Anisotropic spin transport in two-terminal mesoscopic rings: Rashba and Dresselhaus spin-orbit interactions

We study spin transport properties in non-magnetic heterostructures in the presence of different spin-orbit interactions. For an unpolarized beam with zero angle of incidence, the transmitted spin-up and spin-down electrons will propagate in the same direction with similar amplitudes and different phases. The two beams will interfere with each other after passing through a certain distance of spin-orbit region. This effect just resembles the interference of polarization of light passing through wave plate. This quantum interference will shed light on quantum information processing and quantum computation.

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REEXAMINATION OF SPIN TRANSPORT THROUGH A DOUBLE-δ MAGNETIC BARRIER WITH SPIN-ORBIT INTERACTIONS

Modern Physics Letters B ◽

10.1142/s0217984909021673 ◽

2009 ◽

Vol 23 (30) ◽

pp. 3631-3642

Author(s):

CAIHUA BI ◽

FENG ZHAI

Keyword(s):

Magnetic Field ◽

Field Strength ◽

Spin Polarization ◽

Energy Region ◽

Spin Transport ◽

Inhomogeneous Magnetic Field ◽

Pure Spin ◽

Spin Orbit ◽

Spin Orbit Interactions ◽

The Magnetic Field

We revisit the properties of spin transport through a semiconductor 2DEG system subjected to the modulation of both a ferromagnetic metal (FM) stripe on top and the Rashba and Dresselhaus spin-orbit interactions (SOIs). The FM stripe has a magnetization along the transporting direction and generates an inhomogeneous magnetic field in the 2DEG plane which is taken as a double-δ shape. It is found that the spin polarization of this system generated from a spin-unpolarized injection can be remarkable only within a low Fermi energy region and is not more than 30% for the parameters available in current experiments. In this energy region, both the magnitude and the orientation of the spin polarization can be tuned by the Rashba strength, the Dresselhaus strength, and the magnetic field strength. The magnetization reversal of the FM stripe cannot result in a change of the conductance, but can rotate the orientation of the spin polarization. The results are in contrast to those in [ J. Phys.: Condens. Matter15 (2003) L31] where a pure spin state for incident electrons is artificially assumed.

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Spin transport in intermediate-energy heavy-ion collisions as a probe of in-medium spin–orbit interactions

Nuclear Physics A ◽

10.1016/j.nuclphysa.2016.06.001 ◽

2016 ◽

Vol 955 ◽

pp. 41-57 ◽

Cited By ~ 6

Author(s):

Yin Xia ◽

Jun Xu ◽

Bao-An Li ◽

Wen-Qing Shen

Keyword(s):

Heavy Ion Collisions ◽

Spin Transport ◽

Heavy Ion ◽

Intermediate Energy ◽

Spin Orbit ◽

Ion Collisions ◽

Spin Orbit Interactions

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Spin transport in a two-dimensional tight-binding system with Rashba and Dresselhaus spin-orbit interactions in the presence of static random disorder

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2020.167711 ◽

2021 ◽

pp. 167711

Author(s):

Hemant Kumar Sharma ◽

Shreekantha Sil ◽

Ashok Chatterjee

Keyword(s):

Spin Transport ◽

Tight Binding ◽

Spin Orbit ◽

Two Dimensional ◽

Binding System ◽

Random Disorder ◽

Spin Orbit Interactions

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Acoustically Induced Spin-Orbit Interactions Revealed by Two-Dimensional Imaging of Spin Transport in GaAs

Physical Review Letters ◽

10.1103/physrevlett.106.216602 ◽

2011 ◽

Vol 106 (21) ◽

Cited By ~ 36

Author(s):

H. Sanada ◽

T. Sogawa ◽

H. Gotoh ◽

K. Onomitsu ◽

M. Kohda ◽

...

Keyword(s):

Spin Transport ◽

Spin Orbit ◽

Two Dimensional ◽

Spin Orbit Interactions

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Spin generation and manipulation based on spin-orbit interaction in semiconductors

10.1093/oso/9780198787075.003.0013 ◽

2017 ◽

Author(s):

J. Nitta

Keyword(s):

Magnetic Field ◽

Orbit Interaction ◽

Degree Of Freedom ◽

Effective Magnetic Field ◽

Spin Orbit ◽

Spin Orbit Interaction ◽

Spin Degree ◽

Dimensional Electron Gas ◽

Spin Orbit Interactions ◽

Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

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Intersystem crossing processes in the 2CzPN emitter: a DFT/MRCI study including vibrational spin–orbit interactions

Physical Chemistry Chemical Physics ◽

10.1039/d0cp06011a ◽

2021 ◽

Vol 23 (5) ◽

pp. 3668-3678

Author(s):

Angela Rodriguez-Serrano ◽

Fabian Dinkelbach ◽

Christel M. Marian

Keyword(s):

Quantum Chemical Calculations ◽

Quantum Chemical ◽

Intersystem Crossing ◽

Spin Orbit ◽

Spin Orbit Interactions

Multireference quantum chemical calculations were performed in order to investigate the (reverse) intersystem crossing ((R)ISC) mechanisms of 4,5-di(9H-carbazol-9-yl)-phthalonitrile (2CzPN).

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