Endurance improvement due to rapid thermal annealing (RTA) of a TaO x thin film in an oxygen ambient

2015 ◽  
Vol 66 (5) ◽  
pp. 721-725 ◽  
Author(s):  
Junghyup Hong ◽  
Woochool Jang ◽  
Hyoseok Song ◽  
Chunho Kang ◽  
Hyeongtag Jeon
2009 ◽  
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Duck-Kyun Choi ◽  
Chan Jun Park ◽  
Sung Bo Lee ◽  
Young-Woong Kim

2014 ◽  
Vol 65 (7) ◽  
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Sung-Jin Kim ◽  
Kwan-Jun Heo ◽  
Su Chang Yoo ◽  
Seong Gon Choi ◽  
Seung Wook Chang

2001 ◽  
Vol 39 (1-4) ◽  
pp. 151-159 ◽  
Author(s):  
Woo Seok Yang ◽  
Nam Kyeong Kim ◽  
Seung Jin Yeom ◽  
Soon Yong Kweon ◽  
Eun Seok Choi ◽  
...  

2010 ◽  
Vol 428-429 ◽  
pp. 444-446 ◽  
Author(s):  
Rui Min Jin ◽  
Ding Zhen Li ◽  
Lan Li Chen ◽  
Xin Feng Guo ◽  
Jing Xiao Lu

Amorphous silicon films prepared by PECVD on silex glass substrate has been crystallized by rapid thermal annealing (RTA), From the Raman spectra and scanning electronic microscope (SEM), it was found that the Raman spectra wa best crystallized at 950°C for 5 min. The thin film made by RTA was smoothly and perfect structure.


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