Effect of carrier mobility on magnetothermoelectric transport properties of graphene

Charge-carrier mobility is a determining factor for the transport properties of semiconductor materials, and strongly related to the opto-electronics performance of nanoscale devices. Here, we investigate the electronic properties and...

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Off-stoichiometry effects on the thermoelectric properties of Cu2+δSe (−0.1 ≤ δ ≤ 0.05) compounds synthesized by a high-pressure and high-temperature method

CrystEngComm ◽

10.1039/c9ce01651a ◽

2020 ◽

Vol 22 (4) ◽

pp. 695-700 ◽

Cited By ~ 2

Author(s):

Lisha Xue ◽

Weixia Shen ◽

Zhuangfei Zhang ◽

Manjie Shen ◽

Wenting Ji ◽

...

Keyword(s):

High Pressure ◽

High Temperature ◽

Chemical Composition ◽

Transport Properties ◽

Carrier Concentration ◽

Thermoelectric Properties ◽

Carrier Mobility ◽

Temperature Method

The chemical composition can directly tune the transport properties of Cu2Se liquid-like materials, including the carrier concentration, carrier mobility and superionic feature.

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Widely tunable and anisotropic charge carrier mobility in monolayer tin(ii) selenide using biaxial strain: a first-principles study

Journal of Materials Chemistry C ◽

10.1039/c6tc04692d ◽

2017 ◽

Vol 5 (5) ◽

pp. 1247-1254 ◽

Cited By ~ 56

Author(s):

Mei Zhou ◽

Xiaobin Chen ◽

Menglei Li ◽

Aijun Du

Keyword(s):

Charge Carrier ◽

Transport Properties ◽

First Principles ◽

Carrier Mobility ◽

Compressive Strain ◽

Charge Carrier Mobility ◽

Biaxial Strain ◽

First Principles Study ◽

Biaxial Tensile

Our first-principles study demonstrate that biaxial tensile/compressive strain is vital in manipulating transport properties of monolayer SnSe.

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Theoretical investigations of the substituent effect on the electronic and charge transport properties of butterfly molecules

New Journal of Chemistry ◽

10.1039/c9nj01767d ◽

2019 ◽

Vol 43 (31) ◽

pp. 12440-12452

Author(s):

Lijuan Wang ◽

Jianhong Dai ◽

Yan Song

Keyword(s):

Charge Carrier ◽

Charge Transport ◽

Transport Properties ◽

Substituent Effect ◽

Carrier Mobility ◽

Crystal Packing ◽

Charge Carrier Mobility ◽

Theoretical Investigations

Introducing different substituents into the pyrene core leads to different crystal packing motifs, and the charge carrier mobility can be effectively modulated by the introduction of electron-donating and electron-withdrawing groups.

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Electronic transport properties of graphene nanostructures

Acta Crystallographica Section A Foundations and Advances ◽

10.1107/s2053273314098027 ◽

2014 ◽

Vol 70 (a1) ◽

pp. C197-C197

Author(s):

Katsunori Wakabayashi

Keyword(s):

Transport Properties ◽

Electronic Transport ◽

Carrier Mobility ◽

Graphene Nanoribbons ◽

Localized States ◽

Dirac Fermion ◽

Charged Impurity ◽

Electronic Transport Properties ◽

Boltzmann Transport Theory ◽

Nanostructured Systems

The electronic states of graphene near the Fermi energy are well described by massless Dirac Fermion. The presence of edges, however, makes strong implications for the spectrum of the electrons. In graphene nanoribbons with zigzag edges, localized states appear at the edge with energies close to the Fermi level. In contrast, edge states are absent for ribbons with armchair edges. In my talk, we focus on edge and nanoscale effect on the electronic properties of graphene nanoribbons. We discuss the following aspects of graphene nanostructured systems. (1) In zigzag nanoribbons, for nonmagnetic long-ranged disorder, a single perfectly conducting channel emerges associated with a chiral mode due to the edge state, i.e., the absence of the localization in this class. (2) We show the electronic transport properties of graphene nanojunctions crucially depend on the peripheral lattice structures. The condition for electron confinement is discussed. (3) We will discuss the effect of edge chemical modification on magnetic properties of nanographene systems. Also, we discuss the hole doping effect on the spin-polarized states appearing along the graphene zigzag edges. Our studies reveal that the peculiar electronic, magnetic and transport properties of graphene nanostructured systems. In addition, we present our recent work on graphene double layer structure (GDLS), where two graphene layers are separated by a thin dielectric. We will discuss the dielectric environment effect on the charged-impurity-limited carrier mobility of the GDLS on the basis of the Boltzmann transport theory. It is found that carrier mobility strongly depends on the dielectric constant of the barrier layer if the interlayer distance becomes larger than the inverse of the Fermi wave vector. Our results suggest effective use of ultra-thin dielectric barriers and a practical design strategy to improve the charged-impurity-limited mobility of the GDLS.

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Tunable charge transfer properties in metal-phthalocyanine heterojunctions

Nanoscale ◽

10.1039/c5nr08671j ◽

2016 ◽

Vol 8 (16) ◽

pp. 8607-8617 ◽

Cited By ~ 12

Author(s):

P. F. Siles ◽

T. Hahn ◽

G. Salvan ◽

M. Knupfer ◽

F. Zhu ◽

...

Keyword(s):

Charge Transfer ◽

Transport Properties ◽

Carrier Mobility ◽

Spatial Mapping ◽

Transport Mechanisms ◽

Metal Phthalocyanine ◽

Conductive Afm ◽

Transfer Properties

The transport properties of phthalocyanine heterojunctions are precisely tuned via engineering of the organic heterostructure. Conductive AFM techniques allow identifying transport mechanisms and performing nanoscale spatial mapping of carrier mobility.

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Synthesis and Electronic Transport Properties of Sn-Doped CoSb3

Materials Science Forum ◽

10.4028/www.scientific.net/msf.658.21 ◽

2010 ◽

Vol 658 ◽

pp. 21-24 ◽

Cited By ~ 1

Author(s):

Kwan Ho Park ◽

Jae Yong Jung ◽

Jung Il Lee ◽

Kyung Wook Jang ◽

Whan Gi Kim ◽

...

Keyword(s):

Transport Properties ◽

Electronic Transport ◽

Carrier Mobility ◽

Impurity Scattering ◽

Mean Free Path ◽

Induction Melting ◽

Excess Charge ◽

Doping Content ◽

Sn Doping ◽

Electronic Transport Properties

Sn-doped CoSb3 skutterudites were prepared by encapsulated induction melting and their electronic transport properties were examined. The Sn dopant generated excess charge carriers, which increased in concentration with increasing Sn doping content. However, the carrier mobility decreased with increasing doping content, indicating a decrease in the hole mean free path by impurity scattering. The Seebeck coefficient decreased and the electrical resistivity decreased slightly with increasing the carrier concentration due to the reduced carrier mobility by impurity scattering. The lattice thermal conductivity was dominant in the Sn-doped CoSb3 skutterudites.

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Understanding the Intrinsic Carrier Transport in Highly Oriented Poly(3-hexylthiophene): Effect of Side Chain Regioregularity

Polymers ◽

10.3390/polym10080815 ◽

2018 ◽

Vol 10 (8) ◽

pp. 815 ◽

Cited By ~ 5

Author(s):

Sanyin Qu ◽

Chen Ming ◽

Qin Yao ◽

Wanheng Lu ◽

Kaiyang Zeng ◽

...

Keyword(s):

Transport Properties ◽

Organic Semiconductors ◽

High Performance ◽

Carrier Mobility ◽

Carrier Transport ◽

Three Dimensional ◽

Side Chain ◽

Conductive Atomic Force Microscopy ◽

Dynamics Simulations ◽

Carrier Transport Properties

The fundamental understanding of the influence of molecular structure on the carrier transport properties in the field of organic thermoelectrics (OTEs) is a big challenge since the carrier transport behavior in conducting polymers reveals average properties contributed from all carrier transport channels, including those through intra-chain, inter-chain, inter-grain, and hopping between disordered localized sites. Here, combining molecular dynamics simulations and experiments, we investigated the carrier transport properties of doped highly oriented poly(3-hexylthiophene) (P3HT) films with different side-chain regioregularity. It is demonstrated that the substitution of side chains can not only take effect on the carrier transport edge, but also on the dimensionality of the transport paths and as a result, on the carrier mobility. Conductive atomic force microscopy (C-AFM) study as well as temperature-dependent measurements of the electrical conductivity clearly showed ordered local current paths in the regular side chain P3HT films, while random paths prevailed in the irregular sample. Regular side chain substitution can be activated more easily and favors one-dimensional transport along the backbone chain direction, while the irregular sample presents the three-dimensional electron hopping behavior. As a consequence, the regular side chain P3HT samples demonstrated high carrier mobility of 2.9 ± 0.3 cm2/V·s, which is more than one order of magnitude higher than that in irregular side chain P3HT films, resulting in a maximum thermoelectric (TE) power factor of 39.1 ± 2.5 μW/mK2 at room temperature. These findings would formulate design rules for organic semiconductors based on these complex systems, and especially assist in the design of high performance OTE polymers.

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Charge transport properties in pentacene films: Evaluation of carrier mobility by different techniques

Solid-State Electronics ◽

10.1016/j.sse.2011.12.011 ◽

2012 ◽

Vol 69 ◽

pp. 99-103 ◽

Cited By ~ 9

Author(s):

B. Lucas ◽

A. El Amrani ◽

A. Moliton ◽

A. Skaiky ◽

A. El Hajj ◽

...

Keyword(s):

Charge Transport ◽

Transport Properties ◽

Carrier Mobility

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Charge carrier mobility and electronic properties of Al(Op)3: impact of excimer formation

Beilstein Journal of Nanotechnology ◽

10.3762/bjnano.6.112 ◽

2015 ◽

Vol 6 ◽

pp. 1107-1115 ◽

Cited By ~ 6

Author(s):

Andrea Magri ◽

Pascal Friederich ◽

Bernhard Schäfer ◽

Valeria Fattori ◽

Xiangnan Sun ◽

...

Keyword(s):

Thin Film ◽

Charge Carrier ◽

Transport Properties ◽

Electron Mobility ◽

Carrier Mobility ◽

Hole Mobility ◽

Charge Carrier Mobility ◽

The Other ◽

Theoretical Simulation ◽

Excimer Formation

We have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olate)aluminium(III) (Al(Op)3) both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be −5.93 and −3.26 eV, respectively, which were close to the corresponding calculated values. Al(Op)3 was successfully evaporated onto quartz substrates and was clearly identified in the absorption spectra of both the solution and the thin film. A structured steady state fluorescence emission was detected in solution, whereas a broad, red-shifted emission was observed in the thin film. This indicates the formation of excimers in the solid state, which is crucial for the transport properties. The incorporation of Al(Op)3 into organic thin film transistors (TFTs) was performed in order to measure the charge carrier mobility. The experimental setup detected no electron mobility, while a hole mobility between 0.6 × 10−6 and 2.1 × 10−6 cm2·V−1·s−1 was measured. Theoretical simulations, on the other hand, predicted an electron mobility of 9.5 × 10−6 cm2·V−1·s−1 and a hole mobility of 1.4 × 10−4 cm2·V−1·s−1. The theoretical simulation for the hole mobility predicted an approximately one order of magnitude higher hole mobility than was observed in the experiment, which is considered to be in good agreement. The result for the electron mobility was, on the other hand, unexpected, as both the calculated electron mobility and chemical common sense (based on the capability of extended aromatic structures to efficiently accept and delocalize additional electrons) suggest more robust electron charge transport properties. This discrepancy is explained by the excimer formation, whose inclusion in the multiscale simulation workflow is expected to bring the theoretical simulation and experiment into agreement.

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