Electronic and transport properties of 
n
-type monolayer black phosphorus at low temperatures

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

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Behaviour of induced states of substitutional and adatom impurity doping on electronic transport properties of single-layer black phosphorus

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2021.114701 ◽

2021 ◽

pp. 114701

Author(s):

Osama Jalil ◽

Shahzad Ahmad ◽

Kah-Wee Ang ◽

Usman Younis

Keyword(s):

Transport Properties ◽

Electronic Transport ◽

Single Layer ◽

Black Phosphorus ◽

Electronic Transport Properties ◽

Impurity Doping

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Thickness-dependent Raman spectra, transport properties and infrared photoresponse of few-layer black phosphorus

Journal of Materials Chemistry C ◽

10.1039/c5tc01809a ◽

2015 ◽

Vol 3 (42) ◽

pp. 10974-10980 ◽

Cited By ~ 68

Author(s):

Sijie Liu ◽

Nengjie Huo ◽

Sheng Gan ◽

Yan Li ◽

Zhongming Wei ◽

...

Keyword(s):

Visible Light ◽

Transport Properties ◽

Raman Spectra ◽

Black Phosphorus

The thickness-dependent Raman spectra, transport properties and photoresponse (from the visible light up to the communication band) of few-layer black phosphorus were studied systematically.

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Anomalous magneto-transport properties of p-type germanium inversion layers at very low temperatures

Surface Science ◽

10.1016/0039-6028(84)90281-4 ◽

1984 ◽

Vol 142 (1-3) ◽

pp. 43-47 ◽

Cited By ~ 4

Author(s):

G. Remenyi ◽

S. Uchida ◽

G. Landwehr ◽

A. Briggs ◽

E. Bangert

Keyword(s):

Transport Properties ◽

Low Temperatures ◽

P Type

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Separating bulk from grain boundary Li ion conductivity in the sol–gel prepared solid electrolyte Li1.5Al0.5Ti1.5(PO4)3

Journal of Materials Chemistry A ◽

10.1039/c5ta06379e ◽

2015 ◽

Vol 3 (42) ◽

pp. 21343-21350 ◽

Cited By ~ 76

Author(s):

Stefan Breuer ◽

Denise Prutsch ◽

Qianli Ma ◽

Viktor Epp ◽

Florian Preishuber-Pflügl ◽

...

Keyword(s):

Impedance Spectroscopy ◽

Grain Boundary ◽

Ion Transport ◽

Solid Electrolyte ◽

Transport Properties ◽

Low Temperatures ◽

Sol Gel ◽

Ion Conductivity ◽

Li Ion ◽

Ceramic Electrolytes

Impedance spectroscopy measurements down to very low temperatures allowed for resolving bulk ion transport properties in highly conducting ceramic electrolytes.

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Crystal structure and superconductivity in black phosphorus at low temperatures and high pressures

Synthetic Metals ◽

10.1016/0379-6779(91)91988-m ◽

1991 ◽

Vol 42 (1-2) ◽

pp. 1947

Author(s):

I. Shirotani ◽

K. Tsuji ◽

H. Kawamura

Keyword(s):

Crystal Structure ◽

Low Temperatures ◽

High Pressures ◽

Black Phosphorus

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Transport properties of silicon/silicon–germanium (Si/SiGe) nanostructures at low temperatures

Silicon–Germanium (SiGe) Nanostructures ◽

10.1533/9780857091420.3.361 ◽

2011 ◽

pp. 361-398 ◽

Cited By ~ 1

Author(s):

A. Gold

Keyword(s):

Transport Properties ◽

Silicon Germanium ◽

Low Temperatures ◽

Silicon Silicon

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Manifestation of the DX Centre in Heavily δ-Doped GaAs(Si)

MRS Proceedings ◽

10.1557/proc-281-19 ◽

1992 ◽

Vol 281 ◽

Author(s):

S. Arscott ◽

M. Missous ◽

L. Dobaczewski ◽

P. C. Harness ◽

D. K. Maude ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Transport Properties ◽

Electron Concentration ◽

Low Temperatures ◽

Molecular Beam ◽

Wave Functions ◽

Potential Well ◽

Electronic Wave ◽

Hall Measurements ◽

Electronic Wave Functions

ABSTRACTShubnikov-de Haas and Hall measurements have been performed on singly delta doped GaAs(Si) structures, grown by molecular beam epitaxy, enabling us to study the effects of illumination and temperature upon bulk and individual subband, mobilities and carrier concentrations. In a highly doped sample, where the peak 3D electron concentration approaches 2×1019cm−3, we have observed novel changes in subband transport characteristics, not observed in the lower doped samples, which we attribute to the presence of DX centre phenomena. This paper explains the variations in individual subband transport properties due to a possible shift of the electronic wave functions contained in the potential well. This shift occurs due to a recombination-autoionization(R-A) process involving filled DX centres and free holes upon sample illumination at low temperatures.

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