Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs

2001 ◽  
Vol 22 (11) ◽  
pp. 504-506 ◽  
Author(s):  
V. Tilak ◽  
B. Green ◽  
V. Kaper ◽  
H. Kim ◽  
T. Prunty ◽  
...  
Keyword(s):  
High Power ◽  
Barrier Thickness ◽  
Power Performance ◽  
Gan Hemts

scholarly journals High power, high PAE Q-band sub-10 nm barrier thickness AlN/GaN HEMTs

2017 ◽  
Vol 214 (8) ◽  
pp. 1600797 ◽  
Author(s):  
Ezgi Dogmus ◽  
Riad Kabouche ◽  
Astrid Linge ◽  
Etienne Okada ◽  
Malek Zegaoui ◽  
...  
Keyword(s):  
High Power ◽  
Barrier Thickness ◽  
Gan Hemts

scholarly journals Figures of merit in high-frequency and high-power GaN HEMTs

2009 ◽  
Vol 193 ◽  
pp. 012040 ◽  
Author(s):  
F A Marino ◽  
N Faralli ◽  
D K Ferry ◽  
S M Goodnick ◽  
M Saraniti
Keyword(s):  
High Power ◽  
High Frequency ◽  
Figures Of Merit ◽  
Gan Hemts

AlGaN/GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS

2008 ◽  
Vol 18 (04) ◽  
pp. 913-922 ◽  
Author(s):  
SIDDHARTH RAJAN ◽  
UMESH K. MISHRA ◽  
TOMÁS PALACIOS
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Digital Circuits ◽  
Field Effect Transistors ◽  
Rf Power ◽  
Power Performance ◽  
Future Directions ◽  
Recent Developments ◽  
Gan Hemts ◽  
State Of Art

This paper provides an overview of recent work and future directions in Gallium Nitride transistor research. We discuss the present status of Ga -polar AlGaN / GaN HEMTs and the innovations that have led to record RF power performance. We describe the development of N -polar AlGaN / GaN HEMTs with microwave power performance comparable with state-of-art Ga -polar AlGaN / GaN HEMTs. Finally we will discuss how GaN -based field effect transistors could be promising for a less obvious application: low-power high-speed digital circuits.

High power AlGaN/GaN HEMTs for microwave applications

1997 ◽  
Vol 41 (10) ◽  
pp. 1569-1574 ◽  
Author(s):  
Y.-F. Wu ◽  
B.P. Keller ◽  
S. Keller ◽  
D. Kapolnek ◽  
P. Kozodoy ◽  
...  
Keyword(s):  
High Power ◽  
Microwave Applications ◽  
Gan Hemts
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