scholarly journals Application of Electron Backscatter Diffraction (EBSD) for Crystallographic Characterization of Aluminum-Doped Zinc Oxide Sputtered Films

2013 ◽  
Vol 19 (S4) ◽  
pp. 103-104
Author(s):  
C.B. Garcia ◽  
E. Ariza ◽  
C.J. Tavares
Keyword(s):  
Electron Microscopy ◽  
Grain Size ◽  
Zinc Oxide ◽  
Electron Backscatter Diffraction ◽  
Wide Range ◽  
Electron Backscatter ◽  
Aluminum Doped Zinc Oxide ◽  
Ebsd Technique ◽  
Backscatter Diffraction

Zinc Oxide is a wide band-gap compound semiconductor that has been used in optoelectronic and photovoltaic applications due to its good electrical and optical properties. Aluminium has been an efficient n-type dopant for ZnO to produce low resistivity films and high transparency to visible light. In addition, the improvement of these properties also depends on the morphology, crystalline structure and deposition parameters. In this work, ZnO:Al films were produced by d.c. pulsed magnetron sputtering deposition from a ZnO ceramic target (2.0 wt% Al2O3) on glass substrates, at a temperature of 250 ºC.The crystallographic orientation of aluminum doped zinc oxide (ZnO:Al) thin films has been studied by Electron Backscatter Diffraction (EBSD) technique. EBSD coupled with Scanning Electron Microscopy (SEM) is a powerful tool for the microstructural and crystallographic characterization of a wide range of materials.The investigation by EBSD technique of such films presents some challenges since this analysis requires a flat and smooth surface. This is a necessary condition to avoid any shadow effects during the experiments performed with high tilting conditions (70º). This is also essential to ensure a good control of the three dimensional projection of the crystalline axes on the geometrical references related to the sample.Crystalline texture is described by the inverse pole figure (IPF) maps (Figure 1). Through EBSD analysis it was observed that the external surface of the film presents a strong texture on the basal plane orientation (grains highlighted in red colour). Furthermore it was possible to verify that the grain size strongly depends on the deposition time (Figure 1 (a) and (b)). The electrical and optical film properties improve with increasing of the grain size, which can be mainly, attributed to the decrease in scattering grain boundaries which leads to an increasing in carrier mobility (Figure 2).The authors kindly acknowledge the financial support from the Portuguese Foundation for Science and Technology (FCT) scientific program for the National Network of Electron Microscopy (RNME) EDE/1511/RME/2005.

scholarly journals Texture and Microtexture of Pure (6N) and Commercially Pure Aluminum after Deformation by Extrusion with Forward-Backward Rotating Die (Kobo)

2016 ◽  
Vol 61 (1) ◽  
pp. 461-468 ◽  
Author(s):  
M. Bieda ◽  
S. Boczkal ◽  
P. Koprowski ◽  
K. Sztwiertnia ◽  
K. Pieła
Keyword(s):  
Electron Microscopy ◽  
Grain Size ◽  
Electron Backscatter Diffraction ◽  
Pure Aluminum ◽  
Pure Aluminium ◽  
Commercially Pure ◽  
Transmission Electron ◽  
Electron Backscatter ◽  
Backscatter Diffraction ◽  
Crystallographic Orientations

Pure aluminium (6N) and commercially pure aluminium (99.7) was deformed by KOBO method. Microstructure and texture of both materials after deformation was analyzed by means of scanning and transmission electron microscopy. Advanced methods of crystallographic orientations measurements like Electron Backscatter Diffraction - EBSD (SEM) and microdiffraction (TEM) was used. Grain size distribution and misorientation between grains in cross and longitudinal sections of the samples were analyzed. Differences in size and homogeneity of the grains were observed in both materials. Pure aluminium was characterized by larger grain size in both sections of extruded material. Whereas commercially pure aluminium reveals smaller grain size and more homogeneous and stable microstructure.

scholarly journals Grain size dependent photoresponsivity in GaAs films formed on glass with Ge seed layers

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
T. Nishida ◽  
K. Igura ◽  
T. Imajo ◽  
T. Suemasu ◽  
K. Toko
Keyword(s):  
Electron Microscopy ◽  
Grain Size ◽  
Electron Backscatter Diffraction ◽  
Gaas Film ◽  
Size Dependent ◽  
Transmission Electron ◽  
Wide Range ◽  
Gaas Films ◽  
Backscatter Diffraction ◽  
Seed Layers

AbstractThe strong correlation between grain size and photoresponsivity in polycrystalline GaAs films on glass was experimentally demonstrated using Ge seed layers with a wide range of grain sizes (1‒330 μm). The crystal evaluations using Raman spectroscopy, scanning electron microscopy, electron backscatter diffraction, and transmission electron microscopy revealed that 500-nm-thick GaAs films epitaxially grown from the Ge seed layers at 550 °C inherited the grain boundaries and crystal orientations in Ge. With increasing grain size, the photoresponsivity corresponding to GaAs increased from 0.01 to 3 A W−1 under a bias voltage of 0.3 V. The maximum value approached that of the GaAs film formed simultaneously on a single-crystal Ge wafer, indicating the high potential of the large-grained GaAs film. Knowledge gained from this study will be essential for designing advanced solar cells based on polycrystalline III–V compound semiconductors using inexpensive substrates.

Characterization of Nanostructured Electrodeposited NiCo Samples by use of Electron Backscatter Diffraction (EBSD)

2005 ◽  
Vol 880 ◽  
Author(s):  
Alice Bastos ◽  
Dierk Raabe ◽  
Stefan Zaefferer ◽  
Christopher Schuh
Keyword(s):  
Grain Size ◽  
Cross Sections ◽  
Electron Backscatter Diffraction ◽  
Growth Direction ◽  
Grain Structure ◽  
Local Texture ◽  
Average Grain Size ◽  
Electron Backscatter ◽  
Backscatter Diffraction

AbstractA Cobalt-20wt.% Nickel polycrystal produced by electrodeposition has been investigated in planar and cross sections using a high resolution scanning electron microscope. The local texture, grain size, amount of phase and grain boundaries, were characterized by Electron Backscatter Diffraction (EBSD). The average grain size perpendicular to the grain growth direction was 400 nm. Parallel to it, a pronounced bimodal grain structure was observed with grains reaching more than 10 μm and grains of approximately 800 nm diameter.

Electron Backscatter Diffraction. Characterization of Polyphase Materials

1999 ◽  
Vol 5 (S2) ◽  
pp. 262-263
Author(s):  
A. Medevielle ◽  
I. Hugon ◽  
O. Dugne
Keyword(s):  
Electron Microscopy ◽  
Electron Diffraction ◽  
Electron Backscatter Diffraction ◽  
Hardness Measurement ◽  
Polished Surface ◽  
Electron Backscatter ◽  
Backscatter Diffraction ◽  
Scanning Electron ◽  
High Absorption

Electron diffraction was observed in 1928 by Kikuchi. In electron diffraction, diagrams characteristic of the crystal lattice and the phase orientation are formed. Consequently, Venable, then Dingley recently developed electronic diffraction coupled with scanning electron microscopy. Their approach enables micrometric scale examination of a specimen obtained by simple metallographical preparation (polished surface). Since the 1980’s, this technique has benefited from strong technological and computerized development which have led to the sale of the first systems under the name of Electron Backscatter Diffraction (EBSD). Niobium is used in the cast industry of uranium to refine it (getter function). The strong affinity of niobium for carbon leads indeed to the formation of small precipitates of niobium carbides. Whereas carbon cannot be detected by EDS because of its high absorption by the niobium (absorption coefficient μ=29000), hardness measurement indicates the presence of carbides (HV30 = 2000), but without further information on the nature of those carbides.

Where are the geometrically necessary dislocations accommodating small imprints?

2009 ◽  
Vol 24 (3) ◽  
pp. 647-651 ◽  
Author(s):  
M. Rester ◽  
C. Motz ◽  
R. Pippan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Twin Boundary ◽  
Crystal Orientation ◽  
Electron Backscatter Diffraction ◽  
Transmission Electron ◽  
Electron Backscatter ◽  
Copper Single Crystals ◽  
Backscatter Diffraction ◽  
Small Misorientation

Electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) analyses of small indentations in copper single crystals exhibit only slight changes of the crystal orientation in the surroundings of the imprints. Far-reaching dislocations might be the reason for these small misorientation changes. Using EBSD and TEM technique, this work makes an attempt to visualize the far-propagating dislocations by introducing a twin boundary in the vicinity of small indentations. Because dislocations piled up at the twin boundary produce a misorientation gradient, the otherwise far-propagating dislocations can be detected.

scholarly journals On the Use of EBSD and Microhardness to Study the Microstructure Properties of Tungsten Samples Prepared by Selective Laser Melting

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1215
Author(s):  
Mirza Atif Abbas ◽  
Yan Anru ◽  
Zhi Yong Wang
Keyword(s):  
Selective Laser Melting ◽  
Electron Backscatter Diffraction ◽  
Fusion Reactors ◽  
Laser Melting ◽  
Kikuchi Pattern ◽  
Plasma Facing Components ◽  
Electron Backscatter ◽  
Ebsd Technique ◽  
Temperature Exposure ◽  
Backscatter Diffraction

Additively manufactured tungsten and its alloys have been widely used for plasma facing components (PFCs) in future nuclear fusion reactors. Under the fusion process, PFCs experience a high-temperature exposure, which will ultimately affect the microstructural features, keeping in mind the importance of microstructures. In this study, microhardness and electron backscatter diffraction (EBSD) techniques were used to study the specimens. Vickers hardness method was used to study tungsten under different parameters. EBSD technique was used to study the microstructure and Kikuchi pattern of samples under different orientations. We mainly focused on selective laser melting (SLM) parameters and the effects of these parameters on the results of different techniques used to study the behavior of samples.

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