Electric field and uniaxial strain tunable electronic properties of the InSb/InSe heterostructure

The electronic structure of GaSe/silicane (GaSe/SiH) van der Waals (vdW) heterostructure in response to a vertical electric field and strain was studied via first-principle calculations. The heterostructure had indirect band gap characteristics in the range [−1.0, −0.4] V/Å and direct band gap features in the range [−0.3, 0.2] V/Å. Furthermore, a type-II to type-I band alignment transition appeared at −0.7 and −0.3 V/Å. Additionally, the GaSe/SiH vdW heterostructure had a type-II band alignment under strain, but an indirect to direct band gap semiconductor transition occurred at −3%. These results indicated that the GaSe/SiH vdW heterostructure may have applications in novel nanoelectronic and optoelectronic devices.

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Theoretical Prediction of the Structural and Electronic Properties of a Single Layer Graphene-like Two-dimensional Janus GaInSTe

VNU Journal of Science Mathematics - Physics ◽

10.25073/2588-1124/vnumap.4408 ◽

2021 ◽

Vol 37 (2) ◽

Author(s):

Nguyen Van Chuong ◽

Nguyen Ngoc Hieu ◽

Nguyen Van Hieu

Keyword(s):

Electric Field ◽

Band Gap ◽

Electronic Properties ◽

Single Layer ◽

Single Layer Graphene ◽

Two Dimensional ◽

Direct Band Gap ◽

Structural And Electronic Properties ◽

Direct Band ◽

New Type

This paper constructs a new type of two-dimensional graphene-like Janus GaInSTe monolayer and systematically investigates its structural and electronic properties as well as the effect of external electric field using first-principles calculations. In the ground state, Janus GaInSTe monolayer is dynamically stable with no imaginary frequencies in its phonon spectrum and possesses a direct band gap semiconductor. The band gap of Janus GaInSTe monolayer can be tuned by applying an electric field, which leads the different transitions from semiconductor to metal, and from indirect to direct band gap. These findings show a great potential application of Janus GaInSTe material for designing next-generation devices.

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Electronic Properties of Si - Ge Micro Nipi Structures

MRS Proceedings ◽

10.1557/proc-116-513 ◽

1988 ◽

Vol 116 ◽

Cited By ~ 1

Author(s):

L. H. Yang ◽

C. Y. Fong ◽

J. S. Nelson

Keyword(s):

Band Gap ◽

Electronic Properties ◽

Real Space ◽

Band Alignment ◽

Charge Carriers ◽

Acceptor State ◽

Direct Band Gap ◽

N Doping ◽

Direct Band ◽

Donor State

AbstractElectronic properties of the n-doping--insulator--p-doping--insulator structures in ultra thin strained [001] Si - Ge superlattice have been studied theoretically. The Ge - layer is used as one of the insulating region. The Al and As atoms are treated as impurities. The superlattice ((Si)10 -(Ge)2) exhibits an indirect gap in reciprocal space and the staggered band alignment in real space. With doping, the samples show a direct band gap and staggered band alignment. The acceptor state is associated with the Al-Si bonding state, while the donor state is derived from the As s-like state. The separation of the charge carriers in the real space can be obtained.

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Strain-induced semimetal-to-semiconductor transition and indirect-to-direct band gap transition in monolayer 1T-TiS2

RSC Advances ◽

10.1039/c5ra16877e ◽

2015 ◽

Vol 5 (102) ◽

pp. 83876-83879 ◽

Cited By ~ 23

Author(s):

Chengyong Xu ◽

Paul A. Brown ◽

Kevin L. Shuford

Keyword(s):

Band Gap ◽

Electronic Properties ◽

Plane Strain ◽

Material Properties ◽

First Principles ◽

Tensile Strain ◽

First Principles Calculations ◽

Direct Band Gap ◽

Direct Band ◽

Uniform Plane

We have investigated the effect of uniform plane strain on the electronic properties of monolayer 1T-TiS2using first-principles calculations. With the appropriate tensile strain, the material properties can be transformed from a semimetal to a direct band gap semiconductor.

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Vertical strain and electric field tunable electronic properties of type-II band alignment C2N/InSe van der Waals heterostructure

Chemical Physics Letters ◽

10.1016/j.cplett.2018.12.027 ◽

2019 ◽

Vol 716 ◽

pp. 155-161 ◽

Cited By ~ 23

Author(s):

Khang D. Pham ◽

Nguyen N. Hieu ◽

Le M. Bui ◽

Huynh V. Phuc ◽

Bui D. Hoi ◽

...

Keyword(s):

Electric Field ◽

Electronic Properties ◽

Van Der Waals ◽

Band Alignment ◽

Type Ii ◽

Vertical Strain ◽

Van Der Waals Heterostructure

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Electronic properties of Janus silicene: new direct band gap semiconductors

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/49/44/445305 ◽

2016 ◽

Vol 49 (44) ◽

pp. 445305 ◽

Cited By ~ 23

Author(s):

Minglei Sun ◽

Qingqiang Ren ◽

Sake Wang ◽

Jin Yu ◽

Wencheng Tang

Keyword(s):

Band Gap ◽

Electronic Properties ◽

Direct Band Gap ◽

Direct Band

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Novel electronic properties of two-dimensional AsxSby alloys studied using DFT

Journal of Materials Chemistry C ◽

10.1039/c8tc00079d ◽

2018 ◽

Vol 6 (11) ◽

pp. 2854-2861 ◽

Cited By ~ 7

Author(s):

N. Zhao ◽

Y. F. Zhu ◽

Q. Jiang

Keyword(s):

Band Gap ◽

Electronic Properties ◽

Effective Mass ◽

Two Dimensional ◽

Direct Band Gap ◽

Direct Band

Monolayered α-AsxSby alloys harbor the direct band gap and the low effective mass in the certain component.

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The electric field modulation of electronic properties in a type-II phosphorene/PbI2 van der Waals heterojunction

Physical Chemistry Chemical Physics ◽

10.1039/c9cp00733d ◽

2019 ◽

Vol 21 (15) ◽

pp. 7765-7772 ◽

Cited By ~ 8

Author(s):

Yuting Wei ◽

Fei Wang ◽

Wenli Zhang ◽

Xiuwen Zhang

Keyword(s):

Solar Energy ◽

Electric Field ◽

Electronic Properties ◽

External Electric Field ◽

Van Der Waals ◽

Optoelectronic Devices ◽

Band Alignment ◽

Type Ii ◽

Direct Bandgap ◽

Field Modulation

The 0.52/0.83 eV direct bandgap of P/PbI2 possesses a type-II band alignment, can effectively be regulated to 0.90/1.54 eV using an external electric field in DFT/HSE06, and is useful for solar energy and optoelectronic devices.

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Wannier Exciton in an Electric Field. II. Electroabsorption in Direct-Band-Gap Solids

Physical Review B ◽

10.1103/physrevb.3.1382 ◽

1971 ◽

Vol 3 (4) ◽

pp. 1382-1391 ◽

Cited By ~ 189

Author(s):

Daniel F. Blossey

Keyword(s):

Electric Field ◽

Band Gap ◽

Direct Band Gap ◽

Direct Band

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A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells

Journal of Materials Chemistry A ◽

10.1039/c9ta01219b ◽

2019 ◽

Vol 7 (18) ◽

pp. 11265-11271 ◽

Cited By ~ 14

Author(s):

Yuliang Mao ◽

Congsheng Xu ◽

Jianmei Yuan ◽

Hongquan Zhao

Keyword(s):

First Principles ◽

High Performance ◽

Band Alignment ◽

Thin Film Solar Cells ◽

Photoelectric Conversion Efficiency ◽

Type Ii ◽

First Principles Calculations ◽

Photoelectric Conversion ◽

Direct Band Gap ◽

Direct Band

Based on first-principles calculations, we demonstrated that a GeSe/SnSe heterostructure has a type-II band alignment and a direct band gap. The predicted photoelectric conversion efficiency (PCE) for the GeSe/SnSe heterostructure reaches 21.47%.

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