Capacitor-less Leaky Integrate and Fire Neuron Circuit Using Positive Feedback Field Effect Transistor for Low Energy Consumption

Induced-charge electroosmosis (ICEO) phenomena have been attracting considerable attention as a means for pumping and mixing in microfluidic systems with the advantage of simple structures and low-energy consumption.

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Implementation and Characterization of an Integrate-and-Fire Neuron Circuit Using a Silicon Nanowire Feedback Field-Effect Transistor

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.2995785 ◽

2020 ◽

Vol 67 (7) ◽

pp. 2995-3000 ◽

Cited By ~ 1

Author(s):

Sola Woo ◽

Jinsun Cho ◽

Doohyeok Lim ◽

Young-Soo Park ◽

Kyoungah Cho ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Neuron Circuit ◽

Integrate And Fire ◽

Effect Transistor ◽

Integrate And Fire Neuron

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Investigation of capacitor-less integrate and fire neuron by using dual-gate a PN-body tied silicon on insulator field-effect transistor

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/abe3d5 ◽

2021 ◽

Vol 60 (SB) ◽

pp. SBBA04

Author(s):

Takayuki Mori ◽

Jiro Ida

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Integrate And Fire ◽

Dual Gate ◽

Effect Transistor ◽

Integrate And Fire Neuron

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Dual gate positive feedback field-effect transistor for low power analog circuit

2017 Silicon Nanoelectronics Workshop (SNW) ◽

10.23919/snw.2017.8242324 ◽

2017 ◽

Author(s):

Min-Woo Kwon ◽

Sungmin Hwang ◽

Myung-Hyun Baek ◽

Seongjae Cho ◽

Byung-Gook Park

Keyword(s):

Low Power ◽

Positive Feedback ◽

Field Effect ◽

Field Effect Transistor ◽

Analog Circuit ◽

Dual Gate ◽

Effect Transistor

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Organic Field‐Effect Transistors: Challenges and Emerging Opportunities in High‐Mobility and Low‐Energy‐Consumption Organic Field‐Effect Transistors (Adv. Energy Mater. 29/2020)

Advanced Energy Materials ◽

10.1002/aenm.202070126 ◽

2020 ◽

Vol 10 (29) ◽

pp. 2070126

Author(s):

Cong Wang ◽

Xiaotao Zhang ◽

Huanli Dong ◽

Xiaodong Chen ◽

Wenping Hu

Keyword(s):

Energy Consumption ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Low Energy ◽

Organic Field Effect Transistors ◽

Low Energy Consumption ◽

Energy Mater

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Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi2Ta2O9)/Semiconductor Field Effect Transistor (MFSFET)

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.2289 ◽

1999 ◽

Vol 38 (Part 1, No. 4B) ◽

pp. 2289-2293 ◽

Cited By ~ 6

Author(s):

Sung-Min Yoon ◽

Eisuke Tokumitsu ◽

Hiroshi Ishiwara

Keyword(s):

Adaptive Learning ◽

Field Effect ◽

Field Effect Transistor ◽

Neuron Circuit ◽

Learning Function ◽

Effect Transistor

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Integrate-and-Fire of Input Spike Signals with High Scalability and Low Energy Consumption Using VO2 Metal-Insulator Transition

10.7567/ssdm.2018.j-8-04 ◽

2018 ◽

Author(s):

T. Yajima ◽

T. Nishimura ◽

A. Toriumi

Keyword(s):

Energy Consumption ◽

Insulator Transition ◽

Low Energy ◽

Metal Insulator Transition ◽

Metal Insulator ◽

Integrate And Fire ◽

Low Energy Consumption ◽

High Scalability ◽

Spike Signals ◽

Input Spike

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Challenges and Emerging Opportunities in High‐Mobility and Low‐Energy‐Consumption Organic Field‐Effect Transistors

Advanced Energy Materials ◽

10.1002/aenm.202000955 ◽

2020 ◽

Vol 10 (29) ◽

pp. 2000955 ◽

Cited By ~ 2

Author(s):

Cong Wang ◽

Xiaotao Zhang ◽

Huanli Dong ◽

Xiaodong Chen ◽

Wenping Hu

Keyword(s):

Energy Consumption ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Low Energy ◽

Organic Field Effect Transistors ◽

Low Energy Consumption

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Mimicking biological neurons with a nanoscale ferroelectric transistor

Nanoscale ◽

10.1039/c8nr07135g ◽

2018 ◽

Vol 10 (46) ◽

pp. 21755-21763 ◽

Cited By ~ 57

Author(s):

Halid Mulaosmanovic ◽

Elisabetta Chicca ◽

Martin Bertele ◽

Thomas Mikolajick ◽

Stefan Slesazeck

Keyword(s):

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Integrate And Fire ◽

Fire Activity ◽

Biological Neuron ◽

Effect Transistor

The integrate-and-fire activity of a biological neuron was implemented with a nanoscale hafnium oxide-based ferroelectric field-effect transistor.

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