Electrothermal behavior of deep submicron nMOS transistors under high current snapback (ESD/EOS) conditions

Author(s):  
A. Amerasekera ◽  
J.A. Seitchik
2002 ◽  
Vol 49 (12) ◽  
pp. 2183-2192 ◽  
Author(s):  
Kwang-Hoon Oh ◽  
C. Duvvury ◽  
K. Banerjee ◽  
R.W. Dutton

Author(s):  
Kim Ho Yeap ◽  
Jor Gie Liew ◽  
Siu Hong Loh ◽  
Humaira Nisar ◽  
Zairi Ismael Rizman

2000 ◽  
Vol 44 (7) ◽  
pp. 1239-1245 ◽  
Author(s):  
N. Lukyanchikova ◽  
N. Garbar ◽  
M. Petrichuk ◽  
E. Simoen ◽  
C. Claeys

2002 ◽  
Vol 49 (12) ◽  
pp. 2171-2182 ◽  
Author(s):  
Kwang-Hoon Oh ◽  
C. Duvvury ◽  
K. Banerjee ◽  
R.W. Dutton

Author(s):  
R. Hutchings ◽  
I.P. Jones ◽  
M.H. Loretto ◽  
R.E. Smallman

There is increasing interest in X-ray microanalysis of thin specimens and the present paper attempts to define some of the factors which govern the spatial resolution of this type of microanalysis. One of these factors is the spreading of the electron probe as it is transmitted through the specimen. There will always be some beam-spreading with small electron probes, because of the inevitable beam divergence associated with small, high current probes; a lower limit to the spatial resolution is thus 2αst where 2αs is the beam divergence and t the specimen thickness.In addition there will of course be beam spreading caused by elastic and inelastic interaction between the electron beam and the specimen. The angle through which electrons are scattered by the various scattering processes can vary from zero to 180° and it is clearly a very complex calculation to determine the effective size of the beam as it propagates through the specimen.


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