scholarly journals A multivariate grain size and orientation distribution function: derivation from electron backscatter diffraction data and applications

2021 ◽  
Vol 54 (1) ◽  
Author(s):  
Jesús Galán López ◽  
Leo A. I. Kestens

Two of the microstructural parameters most influential in the properties of polycrystalline materials are grain size and crystallographic texture. Although both properties have been extensively studied and there are a wide range of analysis tools available, they are generally considered independently, without taking into account the possible correlations between them. However, there are reasons to assume that grain size and orientation are correlated microstructural state variables, as they are the result of single microstructural formation mechanisms occurring during material processing. In this work, the grain size distribution and orientation distribution functions are combined in a single multivariate grain size orientation distribution function (GSODF). In addition to the derivation of the function, several examples of practical applications to low carbon steels are presented, in which it is shown how the GSODF can be used in the analysis of 2D and 3D electron backscatter diffraction data, as well as in the generation of representative volume elements for full-field models and as input in simulations using mean-field methods.

2011 ◽  
Vol 702-703 ◽  
pp. 165-168 ◽  
Author(s):  
Aicha Loucif ◽  
Thierry Baudin ◽  
François Brisset ◽  
Roberto B. Figueiredo ◽  
Rafik Chemam ◽  
...  

This investigation uses electron backscatter diffraction (EBSD) to study the development of microtexture with increasing deformation in an AlMgSi alloy having an initial grain size of about 150 µm subjected to high pressure torsion (HPT) up to a total of 5 turns. An homogeneous microstructure was achieved throughout the disc sample at high strains with the formation of ultra-fine grains. Observations based on orientation distribution function (ODF) calculation reveals the presence of the torsion texture components often reported in the literature for f.c.c. materials. In particular, the C {001}<110> component was found to be dominant. Furthermore, no significant change in the texture sharpness was observed by increasing the strain.


2013 ◽  
Vol 19 (S4) ◽  
pp. 103-104
Author(s):  
C.B. Garcia ◽  
E. Ariza ◽  
C.J. Tavares

Zinc Oxide is a wide band-gap compound semiconductor that has been used in optoelectronic and photovoltaic applications due to its good electrical and optical properties. Aluminium has been an efficient n-type dopant for ZnO to produce low resistivity films and high transparency to visible light. In addition, the improvement of these properties also depends on the morphology, crystalline structure and deposition parameters. In this work, ZnO:Al films were produced by d.c. pulsed magnetron sputtering deposition from a ZnO ceramic target (2.0 wt% Al2O3) on glass substrates, at a temperature of 250 ºC.The crystallographic orientation of aluminum doped zinc oxide (ZnO:Al) thin films has been studied by Electron Backscatter Diffraction (EBSD) technique. EBSD coupled with Scanning Electron Microscopy (SEM) is a powerful tool for the microstructural and crystallographic characterization of a wide range of materials.The investigation by EBSD technique of such films presents some challenges since this analysis requires a flat and smooth surface. This is a necessary condition to avoid any shadow effects during the experiments performed with high tilting conditions (70º). This is also essential to ensure a good control of the three dimensional projection of the crystalline axes on the geometrical references related to the sample.Crystalline texture is described by the inverse pole figure (IPF) maps (Figure 1). Through EBSD analysis it was observed that the external surface of the film presents a strong texture on the basal plane orientation (grains highlighted in red colour). Furthermore it was possible to verify that the grain size strongly depends on the deposition time (Figure 1 (a) and (b)). The electrical and optical film properties improve with increasing of the grain size, which can be mainly, attributed to the decrease in scattering grain boundaries which leads to an increasing in carrier mobility (Figure 2).The authors kindly acknowledge the financial support from the Portuguese Foundation for Science and Technology (FCT) scientific program for the National Network of Electron Microscopy (RNME) EDE/1511/RME/2005.


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