scholarly journals Tuning of the Ru4+ ground-state orbital population in the 4d4 Mott insulator Ca2RuO4 achieved by La doping

2019 ◽  
Vol 99 (7) ◽  
Author(s):  
D. Pincini ◽  
L. S. I. Veiga ◽  
C. D. Dashwood ◽  
F. Forte ◽  
M. Cuoco ◽  
...  
Keyword(s):  
Ground State ◽  
Mott Insulator ◽  
La Doping ◽  
Orbital Population

scholarly journals Time-reversal symmetry breaking superconducting ground state in the doped Mott insulator on the honeycomb lattice

2013 ◽  
Vol 88 (15) ◽  
Author(s):  
Zheng-Cheng Gu ◽  
Hong-Chen Jiang ◽  
D. N. Sheng ◽  
Hong Yao ◽  
Leon Balents ◽  
...  
Keyword(s):  
Symmetry Breaking ◽  
Ground State ◽  
Time Reversal ◽  
Mott Insulator ◽  
Honeycomb Lattice ◽  
Time Reversal Symmetry ◽  
Doped Mott Insulator

scholarly journals Two-dimensional ground-state mapping of a Mott-Hubbard system in a flexible field-effect device

2019 ◽  
Vol 5 (5) ◽  
pp. eaav7282 ◽  
Author(s):  
Yoshitaka Kawasugi ◽  
Kazuhiro Seki ◽  
Satoshi Tajima ◽  
Jiang Pu ◽  
Taishi Takenobu ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Ground State ◽  
Field Effect ◽  
Mott Insulator ◽  
Two Dimensional ◽  
Superconducting Transition ◽  
Microscopic Mechanism ◽  
One Dimensional ◽  
First Order ◽  
Insulating Phase

A Mott insulator sometimes induces unconventional superconductivity in its neighbors when doped and/or pressurized. Because the phase diagram should be strongly related to the microscopic mechanism of the superconductivity, it is important to obtain the global phase diagram surrounding the Mott insulating state. However, the parameter available for controlling the ground state of most Mott insulating materials is one-dimensional owing to technical limitations. Here, we present a two-dimensional ground-state mapping for a Mott insulator using an organic field-effect device by simultaneously tuning the bandwidth and bandfilling. The observed phase diagram showed many unexpected features such as an abrupt first-order superconducting transition under electron doping, a recurrent insulating phase in the heavily electron-doped region, and a nearly constant superconducting transition temperature in a wide parameter range. These results are expected to contribute toward elucidating one of the standard solutions for the Mott-Hubbard model.

scholarly journals Wannier States of FCC Symmetry Qualifying Paramagnetic NiO to Be a Mott Insulator

Symmetry ◽  
2020 ◽  
Vol 12 (5) ◽  
pp. 687 ◽  
Author(s):  
Ekkehard Krüger
Keyword(s):  
Ground State ◽  
Energy Band ◽  
Mott Insulator ◽  
Paramagnetic Phase ◽  
Localized States ◽  
Structural Distortion ◽  
Antiferromagnetic Phase ◽  
Antiferromagnetic State ◽  
Compound I ◽  
Wannier Functions

This letter extends my recent paper on antiferromagnetic NiO [Structural Distortion Stabilizing the Antiferromagnetic and Insulating Ground State of NiO, Symmetry 2020, 12(1), 56] by including also the paramagnetic phase of this compound. I report evidence that paramagnetic NiO possesses a narrow, roughly half-filled energy band that produces a nonadiabatic atomic-like motion providing the basis for a Mott insulator in the paramagnetic phase. While the atomic-like motion operating in the antiferromagnetic phase is adapted to the symmetry of the antiferromagnetic state, in the paramagnetic phase, the related localized states are represented by optimally localized Wannier functions possessing the full fcc symmetry of paramagnetic NiO. The nonadiabatic Wannier states are twofold degenerate, have d-like symmetry, and are situated at the Ni atoms.

SUPERCONDUCTIVITY OF THE DOPED MOTT INSULATOR IN THE CSL PHASE

1990 ◽  
Vol 04 (02) ◽  
pp. 95-103 ◽  
Author(s):  
D. V. KHVESHCHENKO ◽  
Ya. I. KOGAN
Keyword(s):  
Gauge Theory ◽  
Ground State ◽  
Mott Insulator ◽  
P Wave ◽  
Spin Liquid ◽  
P Waves ◽  
Ginzburg Landau ◽  
Doped Mott Insulator ◽  
Chern Simons ◽  
Topological Mass

The effective infrared theory of the planar CuO 2 antiferromagnetic (AFM) is investigated. In the Chiral Spin Liquid (CSL) phase this theory is the 2 + 1 gauge theory with topological mass (Chern-Simons) term and we obtain the attraction between charged fermions (holes). The last are isodublets as a consequence of the two sublattices existence. We get the gap equations for different waves and there is gap degeneracy between S and P waves. The ground state is P and T odd in the case of the P-wave pairing and there is the new term in the Ginzburg-Landau phenomenological Lagrangian, describing the layer's magnetization.

scholarly journals Bose-Hubbard model in a strong effective magnetic field: Emergence of a chiral Mott insulator ground state

2012 ◽  
Vol 85 (4) ◽  
Author(s):  
Arya Dhar ◽  
Maheswar Maji ◽  
Tapan Mishra ◽  
R. V. Pai ◽  
Subroto Mukerjee ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Hubbard Model ◽  
Ground State ◽  
Mott Insulator ◽  
Effective Magnetic Field ◽  
Field Emergence

Ground-state instability of the Mott insulatorCa2RuO4:Impact of slight La doping on the metal-insulator transition and magnetic ordering

2000 ◽  
Vol 61 (8) ◽  
pp. R5053-R5057 ◽  
Author(s):  
G. Cao ◽  
S. McCall ◽  
V. Dobrosavljevic ◽  
C. S. Alexander ◽  
J. E. Crow ◽  
...  
Keyword(s):  
Ground State ◽  
Magnetic Ordering ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
La Doping

scholarly journals Electric dipole induced bulk ferromagnetism in dimer Mott molecular compounds

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Ryo Yoshimoto ◽  
Satoshi Yamashita ◽  
Hiroki Akutsu ◽  
Yasuhiro Nakazawa ◽  
Tetsuro Kusamoto ◽  
...  
Keyword(s):  
Ground State ◽  
Layer Structure ◽  
Coulomb Repulsion ◽  
Ferromagnetic State ◽  
Mott Insulator ◽  
Hole Doping ◽  
Systematic Change ◽  
Experimental Realization ◽  
Ferromagnetic Ground State ◽  
The Difference

AbstractMagnetic properties of Mott–Hubbard systems are generally dominated by strong antiferromagnetic interactions produced by the Coulomb repulsion of electrons. Although theoretical possibility of a ferromagnetic ground state has been suggested by Nagaoka and Penn as single-hole doping in a Mott insulator, experimental realization has not been reported more than half century. We report the first experimental possibility of such ferromagnetism in a molecular Mott insulator with an extremely light and homogeneous hole-doping in π-electron layers induced by net polarization of counterions. A series of Ni(dmit)2 anion radical salts with organic cations, where dmit is 1,3-dithiole-2-thione-4,5-dithiolate can form bi-layer structure with polarized cation layers. Heat capacity, magnetization, and ESR measurements substantiated the formation of a bulk ferromagnetic state around 1.0 K with quite soft magnetization versus magnetic field (M–H) characteristics in (Et-4BrT)[Ni(dmit)2]2 where Et-4BrT is ethyl-4-bromothiazolium. The variation of the magnitude of net polarizations by using the difference of counter cations revealed the systematic change of the ground state from antiferromagnetic one to ferromagnetic one. We also report emergence of metallic states through further doping and applying external pressures for this doping induced ferromagnetic state. The realization of ferromagnetic state in Nagaoka–Penn mechanism can paves a way for designing new molecules-based ferromagnets in future.

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