Transport properties of silicon/silicon–germanium (Si/SiGe) nanostructures at low temperatures

2011 ◽  
pp. 361-398 ◽  
Author(s):  
A. Gold
Keyword(s):  
Transport Properties ◽  
Silicon Germanium ◽  
Low Temperatures ◽  
Silicon Silicon

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

Anomalous magneto-transport properties of p-type germanium inversion layers at very low temperatures

1984 ◽  
Vol 142 (1-3) ◽  
pp. 43-47 ◽  
Author(s):  
G. Remenyi ◽  
S. Uchida ◽  
G. Landwehr ◽  
A. Briggs ◽  
E. Bangert
Keyword(s):  
Transport Properties ◽  
Low Temperatures ◽  
P Type

scholarly journals Separating bulk from grain boundary Li ion conductivity in the sol–gel prepared solid electrolyte Li1.5Al0.5Ti1.5(PO4)3

2015 ◽  
Vol 3 (42) ◽  
pp. 21343-21350 ◽  
Author(s):  
Stefan Breuer ◽  
Denise Prutsch ◽  
Qianli Ma ◽  
Viktor Epp ◽  
Florian Preishuber-Pflügl ◽  
...  
Keyword(s):  
Impedance Spectroscopy ◽  
Grain Boundary ◽  
Ion Transport ◽  
Solid Electrolyte ◽  
Transport Properties ◽  
Low Temperatures ◽  
Sol Gel ◽  
Ion Conductivity ◽  
Li Ion ◽  
Ceramic Electrolytes

Impedance spectroscopy measurements down to very low temperatures allowed for resolving bulk ion transport properties in highly conducting ceramic electrolytes.

scholarly journals Electronic and transport properties of n -type monolayer black phosphorus at low temperatures

2017 ◽  
Vol 95 (11) ◽  
Author(s):  
F. W. Han ◽  
W. Xu ◽  
L. L. Li ◽  
C. Zhang ◽  
H. M. Dong ◽  
...  
Keyword(s):  
Transport Properties ◽  
Low Temperatures ◽  
Black Phosphorus

Manifestation of the DX Centre in Heavily δ-Doped GaAs(Si)

1992 ◽  
Vol 281 ◽  
Author(s):  
S. Arscott ◽  
M. Missous ◽  
L. Dobaczewski ◽  
P. C. Harness ◽  
D. K. Maude ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Electron Concentration ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Wave Functions ◽  
Potential Well ◽  
Electronic Wave ◽  
Hall Measurements ◽  
Electronic Wave Functions

ABSTRACTShubnikov-de Haas and Hall measurements have been performed on singly delta doped GaAs(Si) structures, grown by molecular beam epitaxy, enabling us to study the effects of illumination and temperature upon bulk and individual subband, mobilities and carrier concentrations. In a highly doped sample, where the peak 3D electron concentration approaches 2×1019cm−3, we have observed novel changes in subband transport characteristics, not observed in the lower doped samples, which we attribute to the presence of DX centre phenomena. This paper explains the variations in individual subband transport properties due to a possible shift of the electronic wave functions contained in the potential well. This shift occurs due to a recombination-autoionization(R-A) process involving filled DX centres and free holes upon sample illumination at low temperatures.

The effect of synthesis parameters on transport properties of nanostructured bulk thermoelectric p-type silicon germanium alloy

2012 ◽  
Vol 209 (10) ◽  
pp. 2049-2058 ◽  
Author(s):  
Zahra Zamanipour ◽  
Xinghua Shi ◽  
Arash M. Dehkordi ◽  
Jerzy S. Krasinski ◽  
Daryoosh Vashaee
Keyword(s):  
Transport Properties ◽  
Silicon Germanium ◽  
Type Silicon ◽  
Synthesis Parameters ◽  
Germanium Alloy ◽  
P Type

A Model for the High Temperature Transport Properties of Heavily Doped P-Type Silicon-Germanium Alloys

1991 ◽  
Vol 234 ◽  
Author(s):  
Cronin B. Vining
Keyword(s):  
High Temperature ◽  
Transport Properties ◽  
Silicon Germanium ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Long Wavelength ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type ◽  
Silicon Germanium Alloys

ABSTRACTA model is presented for the high temperature transport properties of large grain size, heavily doped p-type silicon-germanium alloys. Good agreement with experiment (±10%) is found by considering acoustic phonon and ionized impurity scattering for holes and phonon-phonon, point defect and hole-phonon scattering for phonons. Phonon scattering by holes is found to be substantially weaker than phonon scattering by electrons, which accounts for the larger thermal conductivity values of ptype silicon-germanium alloys compared to similarly doped n-type silicongermanium alloys. The relatively weak scattering of long-wavelength phonons by holes raises the possibility that p-type silicon-germanium alloys may be improved for thermoelectric applications by the addition of an additional phonon scattering mechanism which is effective on intermediate and long-wavelength phonons. Calculations indicate improvements in the thermoelectric figure of merit up to 40% may be possible by incorporating several volume percent of 20 Å radius inclusions into p-type silicon-germanium alloys.

A study on the transport properties of Fe67Co18B14Si1 and Fe81B13.5Si3.5C2 metallic glass alloys at low temperatures

2000 ◽  
Vol 113 (9) ◽  
pp. 533-538 ◽  
Author(s):  
K Lal ◽  
A.K Meikap ◽  
S.K Chattopadhyay ◽  
S.K Chatterjee ◽  
M Ghosh ◽  
...  
Keyword(s):  
Metallic Glass ◽  
Transport Properties ◽  
Low Temperatures

Magnetic and electrical transport properties of Sr2Ti1−xCoxO4 ceramics by sol–gel

2017 ◽  
Vol 31 (17) ◽  
pp. 1750195
Author(s):  
Li Zhang ◽  
Yibao Li ◽  
Zhen Tang ◽  
Yan Deng ◽  
Hui Yuan ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Low Temperatures ◽  
Sol Gel ◽  
Variable Range Hopping ◽  
Electrical Transport Properties ◽  
Co Doping ◽  
Hopping Model ◽  
Variable Range Hopping Model ◽  
Co Doped

Microstructures, electrical transport and magnetic properties of Sr[Formula: see text]Ti[Formula: see text]Co[Formula: see text]O[Formula: see text] ceramics are investigated. With Co doping, the Sr[Formula: see text]Ti[Formula: see text]Co[Formula: see text]O[Formula: see text] ceramics remain tetragonal structure while the grain size is decreased with doping. Magnetic moment is enhanced with Co doping and ferromagnetism is observed at low temperatures for Co-doped Sr[Formula: see text]TiO[Formula: see text]. The Sr[Formula: see text]Ti[Formula: see text]Co[Formula: see text]O[Formula: see text] and Sr[Formula: see text]Ti[Formula: see text]Co[Formula: see text]O[Formula: see text] show semiconductor-like transport properties, which can be well fitted by Mott variable range hopping model. The results will provide an effective route to synthesize Sr[Formula: see text]Ti[Formula: see text]Co[Formula: see text]O[Formula: see text] ceramics as well as to investigate the physical properties.

Transport properties of the Anderson model at low temperatures

1986 ◽  
Vol 118 (6) ◽  
pp. 301-304 ◽  
Author(s):  
Norio Kawakami ◽  
Ayao Okiji
Keyword(s):  
Transport Properties ◽  
Anderson Model ◽  
Low Temperatures
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