Anomalous magneto-transport properties of p-type germanium inversion layers at very low temperatures

1984 ◽  
Vol 142 (1-3) ◽  
pp. 43-47 ◽  
Author(s):  
G. Remenyi ◽  
S. Uchida ◽  
G. Landwehr ◽  
A. Briggs ◽  
E. Bangert
1984 ◽  
Vol 142 (1-3) ◽  
pp. A231
Author(s):  
G. Remenyi ◽  
S. Uchida ◽  
G. Landwehr ◽  
A. Briggs

Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.


RSC Advances ◽  
2021 ◽  
Vol 11 (39) ◽  
pp. 24456-24465
Author(s):  
Rapaka S. C. Bose ◽  
K. Ramesh

Polycrystalline p-type Sb1.5Bi0.5Te3 (SBT) and n-type Bi2Te2.7Se0.3 (BTS) compounds possessing layered crystal structure show anisotropic electronic and thermal transport properties.


1987 ◽  
Vol 97 ◽  
Author(s):  
C. Wood ◽  
D. Emin ◽  
R. S. Feigelson ◽  
I. D. R. Mackinnon

ABSTRACTMeasurements of the electrical conductivity, Seebeck coefficient and Hall mobility from -300 K to -1300 K have been carried out on multiphase hotpressed samples of the nominal composition B6Si. In all samples the conductivity and the p-type Seebeck coefficient both increase smoothly with increasing temperature. By themselves, these facts suggest small-polaronic hopping between inequivalent sites. The measured Hall mobilities are always low, but vary in sign. A possible explanation is offered for this anomalous behavior.


2017 ◽  
Vol 4 (9) ◽  
pp. 1458-1464 ◽  
Author(s):  
M.-Y. Lee ◽  
D. I. Bilc ◽  
E. Symeou ◽  
Y.-C. Lin ◽  
I.-C. Liang ◽  
...  

A new p-type semiconductor Ba3Ag3InTe6 with transport properties dominated by the layer [Ag3Te4]5− distributed in the valence band.


2006 ◽  
Vol 21 (12) ◽  
pp. 1522-1526 ◽  
Author(s):  
Z Y Xiao ◽  
Y C Liu ◽  
B H Li ◽  
J Y Zhang ◽  
D X Zhao ◽  
...  

2015 ◽  
Vol 3 (42) ◽  
pp. 21343-21350 ◽  
Author(s):  
Stefan Breuer ◽  
Denise Prutsch ◽  
Qianli Ma ◽  
Viktor Epp ◽  
Florian Preishuber-Pflügl ◽  
...  

Impedance spectroscopy measurements down to very low temperatures allowed for resolving bulk ion transport properties in highly conducting ceramic electrolytes.


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