High-speed amorphous silicon germanium infrared sensors prepared on crystalline silicon substrates

AbstractWe have performed voltage-pulse stimulated capacitance transient measurements along with other junction capacitance measurements on a-Si:H/ a-Si,Ge:H heterostructures deposited on p-type crystalline silicon using the glow discharge technique. For a filling pulse that puts the c-Si/a-Si:H junction in forward bias, the capacitance transients consist of two components- a fast component corresponding to electron emission and a slow component corresponding to hole emission. For a fixed starting reverse bias, we have found that the density of trapped holes is proportional to the product of the filling pulse voltage and the filling pulse width and reaches a saturation value at a certain value of the product. These hole traps appear to reside at or very close to the a-Si:H/a-Si,Ge:H interface. The estimated trap concentration is around 1011/cm2 and is independent of temperature and applied bias, ruling out the creation of the traps during the filling pulse. We also report results on samples in which a-Si:H/ a-Si,Ge:H interface has been modified during growth to alter the concentration of the hole traps.

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Performance analysis and development of high-speed p-i-n infrared sensors prepared on crystalline silicon substrates

10.1117/12.427074 ◽

2001 ◽

Cited By ~ 1

Author(s):

Chin-Ying Chen ◽

Jyh-Jier Ho ◽

Yuen Keun Fang ◽

Shih-Fang Chen

Keyword(s):

Performance Analysis ◽

High Speed ◽

Crystalline Silicon ◽

Silicon Substrates ◽

Infrared Sensors

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Metastable Defects in the Amorphous Silicon-Germanium Alloys

MRS Proceedings ◽

10.1557/proc-762-a2.1 ◽

2003 ◽

Vol 762 ◽

Cited By ~ 1

Author(s):

J. David Cohen

Keyword(s):

Amorphous Silicon ◽

Silicon Germanium ◽

Dangling Bonds ◽

Annealing Behavior ◽

Fundamental Properties ◽

Silicon Materials ◽

Salient Features ◽

The Individual ◽

Amorphous Silicon Germanium ◽

Silicon Germanium Alloys

AbstractThis paper first briefly reviews a few of the early studies that established some of the salient features of light-induced degradation in a-Si,Ge:H. In particular, I discuss the fact that both Si and Ge metastable dangling bonds are involved. I then review some of the recent studies carried out by members of my laboratory concerning the details of degradation in the low Ge fraction alloys utilizing the modulated photocurrent method to monitor the individual changes in the Si and Ge deep defects. By relating the metastable creation and annealing behavior of these two types of defects, new insights into the fundamental properties of metastable defects have been obtained for amorphous silicon materials in general. I will conclude with a brief discussion of the microscopic mechanisms that may be responsible.

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Fabrication of high quality, low bandgap amorphous Silicon & amorphous Silicon Germanium alloy solar cell by Chemical Annealing

10.31274/etd-180810-942 ◽

2011 ◽

Cited By ~ 1

Author(s):

Ashutosh Shyam

Keyword(s):

Solar Cell ◽

Amorphous Silicon ◽

Silicon Germanium ◽

High Quality ◽

Low Bandgap ◽

Chemical Annealing ◽

Germanium Alloy ◽

Amorphous Silicon Germanium

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Properties of Catalytic-Cvd Amorphous Silicon-Germanium (a-SiGe:H)

MRS Proceedings ◽

10.1557/proc-192-499 ◽

1990 ◽

Vol 192 ◽

Cited By ~ 1

Author(s):

Hideki Matsumura ◽

Masaaki Yamaguchi ◽

Kazuo Morigaki

Keyword(s):

Amorphous Silicon ◽

Silicon Germanium ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Characteristic Energy ◽

Optical Band Gaps ◽

Spin Resonance ◽

Amorphous Silicon Germanium ◽

Conductive Properties ◽

Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-germanium (a-SiGe:H) films are prepared by the catalytic chemical vapor deposition (Cat-CVD) method using a SiH4, GeH4 and H4 gas mixture. Properties of the films are investigated by the photo-thermal deflection spectroscopy (PDS) and electron spin resonance (ESR) measurements, in addition to the photo-conductive and structural studies. It is found that the characteristic energy of Urbach tail, ESR spin density and other photo-conductive properties of Cat-CVD a-SiGe:H films with optical band gaps around 1.45 eV are almost equivalent to those of the device quality glow discharge hydrogenated amorphous silicon (a-Si:H).

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