grain size and orientation
Recently Published Documents


TOTAL DOCUMENTS

49
(FIVE YEARS 9)

H-INDEX

12
(FIVE YEARS 2)

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3312
Author(s):  
Jakob Grasserbauer ◽  
Irmgard Weißensteiner ◽  
Georg Falkinger ◽  
Peter J. Uggowitzer ◽  
Stefan Pogatscher

In recent decades, microstructure and texture engineering has become an indispensable factor in meeting the rising demands in mechanical properties and forming behavior of aluminum alloys. Alloying elements, such as Fe and Mn in AlMg(Mn) alloys, affect the number density, size and morphology of both the primary and secondary phases, thus altering the grain size and orientation of the final annealed sheet by Zener pinning and particle stimulated nucleation (PSN). The present study investigates the grain size and texture of four laboratory processed AlMg(Mn) alloys with various Fe and Mn levels (see Part I). Common models for deriving the Zener-limit grain size are discussed in the light of the experimental data. The results underline the significant grain refinement by dispersoids in high Mn alloys and show a good correlation with the Smith–Zener equation, when weighting the volume fraction of the dispersoids with an exponent of 0.33. Moreover, for high Fe alloys a certain reduction in the average grain size is obtained due to pinning effects and PSN of coarse primary phases. The texture analysis focuses on characteristic texture transformations occurring with pinning effects and PSN. However, the discussion of the texture and typical PSN components is only possible in terms of trends, as all alloys exhibit an almost random distribution of orientations.


2021 ◽  
Vol 54 (1) ◽  
Author(s):  
Jesús Galán López ◽  
Leo A. I. Kestens

Two of the microstructural parameters most influential in the properties of polycrystalline materials are grain size and crystallographic texture. Although both properties have been extensively studied and there are a wide range of analysis tools available, they are generally considered independently, without taking into account the possible correlations between them. However, there are reasons to assume that grain size and orientation are correlated microstructural state variables, as they are the result of single microstructural formation mechanisms occurring during material processing. In this work, the grain size distribution and orientation distribution functions are combined in a single multivariate grain size orientation distribution function (GSODF). In addition to the derivation of the function, several examples of practical applications to low carbon steels are presented, in which it is shown how the GSODF can be used in the analysis of 2D and 3D electron backscatter diffraction data, as well as in the generation of representative volume elements for full-field models and as input in simulations using mean-field methods.


2021 ◽  
Vol 41 (1) ◽  
pp. 617-624 ◽  
Author(s):  
Rohit Pratyush Behera ◽  
Syafiq Bin Senin Muhammad ◽  
Marcus He Jiaxuan ◽  
Hortense Le Ferrand

2020 ◽  
Vol 167 ◽  
pp. 110496
Author(s):  
Lei Zhao ◽  
Mengna Zhang ◽  
Jinhui Wang ◽  
Bo Shi ◽  
Peipeng Jin

Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 399 ◽  
Author(s):  
Wei Zhang ◽  
Mitsue Takahashi ◽  
Shigeki Sakai

Electron backscatter diffraction (EBSD) was applied to investigate the grain size and orientation of polycrystalline CaxSr1–xBi2Ta2O9 (CxS1–xBT) films in ferroelectric-gate field-effect transistors (FeFETs). The CxS1–xBT FeFETs with x = 0, 0.1, 0.2, 0.5, and 1 were characterized by the EBSD inverse pole figure map. The maps of x = 0, 0.1, and 0.2 showed more uniform and smaller grains with more inclusion of the a-axis component along the film normal than the maps of x = 0.5 and 1. Since spontaneous polarization of CxS1–xBT is expected to exist along the a-axis, inclusion of the film normal a-axis component is necessary to obtain polarization versus electric field (P–E) hysteresis curves of the CxS1–xBT when the E is applied across the film. Since memory windows of FeFETs originate from P–E hysteresis curves, the EBSD results were consistent with the electrical performance of the FeFETs, where the FeFETs with x = 0, 0.1, and 0.2 had wider memory windows than those with x = 0.5 and 1. The influence of annealing temperature for C0.1S0.9BT poly-crystallization was also investigated using the EBSD method.


Sign in / Sign up

Export Citation Format

Share Document