽

Molecular Orbital Study

Structures and Energetics of Some Potential Intermediates in Titanium Nitride Chemical Vapor Deposition: TiClm(NH2)n, TiClm(NH2)nNH, and TiClm(NH2)nN. An ab Initio Molecular Orbital Study

The Journal of Physical Chemistry B ◽

10.1021/jp9810668 ◽

1998 ◽

Vol 102 (26) ◽

pp. 5152-5157 ◽

Cited By ~ 10

Author(s):

Anwar G. Baboul ◽

H. Bernhard Schlegel

Keyword(s):

Chemical Vapor Deposition ◽

Titanium Nitride ◽

Ab Initio ◽

Molecular Orbital ◽

Vapor Deposition ◽

Chemical Vapor ◽

Molecular Orbital Study ◽

Orbital Study

Modeling of the Evolutions of Negative Ions in Silane Plasma Chemical Vapor Deposition for Various Process Conditions

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.4989 ◽

1997 ◽

Vol 36 (Part 1, No. 7B) ◽

pp. 4989-4996 ◽

Cited By ~ 13

Author(s):

Dong-Joo Kim ◽

Kyo-Seon Kim

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Negative Ions ◽

Process Conditions ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Silane Plasma

Ab InitioMolecular Orbital Study on Acceleration Mechanism of Silane Plasma Chemical Vapor Deposition by Diborane

Applied Physics Express ◽

10.1143/apex.4.056202 ◽

2011 ◽

Vol 4 (5) ◽

pp. 056202 ◽

Cited By ~ 2

Author(s):

Kota Sato ◽

Yasuyo Kubota

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Acceleration Mechanism ◽

Orbital Study ◽

Silane Plasma

ChemInform Abstract: Structures and Energetics of Some Potential Intermediates in Titanium Nitride Chemical Vapor Deposition: TiClm(NH2)n, TiClm(NH2)nNH, and TiClm(NH2)nN. An ab initio Molecular Orbital Study.

ChemInform ◽

10.1002/chin.199837001 ◽

2010 ◽

Vol 29 (37) ◽

pp. no-no

Author(s):

A. G. BABOUL ◽

H. B. SCHLEGEL

Keyword(s):

Chemical Vapor Deposition ◽

Titanium Nitride ◽

Ab Initio ◽

Molecular Orbital ◽

Vapor Deposition ◽

Chemical Vapor ◽

Molecular Orbital Study ◽

Orbital Study

Structures of the main precursors and initial decomposition products of diborane chemical vapor deposition: an experimental and ab initio molecular orbital study

Chemical Physics Letters ◽

10.1016/s0009-2614(00)00630-8 ◽

2000 ◽

Vol 325 (4) ◽

pp. 453-456 ◽

Cited By ~ 9

Author(s):

Kota Sato ◽

Noriyoshi Kanda ◽

Takashige Ogata ◽

Yukinobu Kumashiro

Keyword(s):

Chemical Vapor Deposition ◽

Ab Initio ◽

Molecular Orbital ◽

Vapor Deposition ◽

Chemical Vapor ◽

Decomposition Products ◽

Molecular Orbital Study ◽

Orbital Study

Ab initio Molecular Orbital Study on Hydrogen Radical Addition Reactions to Graphite Surface and Subsequent Initial Surface Process in Silane Plasma Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.7478 ◽

2003 ◽

Vol 42 (Part 1, No. 12) ◽

pp. 7478-7481 ◽

Cited By ~ 2

Author(s):

Kota Sato ◽

Eiji Shinagawa ◽

Kenji Nakajima ◽

Kaori Miyazaki ◽

Hideomi Koinuma

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

Radical Addition ◽

Addition Reactions ◽

Initial Surface ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Molecular Orbital Study ◽

Hydrogen Radical ◽

Silane Plasma

Control of silicon particle behavior using a low frequency electromagnetic field in silane plasma chemical vapor deposition

Thin Solid Films ◽

10.1016/s0040-6090(98)01521-1 ◽

1999 ◽

Vol 341 (1-2) ◽

pp. 59-62 ◽

Cited By ~ 3

Author(s):

Sung-Chae Yang ◽

Hiroshi Fujiyama

Keyword(s):

Electromagnetic Field ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Silicon Particle ◽

Low Frequency ◽

Chemical Vapor ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Particle Behavior ◽

Silane Plasma

Remote hydrogen plasma chemical vapor deposition from alkylsilane and alkylcarbosilane single-sources: Mechanism of the process and properties of resulting silicon-carbon deposits

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:2001388 ◽

2001 ◽

Vol 11 (PR3) ◽

pp. Pr3-691-Pr3-702

Author(s):

A. M. Wrobel

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Hydrogen Plasma ◽

Chemical Vapor ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Carbon Deposits ◽

Silicon Carbon

HIGH RATE DEPOSITION OF HYDROGENATED AMORPHOUS SILICON USING MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION PROCESS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1989578 ◽

1989 ◽

Vol 50 (C5) ◽

pp. C5-667-C5-672

Author(s):

DING-KUN PENG ◽

CHUN-LIN WANG ◽

GUANG-YAO MENG

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Microwave Plasma ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Deposition Process ◽

High Rate ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Hydrogenated Amorphous