Theory of the Effects of Rapid Thermal Annealing on Thin-Film Crystallization

1995 ◽  
Vol 74 (19) ◽  
pp. 3848-3851 ◽  
Author(s):  
E. K. F. Dang ◽  
R. J. Gooding
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Endurance improvement due to rapid thermal annealing (RTA) of a TaO x thin film in an oxygen ambient

2015 ◽  
Vol 66 (5) ◽  
pp. 721-725 ◽  
Author(s):  
Junghyup Hong ◽  
Woochool Jang ◽  
Hyoseok Song ◽  
Chunho Kang ◽  
Hyeongtag Jeon
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

The effects of rapid thermal annealing on the performance of ZnO thin-film transistors

2009 ◽  
Vol 55 (5(1)) ◽  
pp. 1925-1930 ◽  
Author(s):  
Duck-Kyun Choi ◽  
Chan Jun Park ◽  
Sung Bo Lee ◽  
Young-Woong Kim
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Zno Thin Film

Rutile TiO2 active-channel thin-film transistor using rapid thermal annealing

2014 ◽  
Vol 65 (7) ◽  
pp. 1118-1121 ◽  
Author(s):  
Sung-Jin Kim ◽  
Kwan-Jun Heo ◽  
Su Chang Yoo ◽  
Seong Gon Choi ◽  
Seung Wook Chang
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistor ◽  
Rutile Tio2 ◽  
Active Channel

Effects of rapid thermal annealing (RTA) process on pysical and electrical properties of Bi4La4-xTi3O12 (BLT) thin film

2001 ◽  
Vol 39 (1-4) ◽  
pp. 151-159 ◽  
Author(s):  
Woo Seok Yang ◽  
Nam Kyeong Kim ◽  
Seung Jin Yeom ◽  
Soon Yong Kweon ◽  
Eun Seok Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Crystallization of Hydrogenated Amorphous Silicon by Rapid Thermal Method

2010 ◽  
Vol 428-429 ◽  
pp. 444-446 ◽  
Author(s):  
Rui Min Jin ◽  
Ding Zhen Li ◽  
Lan Li Chen ◽  
Xin Feng Guo ◽  
Jing Xiao Lu
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Raman Spectra ◽  
Rapid Thermal Annealing ◽  
Glass Substrate ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Method ◽  
Hydrogenated Amorphous ◽  
Electronic Microscope

Amorphous silicon films prepared by PECVD on silex glass substrate has been crystallized by rapid thermal annealing (RTA), From the Raman spectra and scanning electronic microscope (SEM), it was found that the Raman spectra wa best crystallized at 950°C for 5 min. The thin film made by RTA was smoothly and perfect structure.

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