A physics-based compact gallium nitride power semiconductor device model for advanced power electronics design

2017 ◽  
Author(s):  
Ramchandra M. Kotecha ◽  
Yuzhi Zhang ◽  
Arman Rashid ◽  
Nan Zhu ◽  
Tom Vrotsos ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Power Electronics ◽  
Semiconductor Device ◽  
Power Semiconductor Device ◽  
Power Semiconductor ◽  
Device Model ◽  
Electronics Design

scholarly journals Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design

2021 ◽  
Vol 2 ◽  
pp. 75-87
Author(s):  
Ramchandra M. Kotecha ◽  
Md Maksudul Hossain ◽  
Arman Ur Rashid ◽  
Asif Imran Emon ◽  
Yuzhi Zhang ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Power Electronics ◽  
High Voltage ◽  
Semiconductor Devices ◽  
Compact Modeling ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Electronics Design

Clustered insulated gate bipolar transistor: a new power semiconductor device

2001 ◽  
Vol 148 (2) ◽  
pp. 75 ◽  
Author(s):  
M. Sweet ◽  
O. Spulber ◽  
J.V. Subhas Chandra Bose ◽  
L. Ngwendson ◽  
K.V. Vershinin ◽  
...  
Keyword(s):  
Semiconductor Device ◽  
Bipolar Transistor ◽  
Power Semiconductor Device ◽  
Power Semiconductor ◽  
Insulated Gate Bipolar Transistor
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