Photodefinable Metal Oxide Dielectrics: A Novel Method for Fabricating Low Cost RF Capacitive MEMS Switches

2003 ◽  
Vol 783 ◽  
Author(s):  
Guoan Wang ◽  
Augustin Jeyakumar ◽  
John Papapolymerou ◽  
Clifford L. Henderson
Keyword(s):  
Dielectric Constant ◽  
Metal Oxide ◽  
Rf Mems ◽  
High Dielectric Constant ◽  
Low Cost ◽  
Organic Precursor ◽  
Mems Switches ◽  
Novel Approach ◽  
Capacitive Mems ◽  
High Dielectric

ABSTRACTIn this paper, a novel approach for fabricating low cost capacitive RF MEMS switches using directly photodefinable high dielectric constant metal oxides has been developed. In this approach, a radiation sensitive metal-organic precursor is deposited via spin coating and converted patternwise to a high dielectric constant metal oxide via ultraviolet exposure. The feasibility of this approach is demonstrated by fabricating bridge-type and cantilever-type switches with a nitride/metal-oxide/nitride dielectric film stack. These switches exhibited significantly higher isolation and load capacitances as compared to comparable switches fabricated using a simple silicon nitride dielectric.

scholarly journals STRUCTURAL AND ELECTRICAL PROPERTIES OF TANTALUM PENTAOXIDE (Ta2O5) THIN FILMS – A REVIEW

2013 ◽  
Vol 22 ◽  
pp. 564-569
Author(s):  
KANTA RATHEE ◽  
B. P. MALIK
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Metal Oxide ◽  
High Dielectric Constant ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Structural And Electrical Properties ◽  
High Dielectric ◽  
Deposited Films

Down scaling of complementary metal oxide semiconductor transistors has put limitations on silicon dioxide to be used as an effective dielectric. It is necessary to replace the SiO 2 with a physically thicker layer of oxides of high dielectric constant. Thus high k dielectrics are used to suppress the existing challenges for CMOS scaling. Many new oxides are being evaluated as gate dielectrics such as Ta2O5 , HfO2 , ZrO2 , La2O3 , HfO2 , TiO2 , Al2O3 , Y2O3 etc but it was soon found that these oxides in many respects have inferior electronic properties to SiO2 . But the the choice alone of suitable metal oxide with high dielectric constant is not sufficient to overcome the scaling challenges. The various deposition techniques and the conditions under which the thin films are deposited plays important role in deciding the structural and electrical properties of the deposited films. This paper discusses in brief the various deposition conditions which are employed to improve the structural and electrical properties of the deposited films.

Flexible and low cost lead free composites with high dielectric constant

2017 ◽  
Vol 43 (4) ◽  
pp. 3923-3926 ◽  
Author(s):  
Muhammad Nauman Khan ◽  
Nadeem Jelani ◽  
Chunchun Li ◽  
Jibran Khaliq
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Low Cost ◽  
Lead Free ◽  
High Dielectric

A Low-Cost Chemical Route for High Dielectric Constant Plate-Shaped Nanocrystalline CaCu3Ti4O12

2012 ◽  
Vol 16 (1) ◽  
pp. 79-83 ◽  
Author(s):  
Ranjit Kumar ◽  
M. Zulfequar ◽  
V. N. Singh ◽  
Sukhvir Singh ◽  
T. D. Senguttuvan
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Low Cost ◽  
Chemical Route ◽  
High Dielectric

High performance dielectric composites by latex compounding of graphene oxide-encapsulated carbon nanosphere hybrids with XNBR

2014 ◽  
Vol 2 (29) ◽  
pp. 11144-11154 ◽  
Author(s):  
Ming Tian ◽  
Qin Ma ◽  
Xiaolin Li ◽  
Liqun Zhang ◽  
Toshio Nishi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Graphene Oxide ◽  
Elastic Modulus ◽  
High Performance ◽  
High Dielectric Constant ◽  
Low Cost ◽  
Low Dielectric ◽  
Low Elastic Modulus ◽  
High Dielectric ◽  
Latex Compounding

A novel dielectric composite with high dielectric constant (k), low dielectric loss, low elastic modulus and large actuated strain at a low electric field was prepared by a simple, low-cost and efficient method.

Photodefinable Metal Oxide Dielectrics II: Direct Fabrication of Patterned High-k Dielectrics for Low Cost RF Capacitive MEMS Switches

2004 ◽  
Vol 833 ◽  
Author(s):  
Michael Romeo ◽  
Isaac Finger ◽  
Augustin Jeyakumar ◽  
Guoan Wang ◽  
John Papapolymerou ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxides ◽  
Oxygen Plasma ◽  
Rf Mems ◽  
Dielectric Breakdown ◽  
Low Cost ◽  
Dielectric Constants ◽  
Mems Switches ◽  
Rf Mems Switches ◽  
Metal Organic

ABSTRACTIn this paper, recent advancements related to a novel approach for fabricating low cost capacitive radio frequency microelectromechanical (RF MEMS) switches using directly photodefinable high dielectric constant metal oxides are discussed. In this approach, a radiation sensitive metal-organic precursor is deposited via spin coating and converted patternwise to a metal oxide using exposure to ultraviolet light. The feasibility of this approach has previously been demonstrated by fabricating bridge-type and cantilever-type RF MEMS switches. These early experiments showed that the photopatterned oxides displayed dielectric breakdown strengths that were insufficient for reliable operation of MEMS switches which required actuation voltages on the order of 20 V to 30 V. Recent work has focused on developing advanced processes based on the photodefinable metal-organic approach that can produce oxides with higher dielectric breakdown strengths and higher dielectric constants. A variety of post-patterning processes, including thermal baking and oxygen plasma annealing, were investigated and the impact of such processing on the resulting dielectric properties are discussed in this paper. It is shown that a combination of thermal annealing and oxygen plasma treatment can substantially improve the dielectric breakdown strength of the metal oxides produced using the photosensitive metal-organic process.

scholarly journals High dielectric constant of (1-x)(Na0.5Bi0.5)TiO3-xBaTiO3 prepared by the hydrothermal method

2019 ◽  
Vol 8 (3) ◽  
pp. 213-219
Author(s):  
Mohammed Mesrar ◽  
Tajdine Lamcharfi ◽  
Nor-Said Echatoui ◽  
Farid Abdi ◽  
Ahmed Harrach
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Low Cost ◽  
Low Frequency ◽  
Treatment Temperature ◽  
Synthesis Conditions ◽  
Heating Treatment ◽  
Alkaline Conditions ◽  
Preparation Route ◽  
High Dielectric

In this study, hydrothermal synthesis conditions for the formation of (1-x (Na0.5Bi0.5)TiO3-xBaTiO3  (x=0; 0.03; 0.05; 0.06; 0.07; 0.08 and 0.1)  compounds were investigated. The process parameters such as the alkaline conditions and heating treatment (temperature, time) as well the influence of the (Na, Bi)/Ba ratio were investigated in detail. The as-prepared NBT powders were characterized by X-ray powder diffraction, scanning electron microscope (SEM) and dielectric measurements. Taking into account NBT behavior draws consideration to phenomena of the ion ordering, coexistence of various phase regions in a crystal lattice, phase transition diffusion and a considerably new phenomenon: the existence of a very high dielectric constant at low frequency. Our result presents a simple preparation route for low-cost and high-purity.

ChemInform Abstract: Deposition, Annealing and Characterization of High-Dielectric Constant Metal Oxide Films.

ChemInform ◽  
2010 ◽  
Vol 26 (41) ◽  
pp. no-no
Author(s):  
H. TREICHEL ◽  
A. MITWALSKY ◽  
G. TEMPEL ◽  
G. ZORN ◽  
D. A. BOHLING ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Oxide ◽  
High Dielectric Constant ◽  
Oxide Films ◽  
Metal Oxide Films ◽  
High Dielectric
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