Performance analysis of 22 nm deep submicron NMOS transistors

2015 6th Asia Symposium on Quality Electronic Design (ASQED) ◽

10.1109/acqed.2015.7274020 ◽

2015 ◽

Author(s):

Kim Ho Yeap ◽

Jor Gie Liew ◽

Siu Hong Loh ◽

Humaira Nisar ◽

Zairi Ismael Rizman

Keyword(s):

Performance Analysis ◽

Deep Submicron ◽

Nmos Transistors

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Impact of gate-to-contact spacing on ESD performance of salicided deep submicron NMOS transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2002.803627 ◽

2002 ◽

Vol 49 (12) ◽

pp. 2183-2192 ◽

Author(s):

Kwang-Hoon Oh ◽

C. Duvvury ◽

K. Banerjee ◽

R.W. Dutton

Keyword(s):

Deep Submicron ◽

Nmos Transistors

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The impact of scaling on hot-carrier degradation and supply voltage of deep-submicron NMOS transistors

International Electron Devices Meeting 1991 [Technical Digest] ◽

10.1109/iedm.1991.235338 ◽

2002 ◽

Author(s):

P. Woerlee ◽

P. Damink ◽

M. van Dort ◽

C. Juffermans ◽

C. de Kort ◽

...

Keyword(s):

Supply Voltage ◽

Deep Submicron ◽

Hot Carrier ◽

Nmos Transistors ◽

Hot Carrier Degradation

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Investigation of gate to contact spacing effect on ESD robustness of salicided deep submicron single finger NMOS transistors

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) ◽

10.1109/relphy.2002.996628 ◽

2003 ◽

Author(s):

Kwang-Hoon Oh ◽

C. Duvvury ◽

K. Banerjee ◽

R.W. Dutton

Keyword(s):

Spacing Effect ◽

Deep Submicron ◽

Single Finger ◽

Nmos Transistors

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Electrothermal behavior of deep submicron nMOS transistors under high current snapback (ESD/EOS) conditions

Proceedings of 1994 IEEE International Electron Devices Meeting ◽

10.1109/iedm.1994.383370 ◽

2002 ◽

Author(s):

A. Amerasekera ◽

J.A. Seitchik

Keyword(s):

Deep Submicron ◽

High Current ◽

Nmos Transistors

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Non-uniform bipolar conduction in single finger NMOS transistors and implications for deep submicron ESD design

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922906 ◽

2002 ◽

Author(s):

Kwang-Hoon Oh ◽

C. Duvvury ◽

C. Salling ◽

K. Banerjee ◽

R.W. Dutton

Keyword(s):

Deep Submicron ◽

Single Finger ◽

Bipolar Conduction ◽

Nmos Transistors

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Flicker noise in deep submicron nMOS transistors

Solid-State Electronics ◽

10.1016/s0038-1101(00)00039-3 ◽

2000 ◽

Vol 44 (7) ◽

pp. 1239-1245 ◽

Author(s):

N. Lukyanchikova ◽

N. Garbar ◽

M. Petrichuk ◽

E. Simoen ◽

C. Claeys

Keyword(s):

Flicker Noise ◽

Deep Submicron ◽

Nmos Transistors

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Analysis of nonuniform ESD current distribution in deep submicron NMOS transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2002.805049 ◽

2002 ◽

Vol 49 (12) ◽

pp. 2171-2182 ◽

Author(s):

Kwang-Hoon Oh ◽

C. Duvvury ◽

K. Banerjee ◽

R.W. Dutton

Keyword(s):

Current Distribution ◽

Deep Submicron ◽

Nmos Transistors

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Impact of technology scaling on the 1∕f noise of thin and thick gate oxide deep submicron NMOS transistors

IEE Proceedings - Circuits Devices and Systems ◽

10.1049/ip-cds:20040991 ◽

2004 ◽

Vol 151 (5) ◽

pp. 415 ◽

Author(s):

K.W. Chew ◽

K.W. Chew ◽

K.S. Yeo ◽

S.-F. Chu

Keyword(s):

Deep Submicron ◽

Technology Scaling ◽

Impact Of Technology ◽

Nmos Transistors

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Performance Analysis of Communications Networks and Systems

10.1017/cbo9780511616488 ◽

2006 ◽

Author(s):

Piet Van Mieghem

Keyword(s):

Performance Analysis ◽

Communications Networks

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Human Performance Analysis Tool (HPAT)

PsycEXTRA Dataset ◽

10.1037/e564862012-056 ◽

2009 ◽

Author(s):

Milt Stretton

Keyword(s):

Performance Analysis ◽

Human Performance ◽

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