scholarly journals Integrate-and-Fire Neuron Circuit With Synaptic Off-Current Blocking Operation

IEEE Access ◽  
2021 ◽  
Vol 9 ◽  
pp. 127841-127851
Author(s):  
Seunghwan Song ◽  
Bosung Jeon ◽  
Sungmin Hwang ◽  
Myung-Hyun Baek ◽  
Jong-Ho Lee ◽  
...  
2014 ◽  
Vol 14 (6) ◽  
pp. 755-759 ◽  
Author(s):  
Min-Woo Kwon ◽  
Hyungjin Kim ◽  
Jungjin Park ◽  
Byung-Gook Park

2018 ◽  
Vol 124 (15) ◽  
pp. 152107 ◽  
Author(s):  
Min-Woo Kwon ◽  
Myung-Hyun Baek ◽  
Sungmin Hwang ◽  
Kyungchul Park ◽  
Tejin Jang ◽  
...  

2021 ◽  
Vol 15 ◽  
Author(s):  
Young-Soo Park ◽  
Sola Woo ◽  
Doohyeok Lim ◽  
Kyoungah Cho ◽  
Sangsig Kim

In this study, we propose an integrate-and-fire (I&F) neuron circuit using a p-n-p-n diode that utilizes a latch-up phenomenon and investigate the I&F operation without external bias voltages using mixed-mode technology computer-aided design (TCAD) simulations. The neuron circuit composed of one p-n-p-n diode, three MOSFETs, and a capacitor operates with no external bias lines, and its I&F operation has an energy consumption of 0.59 fJ with an energy efficiency of 96.3% per spike. The presented neuron circuit is superior in terms of structural simplicity, number of external bias lines, and energy efficiency in comparison with that constructed with only MOSFETs. Moreover, the neuron circuit exhibits the features of controlling the firing frequency through the amplitude and time width of the synaptic pulse despite of the reduced number of the components and no external bias lines.


Author(s):  
Min-Woo Kwon ◽  
Hyungjin Kim ◽  
Jungjin Park ◽  
Rajeev Ranjan ◽  
Jong-Ho Lee ◽  
...  

2016 ◽  
Vol 10 ◽  
Author(s):  
Vladimir Kornijcuk ◽  
Hyungkwang Lim ◽  
Jun Yeong Seok ◽  
Guhyun Kim ◽  
Seong Keun Kim ◽  
...  

2021 ◽  
Author(s):  
Hossein Eslahi ◽  
Tara Hamilton ◽  
Sourabh Khandelwal

In this paper, we present a mixed-signal integrate and fire neuron designed in a 22-nm FDSOI technology. In this novel design, we deploy the back-gate terminal of FDSOI technology for a tunable design. For the first time, we show analytically and with pre- and post-layout simulations a neuron with tunable spiking frequency using the back-gate voltage of FDSOI technology. The neuron circuit is designed in the sub-threshold region and dissipates an ultra-low energy per spike of the order of Femto Joules per spike. With the layout area of only 30um^2, this is the smallest neuron circuit reported to date.


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