scholarly journals Generating a Topological Anomalous Hall Effect in a Nonmagnetic Conductor: An In-Plane Magnetic Field as a Direct Probe of the Berry Curvature

2021 ◽  
Vol 126 (25) ◽  
Author(s):  
James H. Cullen ◽  
Pankaj Bhalla ◽  
E. Marcellina ◽  
A. R. Hamilton ◽  
Dimitrie Culcer
2019 ◽  
Vol 5 (1) ◽  
Author(s):  
Hua Wang ◽  
Xiaofeng Qian

AbstractUnder broken time reversal symmetry such as in the presence of external magnetic field or internal magnetization, a transverse voltage can be established in materials perpendicular to both longitudinal current and applied magnetic field, known as classical Hall effect. However, this symmetry constraint can be relaxed in the nonlinear regime, thereby enabling nonlinear anomalous Hall current in time-reversal invariant materials – an underexplored realm with exciting new opportunities beyond classical linear Hall effect. Here, using group theory and first-principles theory, we demonstrate a remarkable ferroelectric nonlinear anomalous Hall effect in time-reversal invariant few-layer WTe2 where nonlinear anomalous Hall current switches in odd-layer WTe2 except 1T′ monolayer while remaining invariant in even-layer WTe2 upon ferroelectric transition. This even-odd oscillation of ferroelectric nonlinear anomalous Hall effect was found to originate from the absence and presence of Berry curvature dipole reversal and shift dipole reversal due to distinct ferroelectric transformation in even and odd-layer WTe2. Our work not only treats Berry curvature dipole and shift dipole on an equal footing to account for intraband and interband contributions to nonlinear anomalous Hall effect, but also establishes Berry curvature dipole and shift dipole as new order parameters for noncentrosymmetric materials. The present findings suggest that ferroelectric metals and Weyl semimetals may offer unprecedented opportunities for the development of nonlinear quantum electronics.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.


2021 ◽  
pp. 2006301
Author(s):  
Satya N. Guin ◽  
Qiunan Xu ◽  
Nitesh Kumar ◽  
Hsiang‐Hsi Kung ◽  
Sydney Dufresne ◽  
...  

2019 ◽  
pp. 1800818 ◽  
Author(s):  
Yunfeng You ◽  
Xianzhe Chen ◽  
Xiaofeng Zhou ◽  
Youdi Gu ◽  
Ruiqi Zhang ◽  
...  

2019 ◽  
Vol 100 (5) ◽  
Author(s):  
Benedikt Ernst ◽  
Roshnee Sahoo ◽  
Yan Sun ◽  
Jayita Nayak ◽  
Lukas Müchler ◽  
...  

Author(s):  
Danica Krstovska ◽  
Eden Steven ◽  
Andhika Kiswandhi ◽  
James S. Brooks

We find that the Hall effect in a single crystal of UCoGe varies as a function of the angle  between the applied magnetic field and the easy magnetic axis up to fields of 18 T at 0.2 K, i.e. in the region where both superconductivity and ferromagnetic order coexist. Instead of following the conventional cos dependence the two components that com-prise the total Hall resistance, the anomalous and ordinary Hall effect, exhibit quite an unusual behavior with the field direction. The anomalous Hall effect is found to be determined by the parallel component of the magnetization. We sug-gest that the field induced changes in magnetization due to the field rotation play an important role in the observed unu-sual behavior. The ordinary Hall effect cannot be described by the simple relation to the perpendicular component of the magnetic field implying that this component of the Hall effect may be also affected by the variations in magnetization at the characteristic field (kink field). A field induced moment polarization is also observed in Hall effect as in magnetore-sistance, which advances previous findings in UCoGe. The Hall effect slope reverses sign at the kink field indicative of small but possible Fermi surface reconstruction around this field. Our findings show that in UCoGe multiple mecha-nisms contribute to the observed field induced moment polarization at the kink field.


2013 ◽  
Vol 1 (1) ◽  
pp. 38-48 ◽  
Author(s):  
Ke He ◽  
Yayu Wang ◽  
Qi-Kun Xue

Abstract Hall effect is a well-known electromagnetic phenomenon that has been widely applied in the semiconductor industry. The quantum Hall effect discovered in two-dimensional electronic systems under a strong magnetic field provided new insights into condensed matter physics, especially the topological aspect of electronic states. The quantum anomalous Hall effect is a special kind of the quantum Hall effect that occurs without a magnetic field. It has long been sought after because its realization will significantly facilitate the studies and applications of the quantum Hall physics. In this paper, we review how the idea of the quantum anomalous Hall effect was developed and how the effect was finally experimentally realized in thin films of a magnetically doped topological insulator.


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