Hemispherical grained Si formation on in-situ phosphorus doped amorphous-Si electrode for 256 Mb DRAM's capacitor

AbstractIn situ electron microscopy has been used to observe crystal nucleation and growth in amorphous Si films. Results demonstrate that a repeated intermediate temperature ion irradiation/thermal annealing cycle can lead to suppression of nucleation in amorphous regions without inhibition of crystal growth of existing large crystals. Fundamentally, the experimental results indicate that the population of small crystal clusters near the critical cluster size is affected by intermediate temperature ion irradiation. Potential applications of the intermediate temperature irradiation/thermal anneal cycle to lateral solid epitaxy of Si and thin film device technology are discussed.

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Large-area bifacial n-TOPCon solar cells with in situ phosphorus-doped LPCVD poly-Si passivating contacts

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2021.111544 ◽

2022 ◽

Vol 236 ◽

pp. 111544

Author(s):

Meriç Fırat ◽

Hariharsudan Sivaramakrishnan Radhakrishnan ◽

María Recamán Payo ◽

Patrick Choulat ◽

Hussein Badran ◽

...

Keyword(s):

Solar Cells ◽

Large Area ◽

Phosphorus Doped

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Phosphorus‐Doped Iron Nitride Nanoparticles Encapsulated by Nitrogen‐Doped Carbon Nanosheets on Iron Foam In Situ Derived from Saccharomycetes Cerevisiae for Electrocatalytic Overall Water Splitting

Small ◽

10.1002/smll.202001980 ◽

2020 ◽

Vol 16 (32) ◽

pp. 2001980 ◽

Cited By ~ 1

Author(s):

Guixiang Li ◽

Jiayuan Yu ◽

Wanqiang Yu ◽

Linjing Yang ◽

Xiaoli Zhang ◽

...

Keyword(s):

Water Splitting ◽

Iron Nitride ◽

Carbon Nanosheets ◽

Nitrogen Doped ◽

Overall Water Splitting ◽

Nitrogen Doped Carbon ◽

Phosphorus Doped

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Role of conductive binder to direct solid–electrolyte interphase formation over silicon anodes

Physical Chemistry Chemical Physics ◽

10.1039/c9cp02610j ◽

2019 ◽

Vol 21 (31) ◽

pp. 17356-17365 ◽

Cited By ~ 5

Author(s):

Katie L. Browning ◽

James F. Browning ◽

Mathieu Doucet ◽

Norifumi L. Yamada ◽

Gao Liu ◽

...

Keyword(s):

Solid Electrolyte ◽

Solid Electrolyte Interphase ◽

State Of Charge ◽

Neutron Reflectometry ◽

Polymeric Binder ◽

Silicon Anodes ◽

Amorphous Si ◽

Direct Solid

With the use of in situ neutron reflectometry (NR) we show how the addition of an electronically conductive polymeric binder, PEFM, mediates the solid–electrolyte interphase (SEI) formation and composition on an amorphous Si (a-Si) electrode as a function of the state-of-charge.

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In-situ phosphorus doped ultra-high vacuum e-beam evaporated silicon for high gauge factor polysilicon

2018 IEEE Micro Electro Mechanical Systems (MEMS) ◽

10.1109/memsys.2018.8346737 ◽

2018 ◽

Author(s):

Ian Chuang ◽

Aron Michael ◽

Anastasia Soeriyadi ◽

Chee Yee Kwok

Keyword(s):

High Vacuum ◽

Ultra High Vacuum ◽

Gauge Factor ◽

Phosphorus Doped

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Laser Pulse Triggering of the Explosive Crystallization in Amorphous Si and Ge Thin Films

MRS Proceedings ◽

10.1557/proc-157-449 ◽

1989 ◽

Vol 157 ◽

Cited By ~ 2

Author(s):

W. Marine ◽

J. Marfaing

Keyword(s):

Thin Films ◽

Melting Point ◽

Laser Pulse ◽

Pulse Length ◽

Electronic Microscopy ◽

Explosive Crystallization ◽

Amorphous Si ◽

Laser Pulse Length ◽

Electronic Microscope

ABSTRACTThe structure and morphologies of the thin amorphous a-Si and oc-Ge films crystallized “in situ” in an electronic microscope by pulsed YAG laser have been studied using conventional and high-resolution transmission electronic microscopy observations. It is found that the laser induced nucleation rate (I) is laser pulse length dependent. I is about 1021-1022 cm−3 s−1 (α-Si) and 1023-1025 cm−3 s−1 (α-Ge) near the melting point. Explosive dendritic formation is the result of competition between solid state light induced nucleation and melting mediated explosive growth.

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