A novel approach for the fabrication of low-stress bimorph RF-MEMS switches

2017 ◽  
Vol 13 (1) ◽  
pp. 116-121
Author(s):  
Hitesh Kumar Sharma ◽  
Shalu Rani
Keyword(s):  
Low Temperature ◽  
Insertion Loss ◽  
Rf Mems ◽  
Low Cost ◽  
Chemical Vapor ◽  
Process Conditions ◽  
Temperature Plasma ◽  
Content Type ◽  
Mems Switches ◽  
Novel Approach

Purpose The purpose of this paper is to design a low-cost stress bimorph RF-MEMS switch which is the desired transmission area application. Design/methodology/approach The bimorph structure of the low-temperature plasma-enhanced chemical vapor deposition (PECVD) of thermal oxide and gold are utilized to create the vibrating membrane. The effects of process conditions of low-temperature oxide deposited using the PECVD technique enable stress-free deposition of the key structural layer. Findings Scanning electron microscope images of the RF micro-switch confirms negligible stress in the released structure. The RF performances of this device exhibit isolation around 43 dB of up to 50 GHz in the OFF-state position and an insertion loss of less than 0.18 dB in the ON-state. Originality/value The finite element method results show good isolation of 43 dB and less insertion loss of 0.18 dB.

Photodefinable Metal Oxide Dielectrics: A Novel Method for Fabricating Low Cost RF Capacitive MEMS Switches

2003 ◽  
Vol 783 ◽  
Author(s):  
Guoan Wang ◽  
Augustin Jeyakumar ◽  
John Papapolymerou ◽  
Clifford L. Henderson
Keyword(s):  
Dielectric Constant ◽  
Metal Oxide ◽  
Rf Mems ◽  
High Dielectric Constant ◽  
Low Cost ◽  
Organic Precursor ◽  
Mems Switches ◽  
Novel Approach ◽  
Capacitive Mems ◽  
High Dielectric

ABSTRACTIn this paper, a novel approach for fabricating low cost capacitive RF MEMS switches using directly photodefinable high dielectric constant metal oxides has been developed. In this approach, a radiation sensitive metal-organic precursor is deposited via spin coating and converted patternwise to a high dielectric constant metal oxide via ultraviolet exposure. The feasibility of this approach is demonstrated by fabricating bridge-type and cantilever-type switches with a nitride/metal-oxide/nitride dielectric film stack. These switches exhibited significantly higher isolation and load capacitances as compared to comparable switches fabricated using a simple silicon nitride dielectric.

Wafer Level Micropackaging for RF MEMS Switches

2005 ◽  
Author(s):  
David I. Forehand ◽  
Charles L. Goldsmith
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
Low Cost ◽  
Wafer Level ◽  
Testing Methods ◽  
Mems Switches ◽  
Wafer Level Packaging ◽  
Rf Mems Switches ◽  
And Performance ◽  
Packaging Technique

Wafer-level micro-encapsulation is an innovative, low-cost, wafer-level packaging method for encapsulating RF MEMS switches. This zero-level packaging technique has demonstrated 0.04 dB package added insertion loss at 35 GHz. This article overviews the processes, measurements, and testing methods used for determining the integrity and performance of individual encapsulated RF MEMS packages.

Precursor design and engineering for low-temperature deposition of gate dielectrics for thin film transistors

2011 ◽  
Vol 1287 ◽  
Author(s):  
Anupama Mallikarjunan ◽  
Laura M Matz ◽  
Andrew D Johnson ◽  
Raymond N Vrtis ◽  
Manchao Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Moisture Absorption ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Silicon Oxycarbide ◽  
Process Conditions ◽  
Structure Property ◽  
Oh Groups

ABSTRACTThe electrical and physical quality of gate and passivation dielectrics significantly impacts the device performance of thin film transistors (TFTs). The passivation dielectric also needs to act as a barrier to protect the TFT device. As low temperature TFT processing becomes a requirement for novel applications and plastic substrates, there is a need for materials innovation that enables high quality plasma enhanced chemical vapor deposition (PECVD) gate dielectric deposition. In this context, this paper discusses structure-property relationships and strategies for precursor development in silicon nitride, silicon oxycarbide (SiOC) and silicon oxide films. Experiments with passivation SiOC films demonstrate the benefit of a superior precursor (LkB-500) and standard process optimization to enable lower temperature depositions. For gate SiO2 deposition (that are used with polysilicon TFTs for example), organosilicon precursors containing different types and amounts of Si, C, O and H bonding were experimentally compared to the industry standard TEOS (tetraethoxysilane) at different process conditions and temperatures. Major differences were identified in film quality especially wet etch rate or WER (correlating to film density) and dielectric constant (k) values (correlating to moisture absorption). Gate quality SiO2 films can be deposited by choosing precursors that can minimize residual Si-OH groups and enable higher density stable moisture-free films. For e.g., the optimized precursor AP-LTO® 770 is clearly better than TEOS for low temperature PECVD depositions based on density, WER, k charge density (measured by flatband voltage or Vfb); and leakage and breakdown voltage (Vbd) measurements. The design and development of such novel precursors is a key factor to successfully enable manufacturing of advanced low temperature processed devices.

scholarly journals Recent Developments of Reflectarray Antennas for Reconfigurable Beams Using Surface-Mounted RF-MEMS

2012 ◽  
Vol 2012 ◽  
pp. 1-12 ◽  
Author(s):  
Eduardo Carrasco ◽  
Mariano Barba ◽  
Manuel Arrebola ◽  
Jose A. Encinar
Keyword(s):  
Phase Shifter ◽  
Rf Mems ◽  
Low Cost ◽  
Phase Control ◽  
Electronic Control ◽  
Delay Lines ◽  
Mems Switches ◽  
Manufacturing Complexity ◽  
Recent Developments ◽  
Control Devices

Some of the most recent developments in reconfigurable reflectarrays using surface-mounted RF-MEMS, which have been developed at the Universidad Politécnica de Madrid, are summarized in this paper. The results include reconfigurable elements based on patches aperture-coupled to delay lines in two configurations: single elements and gathered elements which form subarrays with common phase control. The former include traditional aperture-coupled elements and a novel wideband reflectarray element which has been designed using two stacked patches. The latter are proposed as a low cost solution for reducing the number of electronic control devices as well as the manufacturing complexity of large reflectarrays. The main advantages and drawbacks of the grouping are evaluated in both pencil and shaped-beam antennas. In all the cases, the effects of the MEMS switches and their assembly circuitry are evaluated when they are used in a 2-bit phase shifter which can be extended to more bits, demonstrating that the proposed elements can be used efficiently in reconfigurable-beam reflectarrays.

scholarly journals Performance Comparison Of Shunt Rf Mems Switches

2021 ◽  
Vol 12 (5) ◽  
pp. 596-606
Author(s):  
S Girish Gandhi, I Govardhani, M Venkata Narayana, K Sarat Kumar
Keyword(s):  
Comparative Study ◽  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Switching Time ◽  
Performance Comparison ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches ◽  
And Performance

This is an attempt to compare three different shunt configured RF MEMS switches which offers a choice for applications in satellite and antennas. Advanced RF communication domain demands for design and modeling of RF MEMS switch which provides extremely reduced pull-in voltage, better isolation, low insertion loss, and with greater reliability. The proposed work manages with comparison of design modeling and performance of three different shunt configured RF MEMS switches. The proposed shunt configured RF MEMS switches are designed with different dimensions with different meandering techniques with perforations on beam structure helps in reducing the amount of voltage required for actuation of switch which is known as pull-in voltage. Comparative study of three different RF MEMS switches which involves in conducting electromechanical analysis are carried out using COMSOL multi physics tool and electromagnetic analysis are carried out using HFSS tool. Moreover the comparative study involves in comparing the values of pull-in voltage, switching time and capacitance, stress, insertion loss, return loss and isolation of three different RF MEMS switches. Proposed first switch model derives pull-in voltage of 16.9v with the switching time of 1.2µs, isolation of 47.70 dB at 5GHz and insertion loss of 0.0865 dB and return loss of 41.55 dB. Proposed second switch model derives pull-in voltage of 18.5v with the switching time of 2.5µs, isolation of 37.20 dB at 8GHz and insertion loss of 0.1177 dB and return loss of 38.60 dB. Proposed third switch model delivers pull-in voltage of 18.75v with the switching time of 2.56µs, isolation of 44.1552 dB at 8GHz and insertion loss of 0.0985 dB and return loss of 42.1004 dB.

Role of brand equity and competitive strategies in the relation between horizontal alliances and its benefits

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Changju Kim ◽  
Bin Hu
Keyword(s):  
Competitive Advantage ◽  
Brand Equity ◽  
Positive Impact ◽  
Low Cost ◽  
Sustainable Growth ◽  
Competitive Strategies ◽  
Content Type ◽  
Strategic Integration ◽  
Novel Approach ◽  
Relational Outcomes

Purpose Drawing on the resource-based view, this study aims to investigate the conditions under which small- and medium-sized retailers can improve competitive benefits through the lens of brand equity and strategies for competitive advantage in retail buying groups. Design/methodology/approach This study collected 241 samples from small- and medium-sized supermarket retailers who joined retail buying groups in Japan. Findings This study offers two key findings. First, the results indicate that a buying group’s brand equity partially mediates the relationship between member retailers’ strategic integration and their buying group benefits. Second, member retailers with a stronger differentiation orientation strengthen the positive impact of strategic integration on the buying group’s brand equity and buying group benefits. The moderating effects of low-cost orientation were not found to be significant. Practical implications To highlight the sustainable growth of small- and medium-sized retailers in retail buying groups, which are often ignored in the extant literature, this study offers practical guidance on the importance of a buying group’s brand equity. In addition, based on the findings, this paper postulates that member retailers pursuing differentiation orientation, rather than low-cost orientation, are more beneficial to retail buying groups in terms of relational outcomes and performance consequences. Originality/value By conceptualizing brand equity in retail buying groups, this study suggests a novel approach for retail management that investigates how a buying group’s brand equity is linked to strategic integration, strategies for competitive advantage and buying group benefits from the viewpoint of member retailers.

Scope of RF MEMS Technology for Microwave Circuits and Systems

2021 ◽  
pp. 1-22
Author(s):  
Kanthamani Sundharajan
Keyword(s):  
Rf Mems ◽  
Low Cost ◽  
Microwave Circuits ◽  
Micro Electro Mechanical Systems ◽  
Mems Switches ◽  
Phased Array Antennas ◽  
Array Antennas ◽  
Rf Mems Switches ◽  
Mems Technology ◽  
Key Issues

Micro-electro mechanical systems (MEMS) technology has facilitated the need for innovative approaches in the design and development of miniaturized, effective, low-cost radio frequency (RF) microwave circuits and systems. This technology is expected to have significant role in today's 5G applications for the development of reconfigurable architectures. This chapter presents an overview of the evolution of MEMS-based subsystems and devices, especially switches and phased array antennas. This chapter also discusses the key issues in design and analysis of RF MEMS-based devices, particularly with primary emphasis on RF MEMS switches and antennas.

Electrical Characterization of Low Temperature PECVD Oxides for TSV Applications

2018 ◽  
Vol 2018 (1) ◽  
pp. 000728-000733
Author(s):  
Piotr Mackowiak ◽  
Rachid Abdallah ◽  
Martin Wilke ◽  
Jash Patel ◽  
Huma Ashraf ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Charge Densities ◽  
Doped Silicon

Abstract In the present work we investigate the quality of low temperature Plasma Enhanced Chemical Vapor Deposition (PECVD) and plasma treated Tetraethyl orthosilicate (TEOS)-based TSV-liner films. Different designs of Trough Silicon Via (TSV) Test structures with 10μm and 20μm width and a depth of 100μm have been fabricated. Two differently doped silicon substrates have been used – highly p-doped and moderately doped. The results for break-through, resistivity and capacitance for the 20μm structures show a better performance compared to the 10μm structures. This is mainly due to increased liner thickness in the reduced aspect ratio case. Lower interface traps and oxide charge densities have been observed in the C-V measurements results for the 10μm structures.

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