Electron transport in quantum dot solids: Monte Carlo simulations of the effects of shell filling, Coulomb repulsions, and site disorder

2007 ◽  
Vol 75 (8) ◽  
Author(s):  
R. E. Chandler ◽  
A. J. Houtepen ◽  
J. Nelson ◽  
D. Vanmaekelbergh
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Quantum Dot ◽  
Monte Carlo Simulations ◽  
Site Disorder

scholarly journals Monte Carlo simulations of electron transport in 4H-SiC using the DFT-calculated density of states

2021 ◽  
Author(s):  
Janusz Wozny ◽  
Andrii Kovalchuk ◽  
Zbigniew Lisik ◽  
Jacek Podgorski ◽  
Piotr Bugalski ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Electric Fields ◽  
Density Of States ◽  
Electron Mobility ◽  
Crucial Issue ◽  
Calculated Density ◽  
Correct Calculation

AbstractWe carry out Monte Carlo simulations of electron transport in 4H-silicon carbide (4H-SiC) based on the numerically calculated density of states (DOS) to obtain the electron mobility at low electric fields. From the results, it can be concluded that a correct calculation of the DOS requires a very dense wavevector k-mesh when low electron kinetic energies are considered. The crucial issue is the numerical efficiency of the DOS calculation. We investigate the scaling efficiency when different numbers of cores are used.

The electron transport that occurs within wurtzite zinc oxide and the application of stress

MRS Advances ◽  
2017 ◽  
Vol 2 (48) ◽  
pp. 2627-2632 ◽  
Author(s):  
Poppy Siddiqua ◽  
Michael S. Shur ◽  
Stephen K. O’Leary
Keyword(s):  
Monte Carlo ◽  
Zinc Oxide ◽  
Electron Transport ◽  
Velocity Field ◽  
Monte Carlo Simulations ◽  
Significant Role ◽  
Energy Gap ◽  
Device Application ◽  
The Impact

ABSTRACTWe examine how stress has the potential to shape the character of the electron transport that occurs within ZnO. In order to narrow the scope of this analysis, we focus on a determination of the velocity-field characteristics associated with bulk wurtzite ZnO. Monte Carlo simulations of the electron transport are pursued for the purposes of this analysis. Rather than focusing on the impact of stress in of itself, instead we focus on the changes that occur to the energy gap through the application of stress, i.e., energy gap variations provide a proxy for the amount of stress. Our results demonstrate that stress plays a significant role in shaping the form of the velocity-field characteristics associated with ZnO. This dependence could potentially be exploited for device application purposes.

Full band Monte Carlo simulations of high-field electron transport in wide band-gap semiconductors

2004 ◽  
Vol 19 (4) ◽  
pp. S206-S208 ◽  
Author(s):  
Niels Fitzer ◽  
Angelika Kuligk ◽  
Ronald Redmer ◽  
Martin Städele ◽  
Stephen M Goodnick ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Band Gap ◽  
High Field ◽  
Wide Band ◽  
Wide Band Gap ◽  
Field Electron ◽  
Full Band ◽  
Wide Band Gap Semiconductors

Formation of three-dimensional quantum-dot superlattices in amorphous systems: Experiments and Monte Carlo simulations

2009 ◽  
Vol 79 (3) ◽  
Author(s):  
M. Buljan ◽  
U. V. Desnica ◽  
M. Ivanda ◽  
N. Radić ◽  
P. Dubček ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Quantum Dot ◽  
Monte Carlo Simulations ◽  
Three Dimensional ◽  
Amorphous Systems

scholarly journals A complete data set for the simulation of electron transport through gaseous tetrahydrofuran in the energy range 1–100 $$\hbox {eV}$$

2021 ◽  
Vol 75 (12) ◽  
Author(s):  
A. García-Abenza ◽  
A. I. Lozano ◽  
L. Álvarez ◽  
J. C. Oller ◽  
F. Blanco ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Energy Range ◽  
Cross Sections ◽  
Gas Cell ◽  
Data Set ◽  
Total Electron ◽  
Magnetically Confined ◽  
Scattering Cross Sections

Abstract A self-consistent data set, with all the necessary inputs for Monte Carlo simulations of electron transport through gaseous tetrahydrofuran (THF) in the energy range 1–100 eV, has been critically compiled in this study. Accurate measurements of total electron scattering cross sections (TCSs) from THF have been obtained, and considered as reference values to validate the self-consistency of the proposed data set. Monte Carlo simulations of the magnetically confined electron transport through a gas cell containing THF for different beam energies (3, 10 and 70 eV) and pressures (2.5 and 5.0 mTorr) have also been performed by using a novel code developed in Madrid. In order to probe the accuracy of the proposed data set, the simulated results have been compared with the corresponding experimental data, the latter obtained with the same experimental configuration where the TCSs have been measured. Graphic Abstract

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