scholarly journals First-order amorphous-to-amorphous phase transitions during lithiation of silicon thin films

2020 ◽  
Vol 4 (4) ◽  
Author(s):  
Jinghui Miao ◽  
Baoming Wang ◽  
Carl V. Thompson
Keyword(s):  
Thin Films ◽  
Phase Transitions ◽  
Amorphous Phase ◽  
First Order ◽  
Silicon Thin Films

Two Species/Nonideal Solution Model for Amorphous/Amorphous Phase Transitions

1996 ◽  
Vol 455 ◽  
Author(s):  
Cornelius T. Moynihan
Keyword(s):  
Phase Transition ◽  
Phase Transitions ◽  
Critical Temperature ◽  
Amorphous Phase ◽  
Thermodynamic Model ◽  
Critical Pressure ◽  
Solution Model ◽  
Amorphous Phases ◽  
First Order ◽  
Temperature And Pressure

ABSTRACTA simple macroscopic thermodynamic model for first order transitions between two amorphous phases in a one component liquid is reviewed, augmented and evaluated. The model presumes the existence in the liquid of two species, whose concentrations are temperature and pressure dependent and which form a solution with large, positive deviations from ideality. Application of the model to recent data indicates that water can undergo an amorphous/amorphous phase transition below a critical temperature Tc of 217K and above a critical pressure Pc of 380 atm.

First-order magnetic phase transitions in thin films

JETP Letters ◽  
2006 ◽  
Vol 83 (2) ◽  
pp. 79-82
Author(s):  
J. -P. Ader ◽  
A. I. Buzdin
Keyword(s):  
Thin Films ◽  
Phase Transitions ◽  
Magnetic Phase ◽  
Magnetic Phase Transitions ◽  
First Order

Shift of first‐order phase transitions in thin films due to boundary fields: A computer simulation

1989 ◽  
Vol 91 (6) ◽  
pp. 3700-3706 ◽  
Author(s):  
E. V. Albano ◽  
K. Binder ◽  
D. W. Heermann ◽  
W. Paul
Keyword(s):  
Thin Films ◽  
Computer Simulation ◽  
Phase Transitions ◽  
First Order ◽  
Boundary Fields ◽  
First Order Phase

scholarly journals Polarization Switching in Ferroelectric Thin Films Undergoing First-Order Phase Transitions

2010 ◽  
Vol 2010 ◽  
pp. 1-8
Author(s):  
L. A. Bakaleinikov ◽  
A. Gordon
Keyword(s):  
Thin Films ◽  
Phase Transitions ◽  
Short Range ◽  
Dipole Interaction ◽  
Pyroelectric Coefficient ◽  
Ferroelectric Thin Films ◽  
Two Dimensional ◽  
Switching Rate ◽  
First Order ◽  
First Order Phase

The main switching properties in ferroelectrics undergoing first-order phase transitions are simulated within the framework of the extended Ishibashi dipole-lattice model including the dipole-dipole interaction in a two-dimensional case for ferroelectric nanoscale objects. The peculiarities of the temperature dependence of the switching rate and the pyroelectric coefficient are discussed in the range of coexistence of the metastable states. The used coefficients of the long-range and short-range interactions between the dipoles are taken from the dielectric and structure measurements inBaTiO3.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

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