Giant Out-of-Plane Spin Component and the Asymmetry of Spin Polarization in Surface Rashba States of Bismuth Thin Film

2011 ◽  
Vol 106 (16) ◽  
Author(s):  
A. Takayama ◽  
T. Sato ◽  
S. Souma ◽  
T. Takahashi
Keyword(s):  
Thin Film ◽  
Spin Polarization ◽  
Spin Component ◽  
Out Of Plane ◽  
The Asymmetry

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

In-plane versus out-of-plane dielectric response in the thin-film relaxorPb(Sc1∕2Ta1∕2)O3

2006 ◽  
Vol 73 (21) ◽  
Author(s):  
K. Brinkman ◽  
A. Tagantsev ◽  
V. Sherman ◽  
D. Su ◽  
N. Setter
Keyword(s):  
Thin Film ◽  
Dielectric Response ◽  
Out Of Plane ◽  
Plane Versus

Epitaxial growth of La–Ca–Mn–O thin film on out-of-plane twinned LaAlO[sub 3]

2000 ◽  
Vol 18 (5) ◽  
pp. 2437 ◽  
Author(s):  
J.-H. Song ◽  
K. K. Kim ◽  
Y. J. Oh ◽  
H.-J. Jung ◽  
W. K. Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Epitaxial Growth ◽  
Out Of Plane

Ferroelectric Oxide Thin Film with an Out-of-Plane Electrical Conductivity

Nano Letters ◽  
2019 ◽  
Vol 20 (2) ◽  
pp. 1047-1053
Author(s):  
Tingting Yao ◽  
Yixiao Jiang ◽  
Chunlin Chen ◽  
Xuexi Yan ◽  
Ang Tao ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Oxide Thin Film ◽  
Out Of Plane ◽  
Ferroelectric Oxide

A In Situ Measuring Method for Stress Gradient of a MEMS Film

2009 ◽  
Vol 60-61 ◽  
pp. 357-360 ◽  
Author(s):  
Han Chen ◽  
Hua Rong ◽  
Ming Wang
Keyword(s):  
Thin Film ◽  
Circular Plate ◽  
Stress Gradient ◽  
Measuring Method ◽  
Mechanical Parameter ◽  
Curvature Radius ◽  
Mems Devices ◽  
Out Of Plane

The stress gradient of a deposited thin-film is a mechanical parameter that affects the performance of MEMS devices, so in-situ measuring stress gradient of a thin-film is great significant. A new in-situ measuring method based on a center-anchored circular plate is presented. The Mirau interferometer has been used to measure the out-of-plane height at the edge of circular plate, then the curvature radius of the plate and the stress gradient of the film can be calculated. The measuring method has been verified by CoventorWare. The accuracy of the presented measuring method is ideal. The advantages of the method also have been discussed.

Transparent Conducting Indium-Tin-Oxide Thin Film with Extremely Flatted Surface

2001 ◽  
Vol 666 ◽  
Author(s):  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Film Growth ◽  
Oxide Thin Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Out Of Plane ◽  
Key Factor ◽  
Surface Microstructures

ABSTRACTIndium-tin-oxide films were grown hetero-epitaxially on YSZ surface at a substrate temperature of 900 °C, and their surface microstructures were observed by using atomic force microscopy. ITO films grown on (111) surface of YSZ exhibited very high crystal quality; full width at half maximum of out-of-plane rocking curve was 54 second. The ITO was grown spirally, with flat terraces and steps corresponding to (222) plane spacing of 0.29 nm. Oxygen pressure during film growth is another key factor to obtain atomically flat surfaced ITO thin film.

Increasing the Efficiency of Water Splitting through Spin Polarization Using Cobalt Oxide Thin Film Catalysts

2020 ◽  
Vol 124 (41) ◽  
pp. 22610-22618 ◽  
Author(s):  
Supriya Ghosh ◽  
Brian P. Bloom ◽  
Yiyang Lu ◽  
Daniel Lamont ◽  
David H. Waldeck
Keyword(s):  
Thin Film ◽  
Cobalt Oxide ◽  
Water Splitting ◽  
Spin Polarization ◽  
Oxide Thin Film ◽  
Thin Film Catalysts

Optische Spin-Polarisation im Triplett-Zustand von Naphthalin

1969 ◽  
Vol 24 (6) ◽  
pp. 952-967 ◽  
Author(s):  
M. Schwöhrer ◽  
H. Slxl
Keyword(s):  
Triplet State ◽  
Spin Polarization ◽  
Rate Constants ◽  
Uv Light ◽  
Lattice Relaxation ◽  
Stimulated Emission ◽  
Spin Lattice Relaxation ◽  
Spin Component ◽  
Triplet States ◽  
Selection Rules

Naphthalene, which is excited into the lowest triplet state by unpolarized UV-Iight shows a strong deviation from the Boltzman distribution within the three magnetic sublevels, which is ob­served by ESR. We call this deviation optical spin polarization. In the mixed crystal C10D8: 0.2% C10H8 , where the undeuterated Naphthalene acts as trap at 4.2 °K, the optical spin polarization exceeds the thermal spin polarization such that a steady state inversion between two of the mag­netic sublevels appears. This results in an emissive ESR-transition (stimulated emission of micro- waves). The time dependence of the spin polarization after switching on or off the UV-light is described by a superposition of two exponential functions with different rate constants. - The optical spin polarization is due to spin selection rules for the intersystem crossing process (ISC). These involve primarily the molecular symmetry. - The experimental results of the present paper are these selection rules for the pumping processes: The metastable triplet state is populated via the spin component τx.The depopulation rate constants of the three spin components τx, τv and τz are kx = 0.65 sec-1, ky=0.4 sec-1 and kz=O.15 sec-1 .The spin lattice relaxation probabilities are of the order of 1 sec-1. The latter are dependent on the direction of the magnetic field and on the concentration of the populated triplet states. - These results are compared with a theory of ISC.

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