Structural properties of molecular beam epitaxy grown Ni/Pt superlattices

1997 ◽  
Vol 12 (1) ◽  
pp. 161-174 ◽  
Author(s):  
W. Staiger ◽  
A. Michel ◽  
V. Pierron-Bohnes ◽  
N. Hermann ◽  
M. C. Cadeville
Keyword(s):  
Molecular Beam ◽  
Growth Direction ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Superlattice Peak ◽  
Diffraction Peaks ◽  
Diffraction Patterns

We find that the [Ni3.2nmPt1.6nm] × 15 and [Ni3.2nmPt0.8nm] × 15 multilayers are semicoherent and display a columnar morphology. From both the period of the moir’e fringes and the positions of the diffraction peaks in electronic (plan-view and crosssection geometries) and x-ray diffraction patterns, one deduces that the nickel is relaxed (at least in the error bars of all our measurements), whereas the platinum remains slightly strained (≈−1%). The interfaces are sharp; no intermixing takes place giving rise to neat contrasts in transmission electron microscopy (TEM) and to high intensities of the superlattice peaks in the growth direction in both diffraction techniques. The relaxation of the interfacial misfit occurs partially through misfit dislocations, partially through the strain of platinum. A quasiperiodic twinning occurs at the interfaces, the stacking fault which forms the twin being the most often located at the interface Pt/Ni, i.e., when a Pt layer begins to grow on the Ni layer. The simulation of the θ/2θ superlattice peak intensities takes into account the columnar microstructure. It shows that the roughness is predominantly at medium scale with a fluctuation of about 12.5% for Ni layers and negligible for Pt layers.

TEM and XRD Investigation of MnO2 Microstructure and its Influence on ESR of Ta Capacitors

2006 ◽  
Vol 514-516 ◽  
pp. 269-273
Author(s):  
Décio Dias ◽  
Rui Monteiro ◽  
Patrícia Almeida Carvalho ◽  
Alberto C. Ferro ◽  
Werner Lohwasser
Keyword(s):  
Complex Structure ◽  
Semiconductor Layer ◽  
Equivalent Series Resistance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Equivalent Circuit Parameters ◽  
Diffraction Peaks ◽  
Diffraction Patterns

The development of solid electrolytic tantalum capacitors with MnO2 as counter electrode has been carried out in order to decrease the equivalent series resistance (ESR). Capacitor samples produced under different pyrolysis conditions have been characterized in terms of equivalent circuit parameters. The Ta/Ta2O5/MnO2 system has also been characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). X-ray powder diffraction patterns obtained were inconclusive due to the MnO2 complex structure and to the presence of highly intense tantalum peaks that shadow interesting MnO2 diffraction peaks. Electron diffraction TEM results enabled the characterization of the microstructure and furthermore revealed the complex crystalline structure that affects the electrical properties of the semiconductor layer. A relation between the calculated circuit parameters and microstructure of MnO2 is discussed.

The Effect of the Microstructure of Diffusion Barriers on the Palladium Activation for Electroless Copper Deposition

2002 ◽  
Vol 716 ◽  
Author(s):  
Seok Woo Hong ◽  
Yong Sun Lee ◽  
Ki-Chul Park ◽  
Jong-Wan Park
Keyword(s):  
Electron Microscopy ◽  
Diffusion Barriers ◽  
Copper Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Electroless Copper ◽  
Sheet Resistance Measurement ◽  
Scanning Electron

AbstractThe effect of microstructure of dc magnetron sputtered TiN and TaN diffusion barriers on the palladium activation for autocatalytic electroless copper deposition has been investigated by using X-ray diffraction, sheet resistance measurement, field emission scanning electron microscopy (FE-SEM) and plan view transmission electron microscopy (TEM). The density of palladium nuclei on TaN diffusion barrier increases as the grain size of TaN films decreases, which was caused by increasing nitrogen content in TaN films. Plan view TEM results of TiN and TaN diffusiton barriers showed that palladium nuclei formed mainly on the grain boundaries of the diffusion barriers.

Control of the phase composition of advanced calcium phosphates using an x-ray diffractometer with a curved position-sensitive detector

2020 ◽  
Vol 86 (6) ◽  
pp. 29-35
Author(s):  
V. P. Sirotinkin ◽  
O. V. Baranov ◽  
A. Yu. Fedotov ◽  
S. M. Barinov
Keyword(s):  
Phase Composition ◽  
Calcium Phosphates ◽  
Position Sensitive Detector ◽  
Sensitive Detector ◽  
X Ray Diffraction ◽  
X Ray ◽  
Impurity Phases ◽  
Position Sensitive ◽  
Diffraction Peaks ◽  
Diffraction Patterns

The results of studying the phase composition of advanced calcium phosphates Ca10(PO4)6(OH)2, β-Ca3(PO4)2, α-Ca3(PO4)2, CaHPO4 · 2H2O, Ca8(HPO4)2(PO4)4 · 5H2O using an x-ray diffractometer with a curved position-sensitive detector are presented. Optimal experimental conditions (angular positions of the x-ray tube and detector, size of the slits, exposure time) were determined with allowance for possible formation of the impurity phases during synthesis. The construction features of diffractometers with a position-sensitive detector affecting the profile characteristics of x-ray diffraction peaks are considered. The composition for calibration of the diffractometer (a mixture of sodium acetate and yttrium oxide) was determined. Theoretical x-ray diffraction patterns for corresponding calcium phosphates are constructed on the basis of the literature data. These x-ray diffraction patterns were used to determine the phase composition of the advanced calcium phosphates. The features of advanced calcium phosphates, which should be taken into account during the phase analysis, are indicated. The powder of high-temperature form of tricalcium phosphate strongly adsorbs water from the environment. A strong texture is observed on the x-ray diffraction spectra of dicalcium phosphate dihydrate. A rather specific x-ray diffraction pattern of octacalcium phosphate pentahydrate revealed the only one strong peak at small angles. In all cases, significant deviations are observed for the recorded angular positions and relative intensity of the diffraction peaks. The results of the study of experimentally obtained mixtures of calcium phosphate are presented. It is shown that the graphic comparison of experimental x-ray diffraction spectra and pre-recorded spectra of the reference calcium phosphates and possible impurity phases is the most effective method. In this case, there is no need for calibration. When using this method, the total time for analysis of one sample is no more than 10 min.

Cetyltrimethylammonium bromide- and ethylene glycol-assisted preparation of mono-dispersed indium oxide nanoparticles using hydrothermal method

2014 ◽  
Vol 68 (8) ◽  
Author(s):  
Selvakumar Dhanasingh ◽  
Dharmaraj Nallasamy ◽  
Saravanan Padmanapan ◽  
Vinod Padaki
Keyword(s):  
Ethylene Glycol ◽  
Hydrothermal Method ◽  
Indium Oxide ◽  
Cetyltrimethylammonium Bromide ◽  
Oxide Nanoparticles ◽  
X Ray Diffraction ◽  
Hydrothermal Conditions ◽  
X Ray ◽  
Transmission Electron ◽  
Diffraction Patterns

AbstractThe influence of cetyltrimethylammonium bromide and ethylene glycol on the size and dispersion of indium oxide nanoparticles prepared under hydrothermal conditions was investigated. The precursor compound, indium hydroxide, obtained by the hydrothermal method in the absence as well as the presence of cetyltrimethylammonium bromide, was converted to indium oxide by sintering at 400°C. The formation of nanoscale indium oxide upon sintering was ascertained by the characteristic infrared adsorption bands and X-ray diffraction patterns of indium oxide. Transmission electron microscopy and band gap values confirmed that the cetyltrimethylammonium bromide facilitated the formation of indium oxide nanoparticles smaller in size and narrower in distribution than those prepared without the assistance of cetyltrimethylammonium bromide.

Facile Refluxing Synthesis of Hydroxyapatite Nanoparticles

2015 ◽  
Vol 68 (8) ◽  
pp. 1293 ◽  
Author(s):  
Pakvipar Chaopanich ◽  
Punnama Siriphannon
Keyword(s):  
Crystallite Size ◽  
Reaction Times ◽  
Single Step ◽  
Hydroxyapatite Nanoparticles ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Aqueous Mixture ◽  
Diffraction Patterns ◽  
Microscopy Images

Hydroxyapatite (HAp) nanoparticles were successfully synthesized from an aqueous mixture of Ca(NO3)2·4H2O and (NH4)2HPO4 by a facile single-step refluxing method using polystyrene sulfonate (PSS) as a template. The effects of reaction times, pH, and PSS concentration on the HAp formation were investigated. It was found that the crystalline HAp was obtained under all conditions after refluxing the precursors for 3 and 6 h. The longer refluxing time, the greater the crystallinity and the larger the crystallite size of the HAp nanoparticles. The HAp with poor crystallinity was obtained at pH 8.5; however, the well-crystallized HAp was obtained when reaction pH was increased to 9.5 and 10.5. In addition, the X-ray diffraction patterns revealed that the presence of PSS template caused the reduction of HAp crystallite size along the (002) plane from 52.6 nm of non-template HAp to 43.4 nm and 41.4 nm of HAp with 0.05 and 0.2 wt-% PSS template, respectively. Transmission electron microscopy images of the synthesized HAp revealed the rod-shaped crystals of all samples. The synthesized HAp nanoparticles were modified by l-aspartic acid (Asp) and l-arginine (Arg), having negative and positive charges, respectively. It was found that the zeta potential of HAp was significantly changed from +5.46 to –24.70 mV after modification with Asp, whereas it was +4.72 mV in the Arg-modified HAp. These results suggested that the negatively charged amino acid was preferentially adsorbed onto the synthesized HAp surface.

Effects of Surface Energy on the Microstructures of Thin Sb Films

1990 ◽  
Vol 202 ◽  
Author(s):  
L. H. Chou ◽  
M. C. Kuo
Keyword(s):  
Electron Microscopy ◽  
Surface Energy ◽  
Grain Growth ◽  
Grain Orientation ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Diffraction Peaks

ABSTRACTThin Sb films have been prepared on glass substrates by rapid thermal evaporation. Films with thicknesses varied from 260 Å to 1300Å were used for the study. X-ray diffraction data showed that for films deposited at room substrate temperature, an almost random grain orientation was observed for films of 1300 Å thick and a tendency for preferred grain orientation was observed as films got thinner. For films of 260 Å thick, only two x-ray diffraction peaks--(003) and (006) were observed. After thermal annealing, secondary grains grew to show preferred orientation in all the films. This phenomenon was explained by surface-energy-driven secondary grain growth. This paper reports the effects of annealing time and film thickness on the secondary grain growth and the evolution of thin Sb film microstmctures. Transmission electron microscopy (TEM) and x-ray diffraction were used to characterize the films.

Sb-rich nanoinclusions in an AlGaAsSb metamaterial

MRS Advances ◽  
2019 ◽  
Vol 4 (5-6) ◽  
pp. 277-284
Author(s):  
Nikolay A. Bert ◽  
Vladimir V. Chaldyshev ◽  
Nikolay A. Cherkashin ◽  
Vladimir N. Nevedomskiy ◽  
Valery V. Preobrazhenskii ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Filling Factor ◽  
Local Thermodynamic Equilibrium ◽  
Average Diameter ◽  
Formation Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Organized ◽  
Transmission Electron ◽  
The Matrix

ABSTRACTWe studied the microstructure of Al0.28Ga0.72As0.972Sb0.028 metamaterials containing a developed array of AsSb nanoinclusions. The AlGaAsSb films were grown by low-temperature molecular-beam epitaxy followed by high-temperature annealing at 750°C. The process resulted in an array of self-organized AsSb nanonclusions with an average diameter of 15 nm. The volume filling factor was about 0.003. Using transmission electron microscopy and x-ray diffraction we showed that the nanoinclusions have A7-type rhombohedral atomic structure with the following orientation in the matrix (0003)p || {111}m and [-2110]p || 〈220〉m, where p and m indices indicate the AsSb precipitate and AlGaAsSb matrix, correspondingly. The nanoinclusions appeared to be strongly enriched by antimony (more than 90 atomic %), whereas the Sb content in the AlGaAsSb matrix was 2.8 atomic %. The strong enrichment of the inclusion with Sb resulted from the local thermodynamic equilibrium between the solid AlGaAsSb matrix and AsSb inclusions which became liquid at a formation temperature of 750°C.

Growth of epitaxial ZnO films on Si(111)

2002 ◽  
Vol 722 ◽  
Author(s):  
Chunming Jin ◽  
Ashutosh Tiwari ◽  
A. Kvit ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transparent Conducting Oxide ◽  
Deposition Process ◽  
Growth Direction ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Transmission Electron ◽  
Aln Buffer

AbstractEpitaxial ZnO films have been grown on Si(111) substrates by employing a AlN buffer layer during a pulsed laser-deposition process. The epitaxial structure of AlN on Si(111) substrate provides a template for ZnO growth. The resultant films are evaluated by transmission electron microscopy, x-ray diffraction, and electrical measurements. The results of x-ray diffraction and electron microscopy on these films clearly show the epitaxial growth of ZnO films with an orientational relationship of ZnO[0001]||Aln[0001]||Si[111] along the growth direction and ZnO[2 11 0]||AlN[2 11 0]||Si[0 11] along the in-plane direction. High electrical conductivity (103 S/m at 300 K) and a linear I-V characteristics make these epitaxial films ideal for microelectronic, optoelectronic, and transparent conducting oxide applications.

Type II Dislocation Loops and their Effect on Strain in Ion Implanted Silicon as Studied by High Resolution X-ray Diffraction

1995 ◽  
Vol 378 ◽  
Author(s):  
R. H. Thompson ◽  
V. Krishnamoorthy ◽  
J. Liu ◽  
K. S. Jones
Keyword(s):  
High Resolution ◽  
Type Ii ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
Empirical Constant ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Measured Strain ◽  
P Type

AbstractP-type (100) silicon wafers were implanted with 28Si+ ions at an energy of 50 keV and to doses of 1 × 1015, 5 × 1015 and 1 × 1016 cm−2, respectively, and annealed in a N2 ambient at temperatures ranging from 700°C to 1000°C for times ranging from 15 minutes to 16 hours. The resulting microstructure consisted of varying distributions of Type II end of range dislocation loops. The size distribution of these loops was quantified using plan-view transmission electron microscopy and the strain arising from these loops was investigated using high resolution x-ray diffraction. The measured strain values were found to be constant in the loop coarsening regime wherein the number of atoms bound by the loops remained a constant. Therefore, an empirical constant of 7.7 × 10−12 interstitial/ppm of strain was evaluated to relate the number of interstitials bound by these dislocation loops and the strain. This value was used successfully in estimating the number of interstitials bound by loops at the various doses studied provided the annealing conditions were such that the loop microstructure was in the coarsening or dissolution regime.

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