Robust type-II band alignment in Janus-MoSSe bilayer with extremely long carrier lifetime induced by the intrinsic electric field

2019 ◽  
Vol 99 (11) ◽  
Author(s):  
Chen Long ◽  
Ying Dai ◽  
Zhi-Rui Gong ◽  
Hao Jin
Keyword(s):  
Electric Field ◽  
Carrier Lifetime ◽  
Band Alignment ◽  
Type Ii

Vertical strain and electric field tunable electronic properties of type-II band alignment C2N/InSe van der Waals heterostructure

2019 ◽  
Vol 716 ◽  
pp. 155-161 ◽  
Author(s):  
Khang D. Pham ◽  
Nguyen N. Hieu ◽  
Le M. Bui ◽  
Huynh V. Phuc ◽  
Bui D. Hoi ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Vertical Strain ◽  
Van Der Waals Heterostructure

Tunable type-II band alignment and electronic structure of C3N4/MoSi2N4 heterostructure: Interlayer coupling and electric field

2022 ◽  
Vol 105 (4) ◽  
Author(s):  
Cuong Q. Nguyen ◽  
Yee Sin Ang ◽  
Son-Tung Nguyen ◽  
Nguyen V. Hoang ◽  
Nguyen Manh Hung ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electric Field ◽  
Interlayer Coupling ◽  
Band Alignment ◽  
Type Ii

Vertical strain and electric field tunable band alignment in type-II ZnO/MoSSe van der Waals heterostructures

2021 ◽  
Author(s):  
Pan Wang ◽  
Yixin Zong ◽  
Hao Liu ◽  
Hongyu Wen ◽  
Yueyang Liu ◽  
...  
Keyword(s):  
Electric Field ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Van Der Waals Heterostructures ◽  
Vertical Strain

The band alignment of type-II ZnO/MoSSe vdWH can be tuned to types I and III by strain and the electric field.

The electric field modulation of electronic properties in a type-II phosphorene/PbI2 van der Waals heterojunction

2019 ◽  
Vol 21 (15) ◽  
pp. 7765-7772 ◽  
Author(s):  
Yuting Wei ◽  
Fei Wang ◽  
Wenli Zhang ◽  
Xiuwen Zhang
Keyword(s):  
Solar Energy ◽  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Type Ii ◽  
Direct Bandgap ◽  
Field Modulation

The 0.52/0.83 eV direct bandgap of P/PbI2 possesses a type-II band alignment, can effectively be regulated to 0.90/1.54 eV using an external electric field in DFT/HSE06, and is useful for solar energy and optoelectronic devices.

In-plane interfacing effects of two-dimensional transition-metal dichalcogenide heterostructures

2016 ◽  
Vol 18 (23) ◽  
pp. 15632-15638 ◽  
Author(s):  
Wei Wei ◽  
Ying Dai ◽  
Baibiao Huang
Keyword(s):  
Transition Metal ◽  
Electric Field ◽  
Band Alignment ◽  
Transition Metal Dichalcogenide ◽  
Type Ii ◽  
Two Dimensional ◽  
Defect States ◽  
True Type

Two-dimensional TMD in-plane heterostructures demonstrate true type-II band alignment and the built-in electric field makes the defect states consecutive.

scholarly journals Tuning Electronic Properties of GaSe/Silicane Van der Waals Heterostructure by External Electric Field and Strain: A First-Principle Study

2021 ◽  
Vol 2021 ◽  
pp. 1-8
Author(s):  
Gang Xu ◽  
Hao Lei
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type I ◽  
First Principle ◽  
Type Ii ◽  
Direct Band Gap ◽  
Direct Band ◽  
Vdw Heterostructure

The electronic structure of GaSe/silicane (GaSe/SiH) van der Waals (vdW) heterostructure in response to a vertical electric field and strain was studied via first-principle calculations. The heterostructure had indirect band gap characteristics in the range [−1.0, −0.4] V/Å and direct band gap features in the range [−0.3, 0.2] V/Å. Furthermore, a type-II to type-I band alignment transition appeared at −0.7 and −0.3 V/Å. Additionally, the GaSe/SiH vdW heterostructure had a type-II band alignment under strain, but an indirect to direct band gap semiconductor transition occurred at −3%. These results indicated that the GaSe/SiH vdW heterostructure may have applications in novel nanoelectronic and optoelectronic devices.

Strain and electric field tunable electronic properties of type-II band alignment in van der Waals GaSe/MoSe2 heterostructure

2019 ◽  
Vol 521 ◽  
pp. 92-99 ◽  
Author(s):  
Khang D. Pham ◽  
Chuong V. Nguyen ◽  
Huong T.T. Phung ◽  
Huynh V. Phuc ◽  
B. Amin ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii

Interlayer coupling and external electric field tunable electronic properties of a 2D type-I α-tellurene/MoS2 heterostructure

2018 ◽  
Vol 6 (38) ◽  
pp. 10256-10262 ◽  
Author(s):  
Wenli Zhang ◽  
Dahu Chang ◽  
Qiang Gao ◽  
Chunyao Niu ◽  
Chong Li ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
Interlayer Coupling ◽  
Band Alignment ◽  
Type I ◽  
Type Ii

Applying an external electric field can induce a transition from a type-I to a type-II band alignment in an α-tellurene/MoS2 heterostructure.

Type-II tunable SiC/InSe heterostructures under an electric field and biaxial strain

2020 ◽  
Vol 22 (17) ◽  
pp. 9647-9655 ◽  
Author(s):  
Zhu Wang ◽  
Yan Zhang ◽  
Xing Wei ◽  
Tingting Guo ◽  
Jibin Fan ◽  
...  
Keyword(s):  
Electric Field ◽  
Effective Mass ◽  
Band Alignment ◽  
Type Ii ◽  
Biaxial Strain ◽  
Carrier Effective Mass

A novel type II band alignment with lower carrier effective mass can be adjusted by an electric field and strain.

Electric field and uniaxial strain tunable electronic properties of the InSb/InSe heterostructure

2020 ◽  
Vol 22 (36) ◽  
pp. 20712-20720
Author(s):  
Zhu Wang ◽  
Fangwen Sun ◽  
Jian Liu ◽  
Ye Tian ◽  
Zhihui Zhang ◽  
...  
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Electronic Properties ◽  
Uniaxial Strain ◽  
Band Alignment ◽  
Type Ii ◽  
Direct Band Gap ◽  
Direct Band

The InSb/InSe heterostructure with tunable electronic properties has a direct band gap and an intrinsic type-II band alignment.

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