Oxide phosphor thin-film electroluminescent devices fabricated by magnetron sputtering with rapid thermal annealing

2001 ◽  
Vol 19 (4) ◽  
pp. 1742-1746 ◽  
Author(s):  
Tadatsugu Minami ◽  
Hidenobu Toda ◽  
Toshihiro Miyata
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electroluminescent Devices

scholarly journals Influence of Annealing Temperature on the Characteristics of Ti-Codoped GZO Thin Solid Film

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Tao-Hsing Chen ◽  
Tzu-Yu Liao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering

This study utilizes radio frequency magnetron sputtering (RF sputtering) to deposit GZO transparent conductive film and Ti thin film on the same corning glass substrate and then treats GZO/Ti thin film with rapid thermal annealing. The annealing temperatures are 300°C , 500°C, and 550°C, respectively. Ti:GZO transparent conductive oxide (TCO) thin films are deposited on glass substrates using a radio frequency magnetron sputtering technique. The thin films are then annealed at temperatures of 300°C, 500°C, and 550°C, respectively, for rapid thermal annealing. The effects of the annealing temperature on the optical properties, resistivity, and nanomechanical properties of the Ti:GZO thin films are then systematically explored. The results show that all of the annealed films have excellent transparency (~90%) in the visible light range. Moreover, the resistivity of the Ti:GZO films reduces with an increasing annealing temperature, while the carrier concentration and Hall mobility both increase. Finally, the hardness and Young’s modulus of the Ti:GZO thin films are both found to increase as the annealing temperature is increased.

Endurance improvement due to rapid thermal annealing (RTA) of a TaO x thin film in an oxygen ambient

2015 ◽  
Vol 66 (5) ◽  
pp. 721-725 ◽  
Author(s):  
Junghyup Hong ◽  
Woochool Jang ◽  
Hyoseok Song ◽  
Chunho Kang ◽  
Hyeongtag Jeon
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

The effects of rapid thermal annealing on the performance of ZnO thin-film transistors

2009 ◽  
Vol 55 (5(1)) ◽  
pp. 1925-1930 ◽  
Author(s):  
Duck-Kyun Choi ◽  
Chan Jun Park ◽  
Sung Bo Lee ◽  
Young-Woong Kim
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Zno Thin Film
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